ES1D [PANJIT]

SURFACE MOUNT SUPERFAST RECTIFIER; 表面安装SUPERFAST整流器
ES1D
型号: ES1D
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT SUPERFAST RECTIFIER
表面安装SUPERFAST整流器

二极管 光电二极管 IOT
文件: 总2页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ES1A THRU ES1J  
SURFACE MOUNT SUPERFAST RECTIFIER  
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere  
FEATURES  
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For surface mounted applications  
SMA/DO-214AC  
Low profile package  
Built-in strain relief  
Easy pick and place  
Superfast recovery times for high efficiency  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
Glass passivated junction  
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High temperature soldering:  
¢J  
260 /10 seconds at terminals  
MECHANICAL DATA  
Case: JEDEC DO-214AC molded plastic  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: Indicated by cathode band  
Standard packaging: 12mm tape (EIA-481)  
Weight: 0.002 ounce, 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
¢J  
Ratings at 25  
Single phase, half wave 60Hz resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOLS ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS  
50  
35  
50  
100  
70  
100  
150  
105  
150  
200  
140  
200  
1.0  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current,  
at TL=120 ¢J  
VRRM  
VRMS  
VDC  
I(AV)  
Amps  
Peak Forward Surge Current 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
Maximum Instantaneous Forward Voltage at 1.0A  
IFSM  
30.0  
Amps  
Volts  
VF  
IR  
0.95  
1.25  
1.7  
¢J  
5.0  
£g  
A
Maximum DC Reverse Current TA=25  
100  
At Rated DC Blocking Voltage TA=100 ¢J  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
TRR  
CJ  
R £KJL  
TJ,TSTG  
35.0  
10.0  
35  
nS  
PF  
¢J/W  
¢J  
-50 to +150  
NOTES:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts  
3. 8.0mm2 (.013mm thick) land areas  
RATING AND CHARACTERISTIC CURVES  
ES1A THRU ES1J  
trr  
+0.5A  
2.0  
1.0  
SINGLE PHASE HALF WAVE  
RESISTIVE OR INDUCTIVE  
P.C.B MOUNTED ON  
0.315×0.315"(8.0×8.0mm)  
PAD AREAS  
0
-0.25  
NOTE:1.Rise Time = 7ns max.  
Input Impedance = 1 megohm. 22pF  
2.Rise Time = 10ns max.  
Source Impedance = 50 Ohms  
-1.0  
25 50 75 100 125 150 175  
1cm  
SET TIME  
BASE FOR  
LEAD TEMPERATURE, ¢J  
50 ns/cm  
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND  
TEST CIRCUIT DIAGRAM  
Fig. 2-MAXIMUM AVERAGE FORWARD  
CURRENT RATING  
1000  
10  
ES1A  
100  
1
¢J  
TJ = 125  
ES1E  
ES1J  
10  
0.1  
TJ = 75¢J  
¢J  
TJ = 25  
1
0.01  
¢J  
TJ = 25  
0.1  
0.001  
20  
40  
60  
80  
100  
120  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
% OF PIV. VOLTS  
INSTANTANEOUS FORWARD VOLTAGE VOLTS  
Fig. 3-TYPICAL REVERSE CHARACTERISTICS  
Fig. 4-TYPICAL FORWARD CHARACTERISTICS  
14  
12  
30  
25  
10  
8.3ms SINGLE HALF SINE WAVE  
20  
JEDEC METHOD  
TJ = 25¢J  
f = 1.0MHz  
8.0  
15  
Vsig = 50mVp-p  
6.0  
10  
5
4.0  
2.0  
1
2
5
10  
20  
50  
100  
.1  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
REVERSE VOLTAGE, VOLTS  
Fig. 5-MAXIMUM NON-REPETITIVE SURGE  
CURRENT  
Fig. 6-TYPICAL JUNCTION CAPACITANCE  

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