BLF6G10L [PHILIPS]

260 W LDMOS power transistor for base station applications;
BLF6G10L
元器件型号: BLF6G10L
生产厂家: NXP SEMICONDUCTORS    NXP SEMICONDUCTORS
描述和应用:

260 W LDMOS power transistor for base station applications

PDF文件: 总15页 (文件大小:284K)
下载文档:  下载PDF数据表文档文件
型号参数:BLF6G10L参数

BLF6G10L(S)-260PRN

RF Manual 16th edition

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0 PHILIPS

BLF6G10L-260PBM

RF Manual 16th edition

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1 PHILIPS

BLF6G10L-260PRN

RF Manual 16th edition

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4 PHILIPS

BLF6G10L-260PRN,11

RF FET LDMOS 65V 22DB SOT539A

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0 ETC

BLF6G10L-260PRN:11

RF FET LDMOS 65V 22DB SOT539A

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0 ETC

BLF6G10L-260PRN_15

Power LDMOS transistor

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0 PHILIPS

BLF6G10L-40BRN

RF Manual 16th edition

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6 PHILIPS

BLF6G10L-40BRN

Power LDMOS transistor

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22 PHILIPS

BLF6G10L-40BRN,112

BLF6G10L-40BRN

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0 PHILIPS

BLF6G10L-40BRN,118

BLF6G10L-40BRN

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0 PHILIPS

BLF6G10LS-135R

Power LDMOS transistor

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113 PHILIPS

BLF6G10LS-135R,118

RF FET LDMOS 65V 21DB SOT502B

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0 ETC

BLF6G10LS-135RN

Power LDMOS transistor

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62 PHILIPS

BLF6G10LS-135RN

RF Manual 16th edition

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7 PHILIPS

BLF6G10LS-135RN,11

RF FET LDMOS 65V 21DB SOT502B

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0 ETC