F1516 [POLYFET]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管
| 型号： | F1516 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
F1516
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
16Watts Single Ended
Package Style AP
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
and high F enhance broadband
t
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Case Thermal
Resistance
Temperature
o
o
o
o
40 Watts
4.2
3.2 A
70 V
70V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS (
16WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
11
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Power Gai
Drain Efficiency
Idq = 0.8 A, Vds = 28.0V, F = 500 MHz
Idq = 0.8 A, Vds = 28.0V, F = 500 MHz
55
%
h
VSWR
Load Mismatch Toleranc
20:1
Relative Idq = 0.8 A, Vds = 28.0V, F = 500 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.04 A,
Vds = 28.0 V, Vgs = 0V
Drain Breakdown Voltag
Zero Bias Drain Curren
Vgs = 0V
0.8
1
mA
uA
Igss
Gate Leakage Curren
Vds = 0 V,
Vgs = 30V
Vgs = Vds
Vgs
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
1
7
Ids =0.08 A,
V
Mho
Ohm
Amp
pF
gM
0.8
1
Vds = 10V, Vgs = 5V
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 4A
Saturation Curren
4.8
36
4
Vgs = 20V, Vds = 10V
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
pF
Coss
24
pF
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1516
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1516 POUT VS PIN F=500MHZ; IDQ=0.8A; VDS=28.0V
F2A 4 DIE CAPACITANCE
25
20
15
10
5
17
16
15
14
13
12
11
10
9
100
Ciss
POUT
GAIN
Coss
10
Crss
0
8
0
0.5
1
1.5
2
2.5
3
1
PIN IN WATTS
0
5
10
15
20
25
30
POUT
GAIN
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F2A 4 DIE IV CURVE
F2A 4 DIE GM & ID vs VGS
6
5
4
3
2
1
0
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
0
2
4
6
8
10
12
14
16
18
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
VGS = 10V
VGS 12V
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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