概述
规格参数
数据手册
替代型号PBSS5350Z 概述
50 V low VCEsat PNP transistor 50伏的低VCEsat晶体管PNP晶体管 双极性晶体管 功率双极晶体管
PBSS5350Z 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Transferred | 零件包装代码： | SC-73 |
| 包装说明： | PLASTIC, SC-73, 4 PIN | 针数： | 4 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.29.00.75 | 风险等级： | 5.05 |
| Is Samacsys： | N | 外壳连接： | COLLECTOR |
| 最大集电极电流 (IC)： | 3 A | 集电极-发射极最大电压： | 50 V |
| 配置： | SINGLE | 最小直流电流增益 (hFE)： | 200 |
| JESD-30 代码： | R-PDSO-G4 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 4 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | PNP | 最大功率耗散 (Abs)： | 2 W |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 30 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 100 MHz |
| Base Number Matches： | 1 |
PBSS5350Z 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
PBSS5350Z
50 V low VCEsat PNP transistor
Product specification
2003 May 13
Supersedes data of 2003 Jan 20
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
PARAMETER
MAX. UNIT
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−50
−3
V
A
A
ICM
−5
RCEsat
<150 mΩ
PINNING
PIN
APPLICATIONS
• Power management
– DC/DC converters
DESCRIPTION
1
2
3
4
base
– Supply line switching
– Battery charger
collector
emitter
collector
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
4
handbook, halfpage
– Inductive load driver, e.g. relays, buzzers, motors.
2, 4
DESCRIPTION
1
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
3
1
2
3
Top view
MAM288
MARKING
TYPE NUMBER
PBSS5350Z
MARKING CODE
Fig.1 Simplified outline (SOT223) and symbol.
PB5350
2003 May 13
2
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−60
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
−
−
−
−
−
−
−
V
open base
−50
−6
V
open collector
V
−3
A
ICM
−5
A
IBM
−1
A
Ptot
total power dissipation
T
amb ≤ 25 °C; notes 1 and 3
amb ≤ 25 °C; notes 2 and 3
1.35
2
W
W
°C
°C
°C
T
Tstg
Tj
storage temperature
−65
−
+150
150
+150
junction temperature
Tamb
operating ambient temperature
−65
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; notes 1 and 3
in free air; notes 2 and 3
92
K/W
K/W
62.5
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
2003 May 13
3
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−100
−50
UNIT
nA
ICBO
collector-base cut-off current VCB = −50 V; IE = 0
−
−
−
−
−
−
V
CB = −50 V; IE = 0; Tj = 150 °C
µA
IEBO
hFE
emitter-base cut-off current VEB = −5 V; IC = 0
−100
nA
DC current gain
VCE = −2 V;
IC = −500 mA
200
200
100
−
−
−
−
−
−
−
−
IC = −1 A; note 1
−
IC = −2 A; note 1
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −200 mA; note 1
−100
−180
−300
<150
−1.2
mV
mV
mV
mΩ
V
−
−
RCEsat
VBEsat
equivalent on-resistance
−
120
base-emitter saturation
voltage
−
−
VBEon
fT
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−
−
−
−1.1
V
transition frequency
IC = −100 mA; VCE = −5 V;
100
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
40
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 May 13
4
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
MGW167
MGW168
1000
−1.2
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(V)
800
(1)
(2)
(1)
−0.8
600
(2)
400
−0.4
(3)
(3)
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V.
(1) amb = 150 °C.
VCE = −2 V.
T
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MGW169
MGW170
3
−10
−1.4
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
V
CEsat
−1.2
(mV)
2
−1.0
−10
(1)
(1)
−0.8
(2)
(3)
(2)
−0.6
−10
−1
(3)
−0.4
−0.2
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 10.
IC/IB = 10.
(1) amb = −55 °C.
(1)
Tamb = 150 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 May 13
5
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
MGW171
MGW172
−1000
(1)
(2)
(3)
−5
handbook, halfpage
handbook, halfpage
(1) (2) (3)
(4)
(5)
(6)
(7)
I
I
C
(A)
C
(mA)
(4)
(5)
(6)
(7)
−4
−800
(8)
(9)
−3
−2
−600
−400
(10)
(8)
(9)
(10)
(11)
(12)
−1
−200
0
0
0
−0.4
−0.8
−1.2
−1.6
−2
(V)
0
−0.4
−0.8
−1.2
−1.6
−2
(V)
V
V
CE
CE
Tamb = 25 °C.
Tamb = 25 °C.
(1) IB = −250 mA.
(2) IB = −225 mA.
(3) IB = −200 mA.
(4) IB = −175 mA.
(5) IB = −150 mA.
(6) IB = −125 mA.
(7) IB = −100 mA.
(8) IB = −75 mA.
(9) IB = −50 mA.
(10) IB = −25 mA.
(1) IB = −3.96 mA.
(2) IB = −3.63 mA.
(3) IB = −3.30 mA.
(4) IB = −2.97 mA.
(5)
I
B = −2.64 mA.
(9) IB = −1.32 mA.
(6) IB = −2.31 mA.
(7) IB = −1.98 mA.
(8) IB = −1.65 mA.
(10) IB = −0.99 mA.
(11) IB = −0.66 mA.
(12) IB = −0.33 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
MGU390
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
(1)
(2)
(3)
−1
10
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
C
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 May 13
6
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
99-09-13
SOT223
SC-73
2003 May 13
7
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 May 13
8
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
NOTES
2003 May 13
9
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
NOTES
2003 May 13
10
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
NOTES
2003 May 13
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2003 May 13
Document order number: 9397 750 11058
PBSS5350Z CAD模型
引脚图
封装焊盘图
PBSS5350Z 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| FZT749 | FAIRCHILD | PNP Low Saturation Transistor | 功能相似 |
|
| FZT1151ATA | DIODES | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 功能相似 |
|
| DJT4030P-13 | DIODES | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | 功能相似 |
|
PBSS5350Z 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| PBSS5350Z,135 | NXP | PBSS5350Z - 50 V low VCEsat PNP transistor SC-73 4-Pin | 获取价格 |
|
| PBSS5350Z-Q | NEXPERIA | 50 V, 3 A PNP low VCEsat transistorProduction | 获取价格 |
|
| PBSS5350Z/T3 | NXP | 3A, 50V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN | 获取价格 |
|
| PBSS5360PAS | NEXPERIA | 60 V, 3A PNP low VCEsat transistorProduction | 获取价格 |
|
| PBSS5360PAS-Q | NEXPERIA | 60 V, 3A PNP low VCEsat transistorProduction | 获取价格 |
|
| PBSS5360X | NEXPERIA | 60 V, 3 A PNP low VCEsat (BISS) transistorProduction | 获取价格 |
|
| PBSS5360Z | NEXPERIA | 60 V, 3 A PNP low VCEsat transistorProduction | 获取价格 |
|
| PBSS5360Z-Q | NEXPERIA | 60 V, 3 A PNP low VCEsat transistorProduction | 获取价格 |
|
| PBSS5420D | NXP | 20 V, 4 A PNP low VCEsat (BISS) transistor | 获取价格 |
|
| PBSS5420D | NEXPERIA | 20 V, 4 A PNP low VCEsat (BISS) transistorProduction | 获取价格 |
|
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