BAT54DTB6 [PANJIT]
SURFACE MOUNT SCHOTTKY DIODE ARRAYS; 表面装载肖特基二极管阵列
| 型号： | BAT54DTB6 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT SCHOTTKY DIODE ARRAYS |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54TB6/ATB6/CTB6/STB6/DTB6
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
SOT-563
VOLTAGE
30 Volts
POWER
200mWatts
FEATURES
Isolated diode arrays for significant board space savings
Surface mount package ideally suited for automatic insertion
Extremely Fast Switching Speed
Very Low VF: 0.347V (Typ) at IF = 10mA
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case : SOT-563 plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.003 gram
Marking :
BAT54TB6
TH
BAT54ATB6
TJ
BAT54CTB6
TY
BAT54STB6
T6
BAT54DTB6
TL
ABSOLUTE RATINGS (each diode)
Parameter
Symbol
Value
30
Units
V
Maximum Reverse Voltage
VR
Peak Reverse Voltage
V
RRM
30
V
A
Continuous Forward Current
I
F
0.2
THERMALCHARACTERISTICS
Parameter
Symbol
Value
200
Units
mW
Power Dissipation (Note 1)
PTOT
Thermal Resistance, Junction to Ambient (Note 1)
Junction Temperature
RθJA
625
OC/W
OC
TJ
-55 to 125
-55 to 150
Storage Temperature
TSTG
OC
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
BAT54TB6
BAT54ATB6
BAT54CTB6
BAT54STB6
BAT54DTB6
REV.0.3-JAN.15.2010
PAGE . 1
BAT54TB6/ATB6/CTB6/STB6/DTB6
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
Parameter
Symbol
Test Condition
=100 uA
=25 V
MIN.
30
TYP.
-
MAX.
-
Units
V
Reverse Breakdown Voltage
V
(BR)
I R
Reverse Current
Forward Voltage
Total Capacitance
I
R
V
R
-
-
2.0
μA
V
I
I
I
I
I
F
=0.1mA
=1.0mA
=10mA
=30mA
=100mA
-
-
-
-
-
-
-
0.24
0.32
0.40
0.50
1.00
F
F
F
F
V
F
T
0.347
-
-
C
V
R
=1V, f=1.0MH
Z
-
-
10
pF
ELECTRICAL CHARACTERISTICS CURVES
10
TJ
=75OC
1.0
0.1
J
J
J
T
T
J
=25OC
J
0.01
J
=-25OC
J
0.001
0
5
10
15
20
25
30
V
R, Reverse Voltage(V)
Fig. 1- Typical Reverse Leakage
Fig. 2- Forward Characteristics
14
12
10
8
6
4
2
0
0
10
20
30
VR, Reverse Voltage (V)
Fig. 3- Typical Total capacitance
REV.0.3-JAN.15.2010
PAGE . 2
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