933817040112 [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933817040112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 晶体管 |
| 文件： | 总12页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF244
VHF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
FEATURES
PIN CONFIGURATION
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
k, halfpage
1
4
• Gold metallization ensures
excellent reliability.
d
s
g
MBB072
DESCRIPTION
2
3
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
MSB057
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
Matched gate-source voltage (VGS
groups are available on request.
)
WARNING
PINNING - SOT123
Product and environmental safety - toxic materials
PIN
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
MODE OF OPERATION
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
175
28
15
> 13
> 50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
65
UNIT
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
3
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
38
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb = 25 °C; Ptot = 38 W
4.6 K/W
Rth mb-h
thermal resistance from
Tmb = 25 °C; Ptot = 38 W
0.3 K/W
mounting base to heatsink
MRA919
MGP151
10
50
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
40
(A)
(1)
30
20
10
(1)
(2)
(2)
1
−1
10
0
0
2
1
10
10
50
100
150
V
(V)
DS
T
(°C)
h
(1) Current is this area may be limited by RDS(on)
.
(1) Short-time operation during mismatch.
(2) Continuous operation.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
VGS = 0; ID = 5 mA
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
65
−
−
−
−
−
−
−
V
IDSS
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 5 mA; VDS = 10 V
1
mA
µA
V
IGSS
−
1
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 5 mA; VDS = 10 V
matched devices
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 0.75 A; VDS = 10 V
0.6
−
−
−
S
RDS(on)
IDSX
Cis
ID = 0.75 A; VGS = 10 V
0.8
5
1.5
−
Ω
VGS = 10 V; VDS = 10 V
−
A
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
−
60
40
4.5
4.3
−
pF
pF
pF
dB
Cos
Crs
output capacitance
−
−
feedback capacitance
noise figure (see Fig. 13)
−
−
F
ID = 0.5 A; VDS = 28 V; R1 = 23 Ω;
Th = 25 °C; f = 175 MHz;
Rth mb-h = 0.3 K/W
−
−
MGP152
MGP153
6
2
handbook, halfpage
handbook, halfpage
T.C.
I
(mV/K)
D
(A)
0
4
−2
−4
−6
2
0
−8
2
3
0
4
8
12
16
1
10
10
10
V
(V)
GS
I
(mA)
D
VDS = 10 V.
solid line: Tj = 25 °C.
VDS = 10 V; valid for Tj = 25 to 125 °C.
dotted line: Tj = 125 °C.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP154
MGP155
2
160
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS(on)
(Ω)
120
80
1
C
C
is
os
40
0
0
0
0
40
80
120
160
10
20
30
40
T (°C)
V
(V)
DS
j
VGS = 0; f = 1 MHz.
VGS = 10 V; ID = 0.75 A.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
function of junction temperature, typical
values.
MGP156
20
handbook, halfpage
C
rs
(pF)
10
0
0
20
40
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
Zi
(Ω)
(note 1)
f
VDS IDQ
PL
GP
(dB)
ηD
(%)
ZL
(Ω)
R1
(Ω)
MODE OF OPERATION
(MHz) (V) (mA) (W)
CW, class-B
175
28
25
15
6
> 13
typ. 17
> 50
typ. 65
3.0 − j4.0
6.3 + j9.8
4.5 + j3.3
46.4//46.4
100
175 12.5 25
typ. 15
typ. 60
3.0 − j4.0
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
MGP157
MGP158
30
20
100
handbook, halfpage
handbook, halfpage
G
p
η
P
L
(W)
G
p
(dB)
D
(%)
η
D
20
10
50
10
0
0
0
30
0
1
2
10
20
P
(W)
IN
P
(W)
L
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9 Load power as a function of input power,
typical values.
Fig.10 Power gain and efficiency as functions of
load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP159
MGP160
20
20
100
handbook, halfpage
handbook, halfpage
G
p
η
D
(dB)
(%)
G
p
P
L
(W)
16
80
η
D
10
60
40
20
12
8
4
0
0
0
1
2
4
8
12
16
P
(W)
P (W)
L
IN
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Load power as a function of input power,
typical values.
Fig.12 Power gain and efficiency as functions of
load power, typical values.
+V
C14
C7
L6
G
R3
+V
D
R2
C13
C6
L5
C8
C9
C11
C12
L4
D.U.T.
L7
L8
50 Ω
output
C2
C3
C5
C4
R1
L3
C1
L1
L2
50 Ω
input
C10
MGP161
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
List of components (class-B test circuit)
COMPONENT
C1, C12
DESCRIPTION
VALUE
680 nF
DIMENSIONS
CATALOGUE NO.
multilayer ceramic chip capacitor
(note 1)
C2
multilayer ceramic chip capacitor
(note 1)
20 pF
C3, C4, C9
C5
film dielectric trimmer
5 to 60 pF
75 pF
2222 809 08003
2222 852 47103
multilayer ceramic chip capacitor
(note 1)
C6
C7
multilayer ceramic chip capacitor
10 nF
multilayer ceramic chip capacitor
(note 1)
100 pF
C8
multilayer ceramic chip capacitor
(note 1)
47 pF
11 pF
C10, C11
multilayer ceramic chip capacitor
(note 1)
C13
C14
L1
solid tantalum capacitor
2.2 µF
multilayer ceramic chip capacitor
100 nF
2222 852 47104
4 turns enamelled 1 mm copper wire 32 nH
length 6.3 mm
int. dia. 3 mm
leads 2 × 5 mm
L2
1 turn enamelled 1 mm copper wire 12.2 nH
int. dia. 5.6 mm
leads 2 × 5 mm
L3, L4
L5
stripline (note 2)
30 Ω
15 × 6 mm
6 turns enamelled 1 mm copper wire 119 nH
length 10.4 mm
int. dia. 6 mm
leads 2 × 5 mm
L6
L7
grade 3B Ferroxcube RF choke
4312 020 36640
2 turns enamelled 1 mm copper wire 19 nH
length 2.4 mm
int. dia. 3 mm
leads 2 × 5 mm
L8
4 turns enamelled 1 mm copper wire 28.5 nH
metal film resistor (note 3)
length 8.5 mm
int. dia. 3 mm
leads 2 × 5 mm
R1
R2
R3
0.4 W metal film resistor
0.4 W metal film resistor
1 MΩ
10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.
3. Refer to Application Information for value.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
150
strap
rivet
70
strap
L6
+V
D
C7 C14
R2
R1
C13
C6
+V
R3
G
L5
C2
C3
C11
C10
C5
C4
C8
L2
L7
L1
L8
C1
C12
L3
L4
C9
MGP162
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and
hollow rivets under the sources and around the edges to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP164
MGP165
60
25
handbook, halfpage
handbook, halfpage
R
L
Z
L
(Ω)
Z
i
(Ω)
20
40
15
10
5
x
i
20
X
L
r
i
0
20
0
20
40
60
80
100
120
40
60
80
100
120
f (MHz)
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
Fig.16 Load impedance as a function of frequency
(series components), typical values.
MGP166
40
handbook, halfpage
G
p
(dB)
36
32
28
24
20
20
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.17 Power gain as function of frequency, typical
values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明