PJF830 [PANJIT]
500V N-Channel Enhancement Mode MOSFET; 500V N沟道增强型MOSFET
| 型号： | PJF830 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 500V N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJP830 / PJF830
TO-220AB / ITO-220AB
TO-220AB
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A
ITO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
S
3
2
S
2
1
D
1
D
G
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2
Drain
ORDERING INFORMATION
1
TYPE
PJP830
PJF830
MARKING
P830
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
3
Source
F830
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
PJP830
PJF830
Units
V
500
+30
Gate-Source Voltage
VGS
ID
V
A
A
Continuous Drain Current
4.5
18
4.5
18
1)
Pulsed Drain Current
IDM
PD
TA=25OC
Maximum Power Dissipation
Derating Factor
87
44
W
0.7
0.35
Operating Junction and Storage Temperature Range
TJ,TSTG
EAS
-55 to +150
310
OC
Avalanche Energy with Single Pulse
IAS=4.5A, VDD=82V, L=26.5mH
mJ
Junction-to-Case Thermal Resistance
R
1.43
62.5
2.82
100
OC/W
OC/W
θJC
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
R
θJA
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
STAD-JAN.08.2010
PAGE . 1
PJP830 / PJF830
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltag e
BVDSS
VGS(th)
500
2.0
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
4.0
Drain-Source On-State
Resistance
RDS(on)
-
1.3
1.5
Ω
VGS= 10V, I D= 2.5A
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
10
uA
VDS=500V, VGS=0V
Gate Body Leakage
+100
nΑ
VGS=+30V, VDS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Qg
-
-
-
-
-
-
-
-
-
18.6
3.6
8.4
-
-
VDS=400V, ID=4.5A
VGS=10V
Q
nC
gs
Q
-
gd
t
12.8
16.4
36.2
22
26
22
56
32
980
150
d(on)
t
r
VDD=250V , ID =4.5A
ns
VGS=10V , RG=25Ω
t
d(off)
t
f
C
560
68
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
pF
oss
Reverse Transfer
Capacitance
C
-
8.2
12
rss
Source-Drain Diode
Max. Diode Forward Current
I S
-
-
-
-
-
-
-
4.5
18
1.5
-
A
A
-
Max.Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SM
VSD
-
-
V
IS=4.5A , VGS=0V
t
250
2.2
ns
uC
rr
VGS=0V, IF=4.5
A
di/dt=100A/us
Q
-
rr
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
STAD-JAN.08.2010
PAGE . 2
PJP830 / PJF830
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
10
VDS =50V
VGS= 20V~ 7.0V
9
8
10
1
6.0V
7
6
5
TJ = 125oC
25oC
4
5.0V
-55oC
3
2
1
0
0.1
0
5
10
15
20
25
30
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
7
8
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
2.4
2.2
2
2
1.8
1.6
1.4
1.2
1
ID =2.5A
1.8
1.6
1.4
1.2
1
VGS=10V
VGS = 20V
TJ =25oC
2
4
6
8
10
0
2
4
6
ID - Drain Current (A)
8
10
VGS - Gate-to-Source Voltage (V)
Fig.4 On Resistance vs Gate to Source Voltage
Fig.3 On Resistance vs Drain Current
2.9
2.5
2.1
1.7
1.3
0.9
0.5
1000
f = 1MHz
VGS = 0V
VGS =10 V
ID =2.5A
800
Ciss
600
400
200
Coss
Crss
0
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
25
30
TJ - Junction Temperature (oC)
Fig.6 Capacitance
Fig.5 On Resistance vs Junction Temperature
STAD-JAN.08.2010
PAGE. 3
PJP830 / PJF830
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
12
100
10
VGS = 0V
ID =4.5A
10
8
V
DS=400V
V
DS=250V
V
DS=100V
TJ = 125oC
1
6
25oC
-55oC
4
0.1
0.01
2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
4
8
12
Qg - Gate Charge (nC)
16
20
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
ID = 250µA
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-JAN.08.2010
PAGE. 4
PJP830 / PJF830
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JAN.08.2010
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for
packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm,
Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement
green compound material on order for the halogen free product
request.
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