D20N10E [PINGWEI]
20 Amps, 95Volts N-CHANNEL Power MOSFET;
| 型号： | D20N10E |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 20 Amps, 95Volts N-CHANNEL Power MOSFET |
| 文件： | 总6页 (文件大小：472K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D20N10E
20 Amps, 95Volts N-CHANNEL Power MOSFET
DFN5*6
FEATURE
20A,95V,RDS(ON)MAX=7m
VGS=10V/5A
Ω
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
The D20N10E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The D20N10E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
UNIT
D20N10E
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
ID
95
±20
20
V
Continuous Drain Current
A
Pulsed Drain Current(Note1)
IDM
80
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
EAS
20
mJ
A
IAS
20
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
dv/dt
TJ,TSTG
TCH
5.5
V/ns
℃
-55 to +150
150
℃
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
TL
260
℃
Thermal Characteristics
Parameter
MAX
2.7
Symbol
Rth(ch-c)
Rth(ch-a)
PD
Units
℃/W
℃/W
W
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
55
Maximum Power Dissipation
TC=25℃
38
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
/ΔTJ
VGS=0V,ID=250uA
95
－
－
－
V
Reference to 25℃，
ID=250uA
0.06
V/
℃
－
Zero Gate Voltage Drain Current
IDSS
VDS=90VGS=0V
－
－
－
－
－
－
1
5
μA
μA
nA
IDSS
VDS=90VGS=0V（TJ =55℃）
VGS=±20VDS=0V
Gate-Body Leakage Current,Forward
On Characteristics
IGSS
±100
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=5A
2.0
4.0
7
V
－
5.2
m
Ω
－
Ciss
Coss
Crss
VDS=50V,VGS=0V,
f=1.0MHZ
－
－
－
2020
450
－
－
－
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
260
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
V DD =50V,I D =1A,
25
18.5
58
ns
ns
－
－
－
－
－
－
－
－
－
－
－
－
－
－
R G =6.8Ω,V GS =10V
R L =25Ω,
(Note4,5)
ns
75
ns
Qg
Qgs
Qgd
VDS=50V,ID=6A,
50
nC
nC
nC
VGS=10V, (Note4,5)
13
11
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
IS
VG = VD= 0V, Force Current
IS=1A,VGS=0V
－
－
－
－
－
－
20
80
A
A
V
ISM
VSD
1.0
Notes
1.
2.
3.
4.
Repetitive Rating:pulse width limited by maximum junction temperature.
VDD=25V,L=0.1mH,R =25 ,I =20A , starling T =25
.
℃
Ω
g
AS
J
ISD I ,dI/dt=200A/us,V
BV ,starting T =25
Pulse width≤300us;duty cycle≤2%.
≤
≤ ℃，
D
DD
DSS
J
Repetitive rating; pulse width limited by maximum junction temperature.
RATINGAND CHARACTERISTIC CURVES
RATINGAND CHARACTERISTIC CURVES
48
12
10
VGS=10V,9V,8V,7V,6V
ID =12A
36
8
6
4
2
0
5V
24
4V
12
3V
0
8
16
20
4
12
0
0
10
20
30
40
50
60
VDS,Drain-to-Source Voltage(V)
Qg ,Total Gate Charge(nC)
100
10000
1000
100
Ciss
TJ =150℃
TJ =25℃
10
1
Coss
Crss
10
VGS =0V
F= 1MHz
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS,Source-Drain Voltage(V)
24
0
32
40
8
16
48
VDS,Drain-to-Source Voltage(V)
140
130
3
2.5
120
110
100
80
2
1.5
1
VGS=10V
0.5
0
70
-60 -40 -20
0 25 50 75100 125 150175
-75 -50 -25
0 25 50 75 100125 150175
TJ , Junction Temperature(℃)
TJ , Junction Temperature(℃)
100
Operation in this Area
Limited by RDS(on)
Common Source
Tc=25℃
IDM=Limited
100
10
Pulse Test
10
1ms
1
10ms
DC
Limited by RDS(on)
VGS =10V
0.1
0.01
TC=25℃
TJ=150℃
Single Pulse
BVDSS Limited
10
1
0.1
1
10
100
0.1
1
100
ID, Drain Current(A)
VDS,Drain-to-Source Voltage(V)
25
20
15
10
5
5
4
3
2
1
0
Common Source
VDS=10V
ID=250uA
Pulse Test
0
25
50
75
100
125
150
-80
-40
0
40
80
120 140
TCH , Channel Temperature(Initial) (℃)
TC, Case Temperature(℃)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Time(s)
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