BDS60
更新时间:2024-09-18 18:01:26
品牌:NXP
描述:TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
BDS60 概述
TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 小信号双极晶体管
BDS60 规格参数
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.78 | 其他特性: | BUILT-IN BIAS RESISTOR |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 5000 ns | 最大开启时间(吨): | 1500 ns |
Base Number Matches: | 1 |
BDS60 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
BDS60-T | NXP | TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60A | PHILIPS | Transistor, | 获取价格 | |
BDS60A | NXP | TRANSISTOR 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60A-T | NXP | TRANSISTOR 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60B | NXP | TRANSISTOR 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60B | PHILIPS | Transistor, | 获取价格 | |
BDS60B-T | NXP | TRANSISTOR 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60C | NXP | TRANSISTOR 3000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS60C-T | NXP | TRANSISTOR 3000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
BDS61 | NXP | TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
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