BTA204-500D [NXP]
Three quadrant triacs guaranteed commutation; 三象限三端双向可控硅保证换向
| 型号： | BTA204-500D |
| 厂家： | 
NXP |
| 描述： | Three quadrant triacs guaranteed commutation |
| 文件： | 总6页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope, intended
for use in motor control circuits or with
other highly inductive loads. These
devices balance the requirements of
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intended for interfacing with low power
drivers, including micro controllers.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA204- 500D 600D
-
BTA204- 500E 600E 800E
BTA204- 500F 600F 800F
VDRM
Repetitive peak
off-state voltages
RMS on-state current
500
600
800
V
IT(RMS)
ITSM
4
4
25
4
25
A
A
Non-repetitive peak on-state 25
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
4
A
Tmb ≤ 107 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
25
27
3.1
100
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
t = 10 ms
A2s
A/µs
dIT/dt
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
...E
UNIT
BTA204-
...D
...F
IGT
Gate trigger current2
Latching current
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
T2+ G-
T2- G-
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
20
30
20
20
mA
mA
mA
mA
T2+ G-
T2- G-
IH
VD = 12 V; IGT = 0.1 A
VT
On-state voltage
IT = 5 A
-
-
1.4
0.7
0.4
1.7
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current VD = VDRM(max)
;
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
...E
30
TYP. MAX. UNIT
BTA204-
VDM = 67% VDRM(max)
Tj = 125 ˚C; exponential
waveform; gate open
circuit
...D
...F
dVD/dt
dIcom/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
;
20
50
-
-
-
-
-
-
V/µs
A/ms
A/ms
µs
Critical rate of change of
commutating current
VDM = 400 V; Tj = 125 ˚C; 1.0
IT(RMS) = 4 A;
2.0
2.5
dVcom/dt = 20V/µs; gate
open circuit
Critical rate of change of
commutating current
VDM = 400 V; Tj = 125 ˚C; 5.0
IT(RMS) = 4 A;
-
-
-
-
-
dVcom/dt = 0.1V/µs; gate
open circuit
Gate controlled turn-on
time
ITM = 12 A; VD = VDRM(max)
;
-
2
IG = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
IT(RMS) / A
Ptot / W
Tmb(max) / C
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
101
104
107
110
113
116
119
122
125
107 C
= 180
120
1
90
60
30
0
1
2
3
4
5
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
IT(RMS) / A
ITSM / A
12
10
8
1000
100
10
I
TSM
time
I
T
T
Tj initial = 25 C max
6
dIT/dt limit
4
T2- G+ quadrant
2
0
10us
100us
1ms
T / s
10ms
100ms
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
30
25
20
15
10
5
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
IGT(Tj)
IGT(25 C)
IT / A
12
10
8
Tj = 125 C
Tj = 25 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
unidirectional
bidirectional
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.12. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204 series D, E and F
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
6
Rev 1.000
相关型号：
©2020 ICPDF网 联系我们和版权申明