PSMN040-100MSE [PHILIPS]

N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications; N沟道100伏36.6米标准电平MOSFET在LFPAK33专为高功率PoE应用而设计
PSMN040-100MSE
型号: PSMN040-100MSE
厂家: NXP SEMICONDUCTORS    NXP SEMICONDUCTORS
描述:

N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications
N沟道100伏36.6米标准电平MOSFET在LFPAK33专为高功率PoE应用而设计

文件: 总13页 (文件大小:355K)
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PSMN040-100MSEX

PSMN040-100MSE - N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

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1 PHILIPS

PSMN040-200W

N-channel TrenchMOS transistor

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46 PHILIPS

PSMN040-200W

N-channel TrenchMOS transistor

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42 PHILIPS

PSMN041-80YL

25A, 80V, 0.041ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER, SOP-8, LFPAK56-4

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0 PHILIPS

PSMN041-80YLX

N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin

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0 PHILIPS

PSMN045-80YS

N-channel LFPAK 80 V 45 mΩ standard level MOSFET

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14 PHILIPS

PSMN050-80BS,118

PSMN050-80BS - N-channel 80 V 46 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin

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0 PHILIPS

PSMN050-80PS

N-channel 80 V 50 mΩ standard level MOSFET

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11 PHILIPS

PSMN057-200B

N-channel TrenchMOS transistor

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53 PHILIPS

PSMN057-200B

TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

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0 PHILIPS

PSMN057-200B,118

N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin

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0 PHILIPS

PSMN057-200B/T3

TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

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0 PHILIPS

PSMN057-200P

N-channel TrenchMOS transistor

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77 PHILIPS

PSMN057-200P

N-channel TrenchMOS SiliconMAX standard level FET

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37 PHILIPS

PSMN057-200P

TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

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1 PHILIPS