8N10P [PINGWEI]
8 Amps,100 Volts N-CHANNEL Power MOSFET;
| 型号： | 8N10P |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 8 Amps,100 Volts N-CHANNEL Power MOSFET |
| 文件： | 总7页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8N10P
8 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
SOP8L PIN CONFIGURATION
GENERAL DESCRIPTION
The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
UNIT
8N10P
Drain-Source Voltage
VDSS
VGSS
ID
100
V
Gate-Source Voltage
±20
Continuous Drain Current
8
A
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
IDM
32
EAS
11
15
mJ
A
IAS
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
dv/dt
TJ,TSTG
TCH
5.5
V/ns
℃
-55 to +150
150
℃
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
TL
260
℃
Thermal Characteristics
Parameter
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
16
Units
℃/W
℃/W
W
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
59
Maximum Power Dissipation
TC=25℃
3.1
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
/ΔTJ
VGS=0V,ID=250uA
100
－
－
－
－
V
Reference to 25℃，
ID=250uA
0.06
V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=100VGS=0V
－
－
－
－
1
5
μA
μA
nA
IDSS
VDS=100VGS=0V（TJ =55℃） －
Gate-Body Leakage Current,Forward
On Characteristics
IGSS
VGS=±20VDS=0V
－
±100
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=8A
1.0
－
3.0
23
V
－
18.5
mΩ
Ciss
Coss
Crss
VDS=50V,VGS=0V,
f=1.0MHZ
－
－
－
1190
95
－
－
－
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
7
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
VDD=50V,
－
－
－
－
－
－
－
7
3
－
－
－
－
－
－
－
ns
ns
R L =6.25Ω,
R GEN =3Ω
20
3
ns
VGS=10V (Note4,5)
ns
Qg
Qgs
Qgd
VDS=50V,ID=8A,
16
4.5
2.5
nC
nC
nC
VGS=10V, (Note4,5)
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
IS
VG = VD= 0V, Force Current
IS=10A,VGS=0V
－
－
－
－
－
－
8
A
A
V
ISM
VSD
32
1.0
Notes
1.
2.
3.
4.
Repetitive Rating:pulse width limited by maximum junction temperature.
VDD=25V,L=0.1mH,Rg=25Ω,IAS=13A , starling TJ=25℃.
ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
RATINGAND CHARACTERISTIC CURVES
RATINGAND CHARACTERISTIC CURVES
40
12
10
10V
4.5V
ID =8A
30
20
8
6
4
2
0
10
0
3V
2
4
5
1
3
0
0
4
8
12
16
20
14
VDS,Drain-to-Source Voltage(V)
Qg ,Total Gate Charge(nC)
100
10
1
10000
1000
100
Ciss
TJ =150℃
TJ =25℃
Coss
Crss
10
VGS =0V
F= 1MHz
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2
VDS,Source-Drain Voltage(V)
1.4
0
60
20
40
80
100 100
VDS,Drain-to-Source Voltage(V)
140
130
3
2.5
120
110
100
80
2
1.5
1
VGS=10V
0.5
0
70
-60 -40 -20
0 25 50 75 100 125 150175
-75 -50 -25
0 25 50 75 100125 150175
TJ , Junction Temperature(℃)
TJ , Junction Temperature(℃)
100
Operation in this Area
Limited by RDS(on)
Common Source
Tc=25℃
Pulse Test
IDM=Limited
100
10
10
1ms
1
10ms
Limited by RDS(on)
VGS =10V
0.1
0.01
TC=25℃
TJ=150℃
Single Pulse
BVDSS Limited
10
DC
1
0.1
1
10
100
0.1
1
100
ID, Drain Current(V)
VDS,Drain-to-Source Voltage(V)
15
12
9
5
4
3
2
1
0
6
Common Source
3
VDS=10V
ID=250uA
Pulse Test
0
25
50
75
100
125
150
-80
-40
0
40
80
120
140
TCH , Channel Temperature(Initial) (℃)
TC, Case Temperature(℃)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Time(s)
PACKAGE OUTLINE DIMENSIONS
SOP8L
SOP8L
Min
Dim
Max
A .236(6.0) .245(6.20)
B .014(0.37) .017(0.43)
C
D
E
F
H
I
——
.050(1.27)
.188(4.80) .194(4.92)
.025(0.65) .030(0.75)
.055(1.40) .060(1.50)
.149(3.80) .154(3.90)
.003(0.10) .008(0.20)
.019(0.50) .028 (0.70)
J
Dimensions in inches and (millimeters)
相关型号：
©2020 ICPDF网 联系我们和版权申明