BC856AW [PANJIT]
PNP GENERAL PURPOSE TRANSISTORS; PNP通用晶体管
| 型号： | BC856AW |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | PNP GENERAL PURPOSE TRANSISTORS |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856AW ~ BC859CW
PNP GENERAL PURPOSE TRANSISTORS
CURRENT
200 mWatts
30/45/65 Volts
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current IC = 100mA
0.087(2.20)
0.070(1.80)
• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
BC849W Series
0.054(1.35)
0.045(1.15)
• In compliance with EU RoHS 2002/95/EC directives
0.006(0.15)
0.002(0.05)
0.056(1.40)
0.047(1.20)
MECHANICALDATA
• Case: SOT-323, Plastic
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
0.016(0.40)
0.008(0.20)
Device Marking:
BC856AW=56A BC857AW=57A BC858AW=58A
BC856BW=56B BC857BW=57B BC858BW=58B
BC859BW=59B
BC857CW=57C BC858CW=58C BC859CW=59C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Symbol
VCEO
Value
Units
BC856W
BC857W
BC858W, BC859W
-65
-45
-30
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
V
V
V
BC856W
BC857W
BC858W, BC859W
-80
-50
-30
VCBO
BC856W
BC857W
6.0
6.0
VEBO
BC858W, BC859W
-5.0
Collector Current - Continuous
Max Power Dissipation (Note 1)
Storage Temperature Range
Junction Temperature Range
I C
PTOT
TSTG
TJ
-100
200
mA
mW
OC
-55 to 150
-55 to 150
OC
December 17,2010-REV.00
PAGE . 1
BC856AW ~ BC859CW
THERMALCHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
RθJA
RθJC
400
100
Thermal Resistance
OC/W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PARAMETER
Symbol
MIN.
TYP.
-
MAX.
-
Units
V
BC856AW,BW
Collector - Emitter Breakdown Voltage
BC857AW/BW/CW,
-65
-45
-30
V(BR)CEO
(IC=-10mA, IB=0)
BC858AW/BW/CW,BC859BW/CW
BC856AW,BW
BC857AW/BW/CW,
BC858AW/BW/CW,BC859BW/CW
-80
-50
-30
Collector - Base Breakdown Voltage
(IC=-10μA, IE=0)
V
(BR)CBO
-
-
-
V
Emitter-Base Breakdown Voltage
(IE=-1uA, IC=0)
V(BR)EBO
-5.0
-
V
Emitter-Base Cutoff Current
(VEB=-5V)
IEBO
-
-
-
-
-100
nA
Collector-Base Cutoff Current
(VCB=-30V, IE=0)
TJ=25OC
TJ=150OC
-15
-4.0
nA
μA
ICBO
DC Current Gain
BC856~BC858 Suffix "AW"
90
(IC=-10μA, VCE=-5V)
BC856~BC859 Suffix "BW"
BC857~BC859 Suffix "CW"
hFE
-
150
270
-
-
-
DC Current Gain
(IC=-2.0mA, VCE=-5V)
BC856~BC858 Suffix "AW"
BC856~BC859 Suffix "BW"
BC857~BC859 Suffix "CW"
110
200
420
180
290
520
220
450
800
hFE
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
-
-
-
-
-0.3
-0.65
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Voltage
VCE(SAT)
VBE(SAT)
VBE(ON)
CCB
V
V
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
-
-
-0.7
-0.9
-
-
(IC=-2mA, VCE=-5.0V)
(IC=-10mA, VCE=-5.0V)
-0.60
-
-
-
-0.75
-0.82
V
Collector - Base Capacitance
(VCB=-10V, IE=0, f=1MHZ)
-
-
-
4.5
-
pF
MHZ
Current-Gain-Bandwidth Product
(IC=-10mA, VCE=-5.0V,f=100MHZ)
F.
200
December 17,2010-REV.00
PAGE . 2
BC856AW ~ BC859CW
ELECTRICALCHARACTERISTICSCURVE
600.0
0.900
0.800
0.700
0.600
0.500
0.400
0.300
0.200
0.100
0.000
B C 857B
T = 150˚C
J
500.0
400.0
T = 25˚C
J
T = 100˚C
J
300.0
T = 25˚C
T = 100˚C
J
J
T = 150˚C
J
200.0
100.0
V
C E = -5V
V
C E = -5V
0.0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 1. Typical hFE vs. Collector Current
Fig. 2. Typical VBE(ON) vs. Collector Current
14.00
0.30
0.25
0.20
0.15
0.10
0.05
0.00
f = 100MH z
12.00
10.00
8.00
6.00
4.00
2.00
0.00
C IB (E B )
T = 100˚C
J
T = 150˚C
J
C OB (B C )
T = 25˚C
J
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage, VR (V)
Fig. 3. Typical VCE(SAT) vs. Collector Current
Fig. 5. Typical Capacitances vs. Reverse Voltage
December 17,2010-REV.00
PAGE . 3
BC856AW ~ BC859CW
MOUNTING PAD LAYOUT
SOT-323
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
December 17,2010-REV.00
PAGE . 4
相关型号：
BC856AW-13
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
BC856AW-TAPE-13
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC856AW-TAPE-7
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC856AW/T3
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal
NXP
BC856AWE6327
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC856AWE6433
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明