ER1000CT_04 [PANJIT]
SUPERFAST RECOVERY RECTIFIERS; 超快恢复整流二极管型号: | ER1000CT_04 |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | SUPERFAST RECOVERY RECTIFIERS |
文件: | 总2页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
ER1000CT~ER1004CT
SUPERFAST RECOVERY RECTIFIERS
Unit : inch (mm)
TO-220AB
50 to 400 Volts
VOLTAGE
FEATURES
CURRENT 10 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
.419(10.66)
.196(5.00)
.163(4.16)
.387(9.85)
Flame Retardant Epoxy Molding Compound.
.139(3.55)
MIN
.054(1.39)
.045(1.15)
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
.038(0.96)
.019(0.50)
.025(0.65)MAX
MECHANICALDATA
Case: TO-220AB Molded plastic
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
.1(2.54)
.1(2.54)
AC
AC
Positive CT
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
MAXIMUMRATINGANDELECTRICALCHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL ER1000CT ER1001CT ER1001ACT ER1002CT ER1003CT ER1004CT UNITS
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
Maximum RMS Voltage
V
V
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Current .375"(9.5mm)
I
AV
10.0
150
A
lead length at Tc =100O
C
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I
FSM
A
Maximum Forward Voltage at 5A, per element
V
F
0.95
1.30
V
Maximum DC Reverse Current at TA=25O
Rated DC Blocking VoltageTA=100O
C
10
500
I
R
uA
ns
C
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Maximum Thermal Resistance
T
RR
35
50
C
J
62
pF
OC / W
OC
RθJC
3.0
Operating Junction and Storage Temperature Range
T
J
,TSTG
-50 TO +150
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
PAGE . 1
STAD-NOV.24.2004
RATING AND CHARACTERISTIC CURVES
10
8
150
125
8.3ms Single
Half Since-Wave
JEDEC Method
6
100
75
4
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
50
25
2
0
0
20
40
60
80
100 120 140 160
0
1
2
5
10
20
50
100
CASE TEMPERAURE, O
C
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
103
10
5 0 -2 0 0 V
2
1 0
TJ C
=125O
3 0 0 -4 0 0 V
1
1 0
1.0
100
10-1
10-2
T
J
= 2 5 O C
TA C
= 2 5 O
0.1
0.4
0.6
0.8
1.0
1.2
1.4
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLATGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
PAGE . 2
STAD-NOV.24.2004
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