概述
规格参数
数据手册BUK6215-75C 概述
N-channel TrenchMOS FET N沟道FET的TrenchMOS 功率场效应晶体管
BUK6215-75C 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 零件包装代码： | TO-252 | 包装说明： | PLASTIC, SC-63, DPAK-3 |
| 针数： | 3 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.72 |
| Is Samacsys： | N | 其他特性： | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas）： | 94 mJ | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 75 V |
| 最大漏极电流 (ID)： | 57 A | 最大漏源导通电阻： | 0.0205 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-252 |
| JESD-30 代码： | R-PSSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 175 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL |
| 最大脉冲漏极电流 (IDM)： | 229 A | 认证状态： | Not Qualified |
| 表面贴装： | YES | 端子面层： | PURE TIN |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | 30 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
BUK6215-75C 数据手册
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N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Compatable with logic and standard
level gate drive sources
1.3 Applications
12 V Automotive systems
Start-Stop micro-hybrid applications
Transmission control
Electric and electro-hydraulic power
steering
Ultra high performance power
Engine management
switching
Motors, lamps and solenoid control
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
75
57
V
A
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
128
W
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 15 A; Tj = 25 °C;
12.5 15
mΩ
on-state resistance see Figure 11
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
Table 1. Quick reference data …continued
Symbol
Parameter
Conditions
Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 57 A; Vsup ≤ 75 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
-
94
mJ
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 60 V;
-
18.8
-
nC
VGS = 10 V; see Figure 13;
see Figure 14
2. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
S
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
2
1
3
SOT428 (DPAK)
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK6215-75C
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
2 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
75
Unit
V
drain-source voltage
gate-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
[1]
[2]
VGS
DC
-16
16
V
Pulsed
-20
20
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
-
-
-
57
A
41
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
229
A
see Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; see Figure 2
-
128
175
175
W
-55
-55
°C
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
57
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
229
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
ID = 57 A; Vsup ≤ 75 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
94
-
mJ
J
avalanche energy
[3][4][5]
EDS(AL)R
repetitive drain-source
avalanche energy
[1] -16V accumulated duration not to exceed 168 hrs
[2] Accumulated pulse duration not to exceed 5mins.
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
3 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
003aae770
03aa16
120
60
I
P
D
der
(A)
(%)
80
40
20
40
0
0
0
50
100
150
200
0
50
100
150
200
T
( C)
°
mb
T
mb
(°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae764
104
I
D
(A)
103
Limit RDSon = VDS / ID
t
= 10 μs
p
102
100
s
μ
10
1
DC
10
1 ms
10 ms
100 ms
10-1
10-1
1
102
103
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
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NXP Semiconductors
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 4
-
-
1.17
K/W
003aae742
10
Zth(j-mb)
(K/W)
1
10-1
10-2
10-3
δ
= 0.5
0.2
0.1
0.05
0.02
tp
δ =
P
T
single shot
t
tp
T
tp (s)
10-6
10-5
10-4
10-3
10-2
10-1
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
5 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
75
68
1.8
-
-
V
V
V
voltage
-
-
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
2.3
2.8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
-
3.3
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
0.8
IDSS
drain leakage current
gate leakage current
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.02
2
IGSS
100
100
15
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 11
12.5
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 11
-
-
-
15.3
14.4
-
20.5
18
mΩ
mΩ
mΩ
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11; see Figure 12
39
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 60 V; VGS = 5 V;
see Figure 13; see Figure 14
-
34.8
-
nC
ID = 25 A; VDS = 60 V; VGS = 10 V;
see Figure 13; see Figure 14
-
-
-
-
-
-
-
-
-
-
-
61.8
8.7
-
-
-
nC
nC
nC
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
18.8
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
2920 3900 pF
240
159
16.6
37.4
126
69
290
pF
pF
ns
ns
ns
ns
nH
220
VDS = 55 V; RL = 2.2 Ω; VGS = 10 V;
-
-
-
-
-
RG(ext) = 10 Ω
td(off)
tf
turn-off delay time
fall time
LD
internal drain inductance
from upper edge of drain mounting
base to centre of die. ; Tj = 25 °C
3.5
LS
internal source inductance
from source lead to source bond
pad ; Tj = 25 °C
-
7.5
-
nH
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
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NXP Semiconductors
N-channel TrenchMOS FET
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
-
0.8
1.2
V
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
-
-
51
-
-
ns
Qr
117
nC
003aae760
003aae761
100
60
10.0
4.5
6.0
4.0
g
fs
(S)
I
D
(A)
80
V
(V) = 3.8
3.6
GS
40
60
40
20
0
20
3.4
3.3
3.2
0
0
20
40
60
0
0.5
1
1.5
2
I
(A)
V
(V)
D
DS
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae762
003aae763
80
20
I
R
D
DSon
(A)
(m
Ω)
18
60
16
14
12
10
40
20
T = 175
C
T = 25
C
V
°
°
j
j
0
0
2
4
6
0
4
8
12
16
20
(V)
(V)
V
GS
GS
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
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NXP Semiconductors
N-channel TrenchMOS FET
003aad805
003aad806
4
10-1
ID
(A)
10-2
VGS(th)
(V)
3
max
min
typ
max
10-3
10-4
10-5
10-6
typ
2
min
1
0
-60
0
60
120
180
0
1
2
3
4
VGS (V)
Tj (°C)
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aae766
003aad804
80
3
a
R
DSon
(mΩ)
2.5
4.0
3.4
3.6
3.8
60
40
20
0
2
1.5
1
V
(V) = 4.5
5.0
GS
0.5
0
10.0
0
30
60
90
-60
0
60
120
180
I
(A)
Tj (°C)
D
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
8 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
003aae768
10
GS
V
DS
V
(V)
I
D
8
6
4
2
0
V
GS(pl)
V
GS(th)
V
= 14V
V
= 60V
DS
DS
V
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
20
40
60
80
Q
(nC)
G
Fig 13. Gate charge waveform definitions
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aae769
003aae767
104
80
IS
(A)
C
(pF)
C
iss
60
40
103
102
10
C
C
oss
rss
T = 175
j
C
T = 25 C
°
j
°
20
0
10-1
1
10
102
0
0.3
0.6
0.9
1.2
1.5
VSD (V)
V
(V)
DS
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
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NXP Semiconductors
N-channel TrenchMOS FET
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
1
b
2
E
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 17. Package outline SOT428 (DPAK)
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
10 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
8. Revision history
Table 7.
Revision history
Document ID
BUK6215-75C v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20101004
Product data sheet
-
BUK6215-75C v.1
• Status changed from objective to product.
• Various changes to content.
BUK6215-75C v.1
20100908
Objective data sheet
-
-
BUK6215-75C
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
11 of 14
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NXP Semiconductors
N-channel TrenchMOS FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
9.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
BUK6215-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
12 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK6215-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
13 of 14
BUK6215-75C
NXP Semiconductors
N-channel TrenchMOS FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 October 2010
Document identifier: BUK6215-75C
BUK6215-75C 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BUK6215-75C,118 | NXP | BUK6215-75C - N-channel TrenchMOS FET DPAK 3-Pin | 获取价格 |
|
| BUK6218-40C | NXP | 42A, 40V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | 获取价格 |
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| BUK6226-75C | NXP | N-channel TrenchMOS FET Rev. 01 â 4 October 2010 | 获取价格 |
|
| BUK6226-75C,118 | NXP | N-channel TrenchMOS FET DPAK 3-Pin | 获取价格 |
|
| BUK6228-55C | NXP | 31A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | 获取价格 |
|
| BUK6228-55C,118 | NXP | N-channel TrenchMOS intermediate level FET DPAK 3-Pin | 获取价格 |
|
| BUK6240-75C | NXP | TRANSISTOR 22 A, 75 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power | 获取价格 |
|
| BUK6240-75C,118 | NXP | N-channel TrenchMOS FET DPAK 3-Pin | 获取价格 |
|
| BUK6246-75C | NXP | 22A, 75V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3/2 | 获取价格 |
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| BUK6246-75C,118 | NXP | N-channel TrenchMOS intermediate level FET DPAK 3-Pin | 获取价格 |
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