BC847AS [PANJIT]
NPN GENERAL PURPOSE TRANSISTORS; NPN通用晶体管
| 型号： | BC847AS |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | NPN GENERAL PURPOSE TRANSISTORS |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846BS & BC847AS
NPN GENERAL PURPOSE TRANSISTORS
POWER
150 mWatts
45/65 Volts
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.006 gram
Marking :
BC846BS=46S
BC847AS=47A
ABSOLUTE RATINGS
Parameter
Symbol
Value
Units
V
BC846BS
BC847AS
65
45
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
V
V
V
CEO
CBO
EBO
BC846BS
BC847AS
80
50
V
V
6.0
Collector Current - Continuous
I
C
100
mA
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Units
mW
Max Power Dissipation (Note 1)
P
TOT
150
Junction Temperature
Storage Temperature
T
J
-55 to 150
-55 to 150
OC
OC
TSTG
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0.0-SEP.12.2008
PAGE . 1
BC846BS & BC847AS
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
MIN.
TYP.
-
MAX.
-
Units
V
BC846BS
BC847AS
65
45
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
V
(BR)CEO IC=10mA, IB=0
(BR)CBO IC=10uA, IE=0
(BR)EBO IE=10uA, IC=0
BC846BS
BC847AS
80
50
V
V
-
-
-
V
6.0
-
V
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
DC Current Gain
I
I
EBO
CBO
VEB=5
-
-
-
-
100
nA
VCB=30V, IE=0
VCB=30V, IE=0,T
15
5.0
nA
uA
J
=150OC
BC846BS
BC847AS
150
90
hFE
IC=10uA, VCE=5V
-
-
-
-
DC Current Gain
BC846BS
BC847AS
200
110
290
180
450
220
hFE
IC=2.0mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
0.25
0.6
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Voltage
V
CE(SAT)
BE(SAT)
BE(SAT)
-
-
-
V
V
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
0.7
0.9
V
V
-
IC=2mA, VCE=5.0V
IC=10mA, VCE=5.0V
0.58
-
0.660
-
0.70
0.77
V
Collector - Base Capacitance
C
CBO
VCB=10V, IE=0, f=1MH
-
-
4.5
pF
REV.0.0-SEP.12.2008
PAGE . 2
BC846BS & BC847AS
ELECTRICALCHARACTERISTICSCURVE
100
300
250
200
150
100
50
T
J
=150oC
V
CB=30V
T
J
=100oC
10
TJ
=25oC
1
V
CE=5V
0
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Junction Temperature, T
J
(oC)
Collector Current, I (mA)
C
Fig. 2. Typical hFE vs. Collector Current
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000
1000
TJ
=25oC
TJ
=100oC
800
600
TJ
=100oC
TJ
=150oC
100
TJ
=25oC
400
200
0
T
J
=150oC
0.1
I
C
/I
B
=20
V
CE=5V
10
0.01
0.01
1
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I (mA)
C
Fig. 3. Typical VBE (on) vs. Collector Current
Fig. 4. Typical VCE(sat) vs Collector Current
1200
1000
10
T
J
=25oC
C
IB (EB)
TJ
=25oC
800
600
400
200
0
TJ
=100oC
C
OB (CB)
T
J
=150oC
0.1
I
C
/I
B
=20
100
1
0.1
1
10
100
0.01
1
10
Collector Current, I
C
(mA)
Reverse Voltage(V)
Fig. 6. Typical Capacitances vs. Reverse Voltage
Fig. 5. Typical Capacitances vs. Reverse Voltage
REV.0.0-SEP.12.2008
PAGE . 3
BC846BS & BC847AS
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2008
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-SEP.12.2008
PAGE . 4
相关型号：
BC847AS62Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BC847AT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明