10A1 [PINGWEI]
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER; 硅整流技术规范
| 型号： | 10A1 |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
| 文件： | 总1页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
10A05 THRU 10A10
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：10.0A
FEATURES
·Low cost
R-6
·Low leakage
·Low forward voltage drop
·High current capability
·High surge current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
Dimensions in inches and (millimeters)
·Weight: 2.08 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
10A05 10A1 10A2 10A4 10A6 10A8 10A10
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward rectified Current
at TA=75°C
Io
10.0
300
1.0
A
A
V
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
VF
Maximum Instantaneous forward Voltage at10.0A
DC
10
@ TA=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
500
@ TA=100°C
IR
µA
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at TL=75°C
50
Typical Junction Capacitance (Note)
Typical Thermal Resistance
CJ
150
10
pF
RθJA
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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相关型号：
10A1-T
Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN
RECTRON
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