BAS21S [PANJIT]

SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES; 表面安装,高电压双开关二极管
BAS21S
型号: BAS21S
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES
表面安装,高电压双开关二极管

二极管 开关 光电二极管 高压
文件: 总3页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
BAS21A/C/S  
SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES  
Unit: inch (mm)  
SOT- 23  
250mWatts  
250 Volts  
POWER  
VOLTAGE  
FEATURES  
• High reverse bearkdown voltage.  
• Fast switching speed.  
.119(3.00)  
.110(2.80)  
• Low reverse leakage current.  
• Surface mount package ideally suited for automatic insertion.  
• Galvanically isolated dual configurations to save board space.  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
.083(2.10)  
.066(1.70)  
.006(.15)  
.002(.05)  
Pb free: 98.5% Sn above  
MECHANICALDATA  
.006(.15)MAX  
.020(.50)  
.013(.35)  
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Approx. Weight: 0.008 gram  
Marking : BAS21A:21A, BAS21C:21C, BAS21S:21S  
ABSOLUTE RATINGS  
PARAMETER  
Symbol  
Value  
250  
Units  
V
Maximum Reverse Voltage  
VR  
Peak Reverse Voltage  
V
RRM  
250  
0.2  
2.5  
V
A
A
Average Rectified Current at Temp=25O  
C
I O  
Non-repetitive Peak Forward Surge Current at t=1.0 s  
IFSM  
THERMALCHARACTERISTICS  
PA RA ME TE R  
S ymbol  
Value  
Uni ts  
mW  
P ower D i ssi pati on  
P
TOT  
250  
357  
Thermal Resi stance, Juncti on to A mbi ent  
Juncti on Temperature  
RθJA  
O C /W  
O C  
T
J
150  
S torage Temperature  
T
S TG  
-55 to 150  
O C  
SERIES  
COMMON ANODE  
COMMON CATHODE  
BAS21C  
BAS21S  
BAS21A  
STAD-JUL.13.2004  
PAGE . 1  
ELECTRICALCHARACTERISTICS  
PARAMETER  
Symbol  
Test Condition  
MIN.  
--  
TYP.  
--  
MAX.  
250  
Units  
V
Reverse Breakdown Voltage  
V
(BR)  
IR=100 uA  
V
V
R
=200 V  
=200 V, T  
0.1  
100  
Reverse Current  
I
R
--  
--  
--  
--  
--  
--  
--  
--  
uA  
V
R
J
= 150OC  
IF  
=1.0mA  
0.70  
1.00  
Forward Voltage  
VF  
IF=100mA  
Maximum Junction Capacitance  
Reverse Recovery Time  
C
J
V
R=0V, f=1.0MH  
Z
5.0  
50  
pF  
ns  
Trr  
IF=IR=30mA, RL=100  
ELECTRICAL CHARACTERISTICS CURVES  
1000  
100  
100  
10  
TJ  
=25OC  
10  
1.0  
1.0  
0.1  
0.1  
0.01  
0.01  
0
1.0  
2.0  
0
100  
200  
, JUNCTION TEMPERATURE,OC  
FORWARD VOLTAGE, VOLTS  
T
J
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE  
FIG. 1-TYPICAL FORWARD CHARACTERISTIC  
6.0  
4.5  
3.0  
500  
400  
300  
200  
1.5  
0
100  
0
50  
100  
150  
200  
0
2
4
6
8
AMBIENT TEMPERATURE(OC)  
REVERSE VOLTAGE, VOLTS  
FIG. 3 TYPICAL JUNCTION CAPACITANCE  
FIG. 4 POWER DERATING CURVE  
STAD-JUL.13.2004  
PAGE . 2  
MOUNTING PAD LAYOUT  
Unit: inch (mm)  
SOT-23  
0.037(0.95)  
0.031(0.8)  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3.0K per 7" plastic Reel  
LEGALSTATEMENT  
IMPORTANT NOTICE  
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation  
of the device in the application. The information will help the customer's technical experts determine that the device is  
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed  
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products  
and improvements in products and product characterization are constantly in process. Therefore, the factory should be  
consulted for the most recent information and for any special characteristics not described or specified.  
Copyright Pan Jit International Inc. 2003  
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright  
owner.  
The information presented in this document does not form part of any quotation or contract. The information presented is  
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the  
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
STAD-JUL.13.2004  
PAGE . 3  

相关型号:

BAS21S-A

Switching Diode
YEASHIN

BAS21S-T

Rectifier Diode,
MCC

BAS21S-TP

Rectifier Diode, 2 Element, 0.2A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

BAS21S2

High voltage switching diode
CYSTEKEC

BAS21S62Z

Rectifier Diode, 1 Element, 0.2A, Silicon
FAIRCHILD

BAS21S62Z

200V, SILICON, SIGNAL DIODE, TO-236AB
TI

BAS21SG

High voltage switching diode
CYSTEKEC

BAS21SLT1

Dual Series High Voltage Switching Diode
ONSEMI

BAS21SLT1/D

Dual Series High Voltage Switching Diode
ETC

BAS21SLT1D

Dual Series High Voltage Switching Diode
ONSEMI

BAS21SLT1G

Dual Series High Voltage Switching Diode
ONSEMI

BAS21SN3

High voltage switching (double) diodes
CYSTEKEC