MBR1050 [PANJIT]
10 AMPERES SCHOTTKY BARRIER RECTIFIERS; 10安培肖特基二极管
| 型号： | MBR1050 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1020~MBR10100
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
Unit : inch (mm)
TO-220AC
VOLTAGE
10 Amperes
20 to 100 Volts
CURRENT
FEATURES
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
.139(3.55)
MIN
.054(1.39)
.045(1.15)
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
.038(0.96)
.019(0.50)
.025(0.65)MAX
MECHANICALDATA
Case: TO-220AC molded plastic
.1(2.54)
.1(2.54)
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams.
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL
MBR1020
20
MBR1030
30
MBR1040
40
MBR1045
45
MBR1050
50
MBR1060
60
MBR1080
80
MBR10100
100
UNITS
V
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
Maximum RMS Voltage
14
20
21
30
28
40
31.5
45
35
50
42
60
56
80
70
V
V
A
A
V
Maximum DC Blocking Voltage
Maximum Average Forward Current (See fig.1)
V
DC
100
I
AV
10
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
I
FSM
150
Maximum Forward Voltage at 10A, per leg
Maximum DC Reverse Current Tc=25 OC
V
F
0.65
0.8
0.1
15
I
R
mA
at Rated DC Blocking Voltage
T
c
=125O
C
Typical Thermal Resistance
RθJC
2
OC
/ W
Operating Junction Temperature Range
Storage Temperature Range
T
J
-50 TO
+
+
150
175
OC
OC
T
STG
-50 TO
Notes :
Both Bonding and Chip structure are available.
PAGE . 1
REV.0-MAR.30.2005
MBR1020~MBR10100
RATING AND CHARACTERISTIC CURVES
25.0
20.0
15.0
240
210
180
150
120
90
8.3ms Single
Half Since-Wave
JEDEC Method
10.0
MBR1020~MBR1045
MBR1050~MBR10100
5.0
0
60
30
0
50
150
100
0
1
2
5
10
20
50
100
CASE TEMPERATURE, O
C
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
40
20,30,40,45V
TC=125OC
10
8
1.0
6
4
50,60,80,100V
2
TC=75OC
0.1
1.0
.8
.6
.4
TC=25OC
TJ = 25OC
0.01
Pulse Width = 300us
1% Duty Cycle
.2
.1
.3
.4
.5
.6
.7
.8
.9 1.0
0.001
20
40
60
80
100
FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
PAGE . 2
REV.0-MAR.30.2005
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