BTA204W-600C [NXP]
Three quadrant triacs high commutation; 三象限三端双向可控硅整流高
| 型号： | BTA204W-600C |
| 厂家： | 
NXP |
| 描述： | Three quadrant triacs high commutation |
| 文件： | 总6页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA204W- 500B 600B 800B
BTA204W- 500C 600C 800C
VDRM
Repetitive peak
off-state voltages
RMS on-state current
500
600
800
V
IT(RMS)
ITSM
1
1
10
1
10
A
A
Non-repetitive peak on-state 10
current
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
4
T2
T1
2
main terminal 2
gate
3
G
2
3
1
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
1
A
Tsp ≤ 108 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
10
11
0.5
100
A
A
t = 16.7 ms
t = 10 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A2s
A/µs
dIT/dt
ITM = 1.5 A;
IG = 0.2 A;
dIG/dt = 0.2 A/µs
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
full or half cycle
-
-
15
K/W
Rth j-a
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...B
...C
IGT
Gate trigger current2
Latching current
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
-
-
-
50
50
50
35
35
35
mA
mA
mA
T2+ G-
T2- G-
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
-
-
-
-
-
30
45
30
30
20
30
20
20
mA
mA
mA
mA
T2+ G-
T2- G-
IH
VD = 12 V; IGT = 0.1 A
VT
On-state voltage
IT = 2 A
-
-
1.2
0.7
0.4
1.5
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current
VD = VDRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
BTA204W- ...B ...C
TYP. UNIT
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 1 A;
dVcom/dt = 20V/µs; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000
1000
-
-
V/µs
A/ms
µs
6
-
3
-
2
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
Ptot / W
IT(RMS) / A
Tsp(max) / C
= 180
1.4
1.2
104
107
110
1.2
1
108 C
1
1
120
90
0.8
0.6
0.4
0.2
0
113
116
0.8
0.6
0.4
0.2
0
60
30
119
122
125
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
Tsp / C
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus solder point temperature Tsp.
,
IT(RMS) / A
ITSM / A
2
1.5
1
1000
100
10
I
TSM
time
I
T
T
Tj initial = 25 C max
dIT/dt limit
T2- G+ quadrant
0.5
0
1
10us
100us
1ms
T / s
10ms
100ms
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tsp ≤ 108˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
12
10
8
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
6
4
0.8
0.6
0.4
2
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
IGT(Tj)
IGT(25 C)
IT / A
2
1.5
1
3
2.5
2
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ G-
T2- G-
Vo = 1.0 V
Rs = 0.21 Ohms
typ
1.5
1
max
0.5
0
0.5
0
0
0.5
1
1.5
2
-50
0
50
Tj / C
100
150
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-sp (K/W)
100
10
3
2.5
2
unidirectional
bidirectional
1
1.5
1
t
P
D
p
0.1
0.01
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
2.3
6.3
1.5
min
(3x)
1.5
min
4.6
Fig.12. soldering pattern for surface mounting SOT223.
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
6.7
6.3
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.13. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
6
Rev 1.000
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