MMBTRC108SS [PJSEMI]
NPN Digital Transistor;型号: | MMBTRC108SS |
厂家: | PJSEMI |
描述: | NPN Digital Transistor |
文件: | 总3页 (文件大小:2781K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBTRC107SS~MMBTRC109SS
NPN Digital Transistor
Features
• With built-in bias resistors
SOT-23
(TO-236)
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Collector
(Output)
1.Base 2.Emitter 3.Collector
R1
Base
(Input)
R2
Emitter
(Common)
Resistor Values
R2 (KΩ)
7BR
Type
R1 (KΩ)
R2 (KΩ)
MMBTRC107SS
MMBTRC108SS
MMBTRC109SS
10
22
47
47
47
22
8BR
9BR
Absolute Maximum Ratings (T = 25 ℃)
a
Unit
Value
Parameter
Symbol
Output Voltage
VO
50
30, -6
40, -7
40, -15
100
V
MMBTRC107SS
Input Voltage
VI
V
MMBTRC108SS
MMBTRC109SS
Output Current
IO
mA
Total Power Dissipation
Ptot
200
mW
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TStg
- 55 to + 150
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Revision:1.0 Jan-2018
MMBTRC107SS~MMBTRC109SS
NPN Digital Transistor
Characteristics at T = 25 ℃
a
Typ.
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VO = 5 V, IO = 10 mA
MMBTRC107SS
MMBTRC108SS
MMBTRC109SS
80
80
70
-
-
-
-
-
-
-
-
-
GI
Output Cutoff Current
at VO = 50 V
IO(OFF)
-
-
500
nA
mA
V
Input Current
at VI = 5 V
MMBTRC107SS
MMBTRC108SS
MMBTRC109SS
-
-
-
-
-
-
0.88
0.36
0.16
II
Output Voltage
at IO = 10 mA, II = 0.5 mA
VO(ON)
-
-
0.3
Input Voltage (ON)
at VO = 0.2 V, IO = 5 mA
MMBTRC107SS
MMBTRC108SS
MMBTRC109SS
-
-
-
-
-
-
1.8
2.6
5.8
VI(ON)
V
Input Voltage (OFF)
at VO = 5 V, IO = 0.1 mA
MMBTRC107SS
MMBTRC108SS
MMBTRC109SS
0.5
0.6
1.5
-
-
-
-
-
-
VI(OFF)
V
Transition Frequency
at VO = 10 V, IO = 5 mA
fT
-
200
-
MHz
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Revision:1.0 Jan-2018
MMBTRC107SS~MMBTRC109SS
NPN Digital Transistor
Package Outline
SOT-23(TO-236)
Dimensions in mm
0.8
Dimensions in millimeter
Symbol
Min.
Typ.
1.025
0.050
Max.
1.150
0.100
0.900
A
0.8
A1
0.000
b
c
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
D
E
1.200
2.250
1.800
1.300
2.400
1.400
2.550
2.000
H
E
1.9
1.900
e
L1
L
0.550REF
SOT-23 (TO-236)
0.300
0.500
Recommended soldering pad
o
o
0
8
θ
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Revison:1.0 Jan-2018
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