7EL2 [POINN]
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 双向晶闸管过电压保护
| 型号： | 7EL2 |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总8页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
Copyright © 1999, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
CELL PACKAGE
(SIDE VIEW)
Low Voltage Overshoot under Surge
T(A)
V
V
V
(BO)
(BR)
(BO)
DEVICE
MINIMUM MINIMUM MAXIMUM
V
V
V
7EL2
±245
±265
±400
R(B)
MD4XACA
●
Rated for International Surge Wave Shapes
device symbol
ITU-T K28
(10/700)
GR-974-CORE
(10/1000)
T
DEVICE
I
I
TSP
TSP
A
A
7EL2
±400
±300
●
●
Gas Discharge Tube (GDT) Replacement
SD4XAA
R
Planar Passivated Junctions in a Protected
Cell Construction
Low Off-State Current
Terminals T and R correspond to the
alternative line designators of A and B
Extended Service Life
●
Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 7EL2 must be installed in a housing which
maintains a stable microclimate during these tests.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides. The 7EL2 is guaranteed to voltage limit and withstand the listed
international lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 7EL2’s copper electrodes is specially shaped to promote a progressive
shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 7EL2 in compression,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 7EL2 will fail short circuit, providing maximum protection to the equipment.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
T = 25°C (unless otherwise noted)
absolute maximum ratings,
A
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
5/310 µs (ITU-T K28, 10/700 µs voltage wave shape)
10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Note 1)
full sine wave, 50/60 Hz, 1 s
-20°C to 65°C
-20°C to 65°C
400
300
I
A
TSP
-40°C to 65°C
I
10
A rms
°C
TSM
Junction temperature
T
-40 to +150
-40 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium.
2. Most PTT’s quote an unloaded voltage waveform. In operation the 7EL2 essentially shorts the generator output. The resulting
loaded current waveform is specified.
electrical characteristics for the T and R terminals, T = 25°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
= ±20 mA, (see Note 3)
(BR)
MIN
-40°C to 65°C ±245
+15°C to 25°C ±265
-40°C to 65°C
TYP
MAX
UNIT
V
V
Breakdown Voltage
I
V
(BR)
Breakover voltage
dv/dt = ±0.2 V/s,
R
> 200 Ω
V
V
(BO)
SOURCE
±400
±400
Impulse breakover
voltage
100 V/µs ≤ dv/dt ≤ ±1000 V/µs,
di/dt ≤ 10 A/µs
V
-40°C to 65°C
(BO)
Sources are 52.5 V O.C., 260 mA S.C. and
135 V O.C., 200 mA S.C.
Impulse reset
-40°C to 65°C
20
ms
on-state current 25 A, 10/1000 µs impulse
V
V
= ±50 V (see Note 4)
= ±200 V
-40°C to 65°C
-40°C to 65°C
-40°C to 65°C
±0.5
±10
200
D
D
I
Off-state current
µA
pF
D
C
Off-state capacitance
f = 1 MHz, V = 1 Vrms, V = 0,
d D
off
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7)
4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment
P R O D U C T
I N F O R M A T I O N
2
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
V(BO)
V(BR)
I(BR)
VD
ID
+v
-v
VD
ID
I(BR)
V(BR)
V(BO)
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAG
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
P R O D U C T
I N F O R M A T I O N
3
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
TYPICAL CHARACTERISTICS
NORMALISED BREAKDOWN VOLTAGE (V(BR)
)
OFF-STATE CURRENT
vs
vs
JUNCTION TEMPERATURE
TC4VAH
JUNCTION TEMPERATURE
TCVAG
1.15
1.10
1.05
1.00
0.95
100
10
I(BR) = ±20 mA
VD = ±200 V
1
VD = ±50 V
0·1
0·01
0·001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED HOLDING CURRENT
vs
NORMALISED BREAKOVER VOLTAGE (V(BO)
vs
)
JUNCTION TEMPERATURE
TC4VAK
TC4VAJ
JUNCTION TEMPERATURE
1.5
1.05
1.00
0.95
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
T- Junction Temperature - °C
Figure 4.
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
TYPICAL CHARACTERISTICS
OFF-STATE CAPACITANCE
OFF-STATE CAPACITANCE
vs
vs
TERMINAL VOLTAGE
TC4VAM
JUNCTION TEMPERATURE
TC4VAL
200
200
VD = 0
VD Positive
100
90
100
90
80
70
80
VD = +50 V
VD = - 50 V
70
60
60
50
VD Negative
50
40
40
Vd = 1 Vrms, f = 1 MHz
Vd = 1 Vrms, f = 1 MHz, TA = 25 °C
10
30
30
-40
0·1
1
100
-20
0
20
40
60
80
VD - DC Off-State Voltage - V
TJ - Junction Temperature - °C
Figure 6.
Figure 7.
CUMULATIVE POPULATION
vs
10/1000 CURRENT CAPABILITY TC4VAN
99
98
95
90
80
70
60
50
40
30
20
10
5
2
1
0.5
= TA
+65 °C +25 °C -5 °C -20 °C
370 380 390 400 410 420 430 440 450 460 470
I - Peak Current Capability - A
Figure 8.
P R O D U C T
I N F O R M A T I O N
5
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
RATING AND THERMAL INFORMATION
MAXIMUM NON-RECURRING 60 Hz CURRENT
vs
CURRENT DURATION
TI4VAA
100
10
1
TA = 65 °C
VGEN = 600 Vrms
Ω
RGEN = 10 to 200
0·1
1
10
100
1000
t - Current Duration - s
Figure 9.
P R O D U C T
I N F O R M A T I O N
6
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
MECHANICAL DATA
cell package
BUTTON CELL 7EL2
0,508 (0.020)
MAX
Top Electrode
Sleeve
2,45 (0.096)
2,16 (0.085)
Bidirectional
Silicon Chip
0,178 (0.007)
MAX
Bottom Electrode
2,67 (0.105)
2,16 (0.085)
φ
6,10 (0.240)
MAX
φ
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES
MD4XAO
P R O D U C T
I N F O R M A T I O N
7
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
8
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