TIP140 [POINN]
NPN SILICON POWER DARLINGTONS; NPN硅功率DARLINGTONS
| 型号： | TIP140 |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON POWER DARLINGTONS |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
DECEMBER 1971 - REVISED MARCH 1997
●
Designed for Complementary Use with
TIP145, TIP146 and TIP147
SOT-93 PACKAGE
(TOP VIEW)
●
●
●
125 W at 25°C Case Temperature
10 A Continuous Collector Current
B
C
E
1
2
3
Minimum h of 1000 at 4 V, 5 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIP140
TIP141
TIP142
TIP140
TIP141
TIP142
60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
80
V
100
60
VCEO
80
V
100
Emitter-base voltage
VEBO
IC
ICM
IB
5
10
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
15
A
0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Ptot
Ptot
125
W
W
mJ
°C
°C
°C
3.5
2
½LIC
100
Operating junction temperature range
Tj
Tstg
TL
-65 to +150
-65 to +150
260
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIP140
TIP141
TIP142
TIP140
TIP141
TIP142
TIP140
TIP141
TIP142
60
80
Collector-emitter
V(BR)CEO
IC
=
30 mA
IB = 0
B = 0
V
breakdown voltage
(see Note 5)
100
VCE
VCE
VCE
VCB
VCB
=
=
=
=
=
30 V
40 V
50 V
60 V
80 V
I
2
2
2
1
1
1
Collector-emitter
cut-off current
ICEO
IB = 0
IB = 0
mA
I
E = 0
Collector cut-off
current
ICBO
IE = 0
IE = 0
mA
mA
VCB = 100 V
Emitter cut-off
current
IEBO
hFE
VCE(sat)
VBE
VEB
=
5 V
IC = 0
2
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
VCE
VCE
=
=
4 V
4 V
IC
IC = 10 A
IC 5 A
=
5 A
1000
500
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
IB
IB
=
=
10 mA
40 mA
=
2
3
V
V
V
IC = 10 A
VCE
IE
=
4 V
IC = 10 A
3
Parallel diode
forward voltage
VEC
=
10 A
IB = 0
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = 40 mA
RL = 3 W
MIN
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 10 A
I
IB(off) = -40 mA
0.9
11
µs
µs
VBE(off) = -4.2 V
tp = 20 µs, dc £ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS140AB
TCS140AA
70000
10000
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
1·5
1·0
0·5
1000
TC = -40°C
TC = 25°C
VCE
=
4 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
0
0·5
0·5
1·0
10
20
1·0
10 20
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AC
3·0
2·5
2·0
1·5
1·0
0·5
0
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS140AA
100
10
1·0
0·1
TIP140
TIP141
TIP142
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
1,37
1,17
15,2
14,7
4,1
4,0
ø
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
1,10
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAW
NOTE A: The centre pin is in electrical contact with the mounting tab.
P R O D U C T
I N F O R M A T I O N
5
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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