GaAs Power Doubler, 40 - 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC砷化镓功率倍增, 40 - 1000MHz的, 22.5分贝分钟。获得@ 1GHz的375毫安最大。 @ 24VDC