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BZV85-C6V2 [NXP]

Voltage regulator diodes; 稳压二极管
BZV85-C6V2
型号： BZV85-C6V2
厂家： NXP    NXP
描述：

Voltage regulator diodes
稳压二极管

稳压二极管 齐纳二极管 测试
文件： 总8页 (文件大小：57K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BZV85 series  
Voltage regulator diodes  
1999 May 11  
Product specification  
Supersedes data of 1996 Apr 26  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZV85 series  
FEATURES  
DESCRIPTION  
• Total power dissipation:  
max. 1.3 W  
Medium-power voltage regulator diodes in hermetically sealed leaded glass  
SOD66 (DO-41) packages. The diodes are available in the normalized E24  
approx. ±5% tolerance range. The series consists of 33 types with nominal  
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).  
• Tolerance series: approx. ±5%  
• Working voltage range:  
nom. 3.6 to 75 V (E24 range)  
• Non-repetitive peak reverse power  
dissipation: max. 60 W.  
handbook, halfpage  
k
a
MAM241  
APPLICATIONS  
The diodes are type branded.  
• Stabilization purposes.  
Fig.1 Simplified outline (SOD66; DO-41) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
IF  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
500  
UNIT  
mA  
continuous forward current  
−
IZSM  
non-repetitive peak reverse current tp = 100 µs; square wave;  
see Table  
Tj = 25 °C prior to surge; see Fig.3 “Per type”  
tp = 10 ms; half sinewave;  
Tj = 25 °C prior to surge  
see Table  
“Per type”  
Ptot  
total power dissipation  
Tamb = 25 °C; lead length 10 mm;  
−
1
W
note 1  
note 2  
−
−
1.3  
60  
W
W
PZSM  
non-repetitive peak reverse power tp = 100 µs; square wave;  
dissipation  
Tj = 25 °C prior to surge  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
+200  
200  
°C  
°C  
−
Notes  
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.  
2. If the leads are kept at Ttp = 55 °C at 4 mm from body.  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
IF = 50 mA; see Fig.4  
1
V
1999 May 11  
2
Per type  
Tj = 25 °C unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
VR = 0 V  
DIODE CAP.  
Cd (pF)  
REVERSE  
CURRENT at  
REVERSE  
VOLTAGE  
NON-REPETITIVE  
PEAK REVERSE CURRENT  
IZSM  
RESISTANCE  
rdif (Ω)  
SZ (mV/K)  
at IZtest  
at IZtest  
at IZtest  
see Figs 5 and 6  
BZV85-  
CXXX  
at tp = 100 µs; at tp = 10 ms;  
IR (µA)  
VR  
(V)  
Tamb = 25 °C  
Tamb = 25 °C  
MIN. MAX.  
MAX.  
MIN.  
MAX.  
MAX.  
MAX.  
MAX. (A)  
MAX. (mA)  
3.4  
3.7  
3.8  
4.1  
15  
15  
13  
13  
10  
7
−3.5  
−3.5  
−2.7  
−2.0  
−0.5  
0
−1.0  
−1.0  
0
60  
60  
50  
45  
45  
45  
35  
35  
35  
25  
25  
25  
20  
20  
20  
15  
15  
15  
10  
10  
10  
8
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
50  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
4.0  
4.5  
5.0  
6.5  
7.0  
7.7  
8.4  
9.1  
10.5  
11.0  
12.5  
14.0  
15.5  
17  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
7.0  
7.0  
5.0  
5.0  
4.0  
4.0  
3.0  
3.0  
3.0  
2.5  
1.75  
1.75  
1.75  
1.5  
1.5  
1.2  
1.2  
2000  
1950  
1850  
1800  
1750  
1700  
1620  
1550  
1500  
1400  
1340  
1200  
1100  
1000  
900  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
10  
4.0  
4.6  
5
4.4  
5.0  
+0.7  
+2.2  
2.7  
3
4.8  
5.4  
3
5.2  
6.0  
2
5.8  
6.6  
4
0.6  
3.6  
2
6.4  
7.2  
3.5  
3
1.3  
4.3  
2
7.0  
7.9  
2.5  
5.5  
1
7.7  
8.7  
5
3.1  
6.1  
0.7  
0.7  
0.2  
0.2  
0.2  
0.2  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
8.5  
9.6  
5
3.8  
7.2  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32.0  
8
4.7  
8.5  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28.0  
10  
10  
10  
15  
15  
20  
24  
25  
30  
40  
45  
5.3  
9.3  
85  
11  
6.3  
10.8  
12.0  
13.6  
15.4  
17.1  
19.1  
22.1  
24.3  
27.5  
32.0  
85  
12  
7.4  
80  
13  
8.9  
75  
760  
15  
10.7  
11.8  
13.6  
16.6  
18.3  
20.1  
22.4  
75  
700  
16  
70  
600  
18  
60  
540  
20  
60  
500  
22  
55  
450  
24  
27  
50  
19  
400  
30  
8
50  
21  
380  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
VR = 0 V  
DIODE CAP.  
Cd (pF)  
REVERSE  
CURRENT at  
REVERSE  
VOLTAGE  
NON-REPETITIVE  
PEAK REVERSE CURRENT  
IZSM  
RESISTANCE  
rdif (Ω)  
SZ (mV/K)  
at IZtest  
at IZtest  
at IZtest  
see Figs 5 and 6  
BZV85-  
CXXX  
at tp = 100 µs; at tp = 10 ms;  
IR (µA)  
VR  
(V)  
Tamb = 25 °C  
Tamb = 25 °C  
MIN. MAX.  
MAX.  
MIN.  
MAX.  
MAX.  
MAX.  
MAX. (A)  
MAX. (mA)  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
31.0  
34.0  
37.0  
40.0  
44.0  
48.0  
52.0  
58.0  
64.0  
70.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
80.0  
45  
50  
24.8  
27.2  
29.6  
34.0  
37.4  
40.8  
46.8  
52.2  
60.5  
66.5  
35.0  
39.9  
43.0  
48.3  
52.5  
56.5  
63.0  
72.5  
81.0  
88.0  
8
8
6
6
4
4
4
4
4
4
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
23  
25  
27  
30  
33  
36  
39  
43  
48  
53  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.4  
0.35  
0.3  
350  
320  
296  
270  
246  
226  
208  
186  
171  
161  
60  
75  
100  
125  
150  
175  
200  
225  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZV85 series  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
110  
UNIT  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
lead length 4 mm; see Fig.2  
lead length10 mm; note 1  
175  
Note  
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.  
GRAPHICAL DATA  
MBG929  
3
10  
R
th j-tp  
(K/W)  
δ = 1  
2
10  
0.75  
0.50  
0.33  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
0
t
t
p
p
δ =  
T
T
1
10  
−2  
−1  
2
3
4
10  
1
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.  
1999 May 11  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZV85 series  
MBG802  
MBG925  
2
10  
300  
handbook, halfpage  
handbook, halfpage  
I
I
ZSM  
(A)  
F
(mA)  
(1)  
10  
200  
(1)  
(2)  
(2)  
1
100  
−1  
10  
0
0
2
0.5  
1.0  
1
10  
V
(V)  
10  
V
(V)  
Znom  
F
(1) tp = 10 µs; half sinewave; Tamb = 25 °C.  
(2) tp = 10 ms; half sinewave; Tamb = 25 °C.  
(1) Tj = 200 °C.  
(2) Tj = 25 °C.  
Fig.3 Non-repetitive peak reverse current as a  
function of the nominal working voltage.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
MBG800  
MBG926  
100  
10  
handbook, halfpage  
handbook, halfpage  
S
Z
(1)  
(mV/K)  
S
Z
(mV/K)  
80  
10  
(2)  
(3)  
9V1  
5
8V2  
7V5  
6V8  
60  
40  
6V2  
5V6  
5V1  
0
4V7  
4V3  
20  
0
3V6  
3V9  
−5  
2
0
25  
50  
1
10  
V
(V)  
10  
Znom  
I
(mA)  
Z
IZ = IZtest; Tj = 25 to 150 °C.  
(1) Maximum values.  
(2) Typical values.  
BZV85-C3V6 to C10.  
Tj = 25 to 150 °C.  
For types above 7.5 V the temperature coefficient is independent  
of current; see Table “Per type”.  
(3) Minimum values.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
Fig.6 Temperature coefficient as a function of  
nominal working voltage.  
1999 May 11  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZV85 series  
PACKAGE OUTLINE  
Hermetically sealed glass package; axial leaded; 2 leads  
SOD66  
(1)  
k
a
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)  
0
2
4 mm  
G
D
L
b
1
UNIT  
max.  
min.  
max.  
max.  
scale  
mm  
0.81  
2.6  
4.8  
28  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
DO-41  
EIAJ  
97-06-20  
SOD66  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 May 11  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
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Tel. +359 2 68 9211, Fax. +359 2 68 9102  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
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Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
Czech Republic: see Austria  
Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
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South America: Al. Vicente Pinzon, 173, 6th floor,  
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Tel. +55 11 821 2333, Fax. +55 11 821 2382  
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Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
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Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
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Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA64  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/02/pp8  
Date of release: 1999 May 11  
Document order number: 9397 750 05929  

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

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