933677220235 [NXP]
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal;
| 型号： | 933677220235 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV61
NPN general purpose double
transistor
1999 Apr 08
Product specification
Supersedes data of 1997 Jun 16
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 30 V)
• Matched pairs.
PIN
DESCRIPTION
1
2
3
4
collector TR2; base TR1 and TR2
collector TR1
emitter TR1
APPLICATIONS
emitter TR2
• For use in applications where the working point must be
independent of temperature
• Current mirrors.
handbook, hge
4
3
2
1
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
TR2
4
TR1
3
1
2
MARKING
Top view
MAM293
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCV61
1Mp
1Jp
BCV61B
BCV61C
1Kp
1Lp
Fig.1 Simplified outline (SOT143B) and symbol.
BCV61A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage TR1
collector-emitter voltage TR1
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
30
UNIT
VCBO
VCEO
VEBS
IC
−
−
−
−
−
−
−
V
V
V
open base
VCE = 0
30
6
collector current (DC)
100
200
200
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
peak collector current
IBM
peak base current TR1
total power dissipation
storage temperature
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Transistor TR1
ICBO
collector cut-off current
IE = 0; VCB = 30 V
−
−
15
5
nA
µA
nA
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
−
IEBO
hFE
emitter cut-off current
DC current gain
−
−
100
−
IC = 100 µA; VCE = 5 V
100
110
−
−
IC = 2 mA; VCE = 5 V
−
800
250
600
−
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
90
200
700
900
660
−
mV
mV
mV
mV
mV
mV
pF
IC = 100 mA; IB = 5 mA
−
base-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
−
−
−
base-emitter voltage
580
−
700
770
−
Cc
fT
collector capacitance
transition frequency
noise figure
−
2.5
−
100
−
−
MHz
dB
F
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS base-emitter forward voltage VCB = 0; IE = −250 mA
CB = 0; IE = −10 µA
IC = 2 mA; VCE = 5 V
−
−
−
−1.8
V
V
−400
−
mV
hFE
DC current gain
BCV61A
110
200
420
−
−
−
220
450
800
BCV61B
BCV61C
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Transistors TR1 and TR2
current matching of
transistors TR1 and TR2
IE2 = −0.5 mA; VCE1 = 5 V;
0.7
−
1.3
1.3
−5
IC1
-------
IE2
T
amb ≤ 25 °C
E2 = −0.5 mA; VCE1 = 5 V;
amb ≤ 150 °C
VCE1 = 5 V; note 3; (see Fig.2)
I
T
0.7
−
−
IE2
emitter current for thermal
stability of IC1
−
mA
Notes
1. Decreasing 1.7 mV/°C with increasing temperature.
2. Decreasing 2 mV/°C with increasing temperature.
3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
handbook, halfpage
handbook, halfpage
A
A
I
C1
I
2
3
1
4
C1
2
3
1
V
I
= constant
E2
TR1
TR2
CE1
V
I
= constant
E2
TR1
V
TR2
CO
CE1
4
R
R
E
E
V
CO
MBK078
MBK079
VCE1 = 5 V; device, without emitter resistors, mounted on an
FR4 printed-circuit board.
2
3
Voltage drop at contacts: VCO < -- U T 16 mV
^
=
Fig.2 Test circuit current matching.
Fig.3 BCV61 with emitter resistors.
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
MBK082
30
V
I
CE1max
(V)
E2 =
1 mA
20
5 mA
10 mA
10
50 mA
0
10
−1
2
1
10
10
R
(Ω)
E
IC1
= 1.3 (see Fig.3).
-------
IE2
Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.
1999 Apr 08
5
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 Apr 08
6
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
7
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© Philips Electronics N.V. 1999
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 08
Document order number: 9397 750 05554
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