1A7 [PINGWEI]
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER; 硅整流技术规范
| 型号： | 1A7 |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1A1 THRU 1A7
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：1.0A
FEATURES
·High reliability
R-1
·Low leakage
·Low forward voltage drop
·High current capability
.025(0.65)
.021(0.55)
.787(20.0)
MIN.
DIA.
DIA.
.138(3.5)
.114(2.9)
.102(2.6)
.087(2.2)
MECHANICAL DATA
.787(20.0)
MIN.
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
Dimensions in inches and (millimeters)
·Weight: 0.19 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1A1
1A2
1A3
1A4
1A5
1A6 1A7 units
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
100
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at TA=25°C
Io
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
25
A
V
IFSM
Maximum Instantaneous forward Voltage at 1.0A
DC
VF
1.1
5.0
@ TA=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
500
@ TA=100°C
IR
µA
Maximum Full Load Reverse Current Average
30
Full Cycle .375”(9.5mm) lead length at TL=75°C
CJ
15
60
pF
Typical Junction Capacitance (Note)
Typical Thermal Resistance
RθJA
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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