BC848AW [PANJIT]
NPN GENERAL PURPOSE TRANSISTORS; NPN通用晶体管
| 型号： | BC848AW |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | NPN GENERAL PURPOSE TRANSISTORS |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BC846W,BC847W,BC848W,BC849W,BC850W SERIES
NPN GENERAL PURPOSE TRANSISTORS
Unit: inch (mm)
SOT-323
150 mWatts
CURRENT
30/45/65 Volts
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
.087(2.2)
.070(1.8)
• Collector current IC = 100mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.054(1.35)
.045(1.15)
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
MECHANICALDATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
.004(.10)MAX.
D evice M arking:
.016(.40)
.078(.20)
BC 846AW =46A BC 847AW =47A BC 848AW =48A
BC 846BW =46B BC 847BW =47B BC 848BW =48B BC 849BW =49B BC 850BW =50B
BC 847C W =47C BC 848C W =48C BC 849C W =49C BC 850C W =50C
ABSOLUTE RATINGS
PARAMETER
BC846
Symbol
Value
Units
V
65
45
30
Collector - Emitter Voltage
Collector - Base Voltage
BC847,BC850
BC848,BC849
V
V
V
CEO
BC846
BC847,BC850
BC848,BC849
80
50
30
CBO
EBO
V
BC846
BC847,BC850
BC848,BC849
6.0
6.0
5.0
Emitter - Base Voltage
V
Collector Current - Continuous
I
C
100
mA
THERMALCHARACTERISTICS
PARAM ETER
Sym bol
Value
150
Units
m W
M axPowerD issipation (Note 1)
PTO T
Therm alResistance ,Junction to Am bient
Junction Tem perature
RθJA
833
O C /W
O C
TJ
-55 to 150
-55 to 150
Storage Tem perature
TISTG
O C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
PAGE . 1
ELECTRICALCHARACTERISTICS
PARAMETER
BC846AW,BW
Emitter Breakdown Voltage BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
Symbol
Test Condition
MIN.
TYP.
-
MAX.
-
Units
V
65
45
30
Collector
Collector
-
-
V
V
V
(BR)CEO IC=10mA, IB=0
(BR)CBO IC=10uA, IE=0
(BR)EBO IE=10uA, IC=0
BC846AW,BW
80
50
30
Base Breakdown Voltage
BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
-
-
-
V
BC846AW,BW
6.0
6.0
5.0
Emitter
-
Base Breakdown Voltage
BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
-
V
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
I
I
EBO
CBO
VEB=5
-
-
-
-
100
nA
VCB=30V, IE=0
VCB=30V, IE=0,T
15
5.0
nA
uA
J
=150O
C
BC846~BC848 Suffix "AW"
BC846~BC850 Suffix "BW"
BC847~BC850 Suffix "CW"
90
150
270
DC Current Gain
DC Current Gain
hF E
IC=10uA, VCE=5V
-
-
-
-
BC846~BC848 Suffix "AW"
BC846~BC850 Suffix "BW"
BC847~BC850 Suffix "CW"
110
200
420
180
290
520
220
450
800
hF E
IC=2.0mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
0.25
0.6
Collector
-
Emitter Saturation Voltage
V
CE(SAT)
CE(SAT)
CE(SAT)
-
-
-
V
V
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
0.7
0.9
Base
Base
-
-
Emitter Saturation Voltage
Emitter Voltage
V
V
-
IC=2mA, VCE=5.0V
IC=10mA, VCE=5.0V
0.58
-
0.660
-
0.70
0.77
V
Collector
-
Base Capacitance
C
CBO
VCB=10V, IE=0, f=1MH
-
-
4.5
pF
STAD-JUL.06.2004
PAGE . 2
ELECTRICALCHARACTERISTICSCURVE(BC846AW,BC847AW,BC848AW)
300
100
T =150˚ C
J
VCB=30V
250
200
150
100
50
T =100˚ C
J
10
1
T =25 C
J
VCE=5V
0.1
0
0
0.01
1
10
100
1000
25
50
75
100
125
150
Collector Current, IC (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1200
1000
800
600
400
200
0
1000
100
10
T = 25 ˚C
J
T = 100 ˚C
J
T = 100 ˚C
J
T = 150 ˚C
J
T = 25 ˚C
J
VCE=5V
IC/IB=20
T = 150 ˚C
J
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1200
1000
800
600
400
200
0
TJ = 25 ˚C
C
ib (EB)
T = 25 ˚C
J
T = 100 ˚C
J
Cob (CB)
IC/IB=20
T = 150 ˚C
J
1
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
STAD-JUL.06.2004
PAGE . 3
ELECTRICALCHARACTERISTICSCURVE(BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
500
450
400
350
300
250
200
150
100
50
100
10
1
T =150˚ C
VCE=5V
J
VCB=30V
T =100˚ C
J
T =25 ˚C
J
0
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Junction Temperature, TJ (OC)
Collector Current, IC (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
800
600
400
200
0
T = 25 ˚C
J
T = 100 ˚C
J
T = 100 ˚C
J
TJ = 150 ˚C
100
T = 25 ˚C
J
IC/IB=20
100
VCE=5V
T = 150 ˚C
J
10
0.01
0.1
1
10
1000
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
1000
800
600
400
200
0
10
C
ib (EB)
T = 25 ˚C
J
TJ = 25 ˚C
T = 100 ˚C
J
Cob (CB)
IC/IB=20
T = 150 ˚C
J
1
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
STAD-JUL.06.2004
PAGE . 4
ELECTRICALCHARACTERISTICSCURVE(BAC847CW,BC848CW,BC849CW,BC850CW)
1200
100
VCE=5V
VCB=30V
T =150˚ C
J
1000
800
600
400
200
0
T =100˚ C
10
1
J
T =25 C
J
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Collector Current, IC, (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
800
600
400
200
0
T = 25 ˚C
J
T = 100 ˚C
J
T = 100 ˚C
J
T = 150 ˚C
J
100
T = 25 ˚C
J
VCE=5V
IC/IB=20
T = 150 ˚C
J
10
10
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
1000
800
600
400
200
0
T = 25 ˚C
J
C
ib (EB)
T = 25 ˚
C
J
T = 100 ˚C
J
Cob (CB)
IC/IB=20
10
T = 150 ˚C
J
1
0.01
0.1
1
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
STAD-JUL.06.2004
PAGE . 5
MOUNTING PAD LAYOUT
Unit: inch (mm)
SOT-323
0.025(0.65)
0.028(0.7)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGALSTATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUL.06.2004
PAGE . 6
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