BSS123T/R [NXP]
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal;
| 型号： | BSS123T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
BSS123
FEATURES
SYMBOL
QUICK REFERENCE DATA
d
• ’Trench’ technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting
package
VDSS = 100 V
ID = 150 mA
g
RDS(ON) ≤ 6 Ω (VGS = 10 V)
s
GENERAL DESCRIPTION
PINNING
SOT23
N-channel enhancement mode
field-effect transistor in a plastic
PIN
DESCRIPTION
3
envelope
using
’trench’
1
2
3
gate
technology.
Top view
source
drain
Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer
1
2
The BSS123 is supplied in the
SOT23 subminiature surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS
VDGR
VGS
ID
IDM
PD
Drain-source voltage
Drain-gate voltage
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
-
-
-
-
-
-
100
100
± 20
150
600
0.25
150
V
V
V
mA
mA
W
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Tj, Tstg
- 55
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-a
Thermal resistance junction surface mounted on FR4 board
to ambient
500
-
K/W
August 2000
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
BSS123
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 10 µA
100
130
-
V
VGS(TO)
RDS(ON)
Gate threshold voltage
Drain-source on-state
resistance
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 120 mA
1
-
2
3.5
2.8
6
V
Ω
gfs
Forward transconductance
VDS = 25 V; ID = 120 mA
VDS = 60 V; VGS = 0 V
-
-
350
10
-
mS
nA
IDSS
Zero gate voltage drain
current
100
IGSS
ton
Gate source leakage current VGS = ±20 V; VDS = 0 V
-
-
10
3
100
10
nA
ns
Turn-on time
VDD = 50 V; RD = 250 Ω; VGS = 10 V;
RG = 50 Ω; Resistive load
toff
Turn-off time
-
12
20
ns
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
23
6
4
40
25
10
pF
pF
pF
August 2000
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
BSS123
MECHANICAL DATA
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
Fig.1. SOT23 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 2000
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
BSS123
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 2000
4
Rev 1.000
相关型号：
BSS123T1
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CALOGIC
BSS123T2
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CALOGIC
BSS123TA
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
BSS123TC
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
BSS123TRL
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
BSS123TRL13
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
BSS123W-7
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明