BAT81AMO [NXP]
DIODE 0.03 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | BAT81AMO |
| 厂家： | 
NXP |
| 描述： | DIODE 0.03 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 二极管 |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BAT81; BAT82; BAT83
Schottky barrier diodes
1996 Mar 20
Product specification
Supersedes data of July 1991
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
FEATURES
DESCRIPTION
• Low forward voltage
• High breakdown voltage
• Guard ring protected
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
• Hermetically-sealed leaded glass
package
• Low diode capacitance.
k
a
handbook, halfpage
APPLICATIONS
MAM193
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
BAT81
CONDITIONS
MIN.
MAX.
UNIT
VR
40
V
V
V
−
−
−
−
−
−
BAT82
50
BAT83
60
IF
30
mA
mA
mA
°C
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
IFRM
IFSM
Tstg
Tj
tp ≤ 1 s; δ ≤ 0.5
150
500
150
125
tp ≤ 10 ms
−65
°C
−
1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
330
mV
IF = 1 mA
410
1
mV
V
IF = 15 mA
IR
reverse current
VR = VRmax; see Fig.3
f = 1 MHz; VR = 1 V; see Fig.4
nA
pF
200
1.6
Cd
diode capacitance
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
320
UNIT
K/W
Rth j-a
Note
1. Refer to SOD68 standard mounting conditions.
1996 Mar 20
3
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
GRAPHICAL DATA
MGC690
MGC689
4
2
10
10
handbook, halfpage
handbook, halfpage
(1)
I
R
(nA)
I
3
F
10
(mA)
(1) (2) (3)
2
10
10
(2)
(3)
10
1
1
−1
10
(1) (2) (3)
0.2
−1
−2
10
10
0
20
40
60
0
0.4
0.6
0.8
1.0
(V)
V
(V)
V
R
F
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MGC688
2.0
C
d
(pF)
1.5
1.0
0.5
0
0
15
30
45
60
V
(V)
R
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 20
4
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
PACKAGE OUTLINE
0.55
max
1.6
max
3.04
max
25.4 min
25.4 min
MSA212 - 1
Dimensions in mm.
Cathode indicated by a coloured band.
The diodes are type branded.
Fig.5 SOD68; (DO-34).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 20
5
相关型号：
BAT81T/R
DIODE 0.03 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
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