概述
数据手册BU406 概述
NPN SILICON POWER TRANSISTORS NPN硅功率晶体管
BU406 数据手册
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PDF下载BU406, BU407
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
●
●
●
7 A Continuous Collector Current
15 A Peak Collector Current
TO-220 PACKAGE
(TOP VIEW)
60 W at 25°C Case Temperature
1
2
3
B
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BU406
BU407
BU406
BU407
BU406
BU407
400
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
VCBO
V
330
400
VCEX
VCEO
V
V
330
200
150
Emitter-base voltage
VEB
IC
6
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
7
ICM
IB
15
4
A
A
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Ptot
Tj
60
W
°C
°C
-55 to +150
-55 to +150
Storage temperature range
Tstg
NOTE 1: This value applies for tp £ 10 ms, duty cycle £ 2%.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
V(BR)CEO
IC
=
30 mA
IB = 0
BE = 0
140
V
breakdown voltage
V
CE = 400 V
V
BU406
BU407
BU406
BU407
BU406
BU407
5
5
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
Collector-emitter
cut-off current
0.1
0.1
1
ICES
mA
mA
T
C = 150°C
TC = 150°C
1
Emitter cut-off
current
IEBO
hFE
VCE(sat)
VBE(sat)
VEB
=
6 V
IC = 0
1
Forward current
transfer ratio
VCE
VCE
=
=
10 V
10 V
IC
=
4 A
12
20
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
IC = 0.5 A
Collector-emitter
saturation voltage
Base-emitter
IB
IB
=
=
0.5 A
0.5 A
IC
IC
=
=
5 A
5 A
1
V
V
1.2
saturation voltage
Current gain
ft
VCE
VCB
=
=
5 V
IC = 0.5 A
IE = 0
f = 1 MHz
f = 1 MHz
(see Note 4)
6
MHz
pF
bandwidth product
Output capacitance
Cob
20 V
60
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
2.08
70
°C/W
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
†
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ts
Storage time
Turn off time
2.7
µs
ns
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
t(off)
750
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
V
BB+
V
= 24V
cc
5.6
W
47
W
22
W
7.5
W
SET
mH
240
100
W
I
B
BY205
TIP32
100
W
TIP32
Current
Probes
+4V
50
W
OUTPUT
BY205
5 pF
INPUT
0
2N5337
1 k
W
mH
14.8
TUT
2N6191
TIP31
TIP31
TIP31
22
W
22 W
V
BB-
Figure 1. Inductive-Load Switching Test Circuit
s
m
64
s
m
42
I
B(end)
I
50%
0
B
t
s
I
C
0.1 A
0
t
off
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
voltage VCE has risen 3 V into
its flyback excursion.
V
fly
V
CE
3 V
0
Figure 2. Inductive-Load Switching Waveforms
P R O D U C T
I N F O R M A T I O N
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCD124AA
TCD124AB
70
60
50
40
30
20
10
0
50
40
30
20
10
0
TC = 25°C
tp < 300 µs
< 2%
VCE = 5 V
tp < 300 µs
d < 2%
d
TC = 100°C
TC = 25°C
VCE
VCE
=
=
1 V
5 V
TC = -55°C
VCE = 10 V
0·1
1·0
10
0·1
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
d < 2%
0·7
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
0·2
0·1
0
IB = 0.5 A
-60 -40 -20
0
20 40 60 80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAD124AA
10
1·0
0·1
BU407
BU406
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
P R O D U C T
I N F O R M A T I O N
5
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
6
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
7
BU406 相关器件
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| BU406-A-T3P-T | STMICROELECTRONICS | SILICON NPN SWITCHING TRANSISTOR | 获取价格 |
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| BU406-A-T3P-T | UTC | SILICON NPN SWITCHING TRANSISTOR | 获取价格 |
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| BU406-A-TA3-T | STMICROELECTRONICS | SILICON NPN SWITCHING TRANSISTOR | 获取价格 |
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| BU406-A-TA3-T | UTC | SILICON NPN SWITCHING TRANSISTOR | 获取价格 |
|
| BU406-A-TF3-T | STMICROELECTRONICS | SILICON NPN SWITCHING TRANSISTOR | 获取价格 |
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| BU406-A-TF3-T | UTC | Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | 获取价格 |
|
| BU406-B-T3P-T | UTC | Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN | 获取价格 |
|
| BU406-B-TA3-T | UTC | Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | 获取价格 |
|
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