PJD13N10 [PANJIT]
100V N-Channel MOSFET;
| 型号： | PJD13N10 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PPJD13N10 / PJU13N10
100V N-Channel MOSFET
100 V
13 A
Voltage
Current
Features
RDS(ON), VGS@10V,ID@6.5A<115mΩ
High power and current handing capability
Low Gate Charge
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-252, TO-251AB Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0104 ounces, 0.297 grams(TO-252)
Approx. Weight: 0.0104 ounces, 0.297 grams(TO-251AB)
Marking: D13N10(TO-252), U13N10(TO-251AB)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
VDS
VGS
ID
100
+20
V
V
Gate-Source Voltage
Continuous Drain Current
13
A
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
IDM
EAS
52
A
30
mJ
TC=25oC
Derate above 25oC
34.7
0.28
-55~150
W
Power Dissipation
PD
W/ oC
oC
Operating Junction andStorage Temperature Range
Typical Thermal resistance
TJ,TSTG
oC/W
RθJC
RθJA
3.6
-
-
Junction to Case
110
Junction to Ambient
Limited only By Maximum Junction Temperature
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PPJD13N10 / PJU13N10
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=6.5A
VGS=4.5V,ID=2A
VDS=80V,VGS=0V
VGS=+16V,VDS=0V
IS=3A,VGS=0V
100
-
-
V
V
1.5
2
2.5
115
140
1.0
+10
1.1
-
-
-
-
-
95
Drain-Source On-State Resistance
RDS(on)
mΩ
105
0.02
+4
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic
IDSS
IGSS
VSD
uA
uA
V
0.8
Total Gate Charge
Qg
Qgs
-
-
-
-
-
-
20.4
3.2
4.3
906
63
-
-
-
-
-
-
VDS=50V, ID=10A,
VGS=10V (Note 2,3)
Gate-Source Charge
Gate-Drain Charge
nC
pF
Qgd
Input Capacitance
Ciss
Coss
Crss
VDS=30V, VGS=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching
33
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
-
-
-
-
5
25
26
7
-
-
-
-
VDS=30V,RL=3Ω,
VGEN=10V, RG=6Ω
ns
A
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
IS
---
-
-
3
trr
-
-
44
80
-
-
ns
VGS=0V, IS=3.5A
dIF/ dt=100A/us (Note 2)
Qrr
nC
NOTES :
1. L=0.3mH, IAS=10A, VDD=25V, VGS=10V, RG=25ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
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PPJD13N10 / PJU13N10
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistsnce vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Source-Drain Diode Forward Voltage
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PPJD13N10 / PJU13N10
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
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PPJD13N10 / PJU13N10
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
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PPJD13N10 / PJU13N10
Packaging Information
.
TO-252 Dimension
Unit: mm
TO-251AB Dimension
Unit: mm
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PPJD13N10 / PJU13N10
PART NO PACKING CODE VERSION
Part No Packing Code
PJD13N10_L2_00001
PJU13N10_T0_00001
Package Type
TO-252
Packing type
13” tape & reel
Tube packing
Marking
D13N10
U13N10
Version
Halogen free
Halogen free
TO-251AB
MOUNTING PAD LAYOUT
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PPJD13N10 / PJU13N10
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International Inc..
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without notification. Please refer to our website for the latest document.
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particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
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