2N7002K-AU_AX_10001 [PANJIT]

60V N-Channel Enhancement Mode MOSFET - ESD Protected; 60V N沟道增强型MOSFET - ESD保护


型号：	2N7002K-AU_AX_10001
厂家：	PAN JIT INTERNATIONAL INC.
描述：	60V N-Channel Enhancement Mode MOSFET - ESD Protected 60V N沟道增强型MOSFET - ESD保护
文件：	总7页 (文件大小：326K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N7002K-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

Unit：inch(mm)

SOT-23

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

0.120(3.04)

0.110(2.80)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

0.056(1.40)

0.047(1.20)

• Acqire quality system certificate : TS16949

0.008(0.20)

0.003(0.08)

0.079(2.00)

0.070(1.80)

• AEC-Q101 qualified

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.044(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

MECHANICAL DATA

• Case: SOT-23 Package

0.020(0.50)

0.013(0.35)

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight: 0.0003 ounces, 0.0084 grams

• Marking : K72

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

+20

300

I_D

Pulsed Drain Current

I_DM

2000

T_A=25^OC

T_A=75^OC

350

210

Maximum Power Dissipation

P_D

^OC

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_STG

-55 to + 150

357

R_θJA

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

October 29,2010-REV.02

PAGE . 1

2N7002K-AU

ELECTRICALCHARACTERISTICS

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Units

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate Body Leakage

BV_DSS

V_GS(th)

R_DS(on)

I_DSS

V_GS=0V , I_D=10μA

V_DS=V_GS, I_D=250μA

V_GS=4.5V , I _D=200mA

V_GS=10V , I _D=500mA

V_DS=60V , V_GS=0V

2.5

4.0

3.0

μA

I_GSS

V_GS=+20V , V_DS=0V

V_DS=15V , I_D=250mA

+10

Forward Transconductance

g_fS

100

Dynamic

V_DS=15V, I_D=200mA

Total Gate Charge

Q_g

0.8

_GS=5V

Turn-On Time

t_on

V_DD=30V , R_L=150Ω

I_D=200mA , V_GEN=10V

R_G=10Ω

Turn-Off Time

t_off

Input Capacitance

C_iss

C_oss

C_rss

V_DS=25V , V_GS=0V

f=1.0MH_Z

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Diode Forward Voltage

Continuous Diode Forward Current

Pulse Diode Forward Current

V_SD

I_S=200mA , V_GS=0V

0.82

1.3

300

I_S

I_SM

2000

Switching

Gate Charge

Test Circuit

VGS

OUT

1mA

October 29,2010-REV.02

PAGE . 2

2N7002K-AU

Typical Characteristics Curves (T_A=25^OC,unless otherwise noted)

1.2

V_GS= 6.0~10V

5.0V

V_DS=10V

0.8

0.6

0.4

0.2

4.0V

0.6

0.4

0.2

3.0V

25^oC

V_DS- Drain-to-Source Voltage (V)

V_GS- Gate-to-Source Voltage (V)

^{Fig. 1}F^-TI^YG^P.1^IC-^ALO^Fu^Otp^Ru^Wt^ARC^Dh^Ca^Hra^Ac^Rte^Ar^Cis^Tt^Eic^RISTIC

FIG.2- Transfer Characteristic

V_GS= 4.5V

I_D=500mA

I_D=200mA

GS=10V

0.4

0.2

0.6

0.8

V_GS- Gate-to-Source Voltage (V)

I_D- Drain Current (A)

FIG.3- On Resistance vs Drain Current

FIG.4- On Resistance vs Gate to Source Voltage

1.8

V_GS=10V

I_D=500mA

1.6

1.4

1.2

0.8

0.6

-50 -25

75 100 125 150

T_J- Junction Temperature ( ^oC)

FIG.5- On Resistance vs Junction Temperature

October 29,2010-REV.02

PAGE . 3

2N7002K-AU

Vgs

V_DS=10V

I_D=250mA

Qsw

Vgs(th)

Qg(th)

0.2

0.4

0.6

0.8

Qgs

Qgd

Q_g- Gate Charge (nC)

Fig.7 - Gate Charge

Fig.6 - Gate Charge Waveform

1.2

I_D=250mA

ID = 250mA

1.1

0.9

0.8

0.7

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J- Junction Temperature ( ^oC)

T_J- Junction Temperature ( C)

Fig.8 - Threshold Voltage vs Temperature

Fig.9 - Breakdown Voltage vs Junction Temperature

f = 1MHz

V_GS= 0V

T_J= 125 C

-55^oC

Ciss

0.1

Coss

25^oC

Crss

0.01

0.2

0.4

0.6

0.8

1.2

1.4

1.6

- Drain-to-Source Voltage (V)

V_SD- Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

Fig.11 - Capacitance vs Drain to Source Voltage

October 29,2010-REV.02

PAGE . 4

2N7002K-AU

MOUNTING PAD LAYOUT

Unit：inch(mm)

SOT-23

0.031 MIN.

(0.80) MIN.

0.037

(0.95)

0.043

(1.10)

0.106

(2.70)

ORDER INFORMATION

• Packing information

T/R - 12K per 13" plastic Ree

T/R - 3K per 7” plastic Reel

October 29,2010-REV.02

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2N7002K-AU

Part No_packing code_Version

2N7002K-AU_R1_000A1

2N7002K-AU_R2_000A1

For example :

RB500V-40_R2_00001

Serial number

Part No.

Version code means HF

Packing size code means 13"

Packing type means T/R

Packing Code XX

Version Code XXXXX

Packing type

1^stCode

Packing size code

2^ndCode HF or RoHS 1^stCode 2^nd~5^thCode

Tape and Ammunition Box

(T/B)

N/A

serial number

Tape and Reel

(T/R)

RoHS

Bulk Packing

(B/P)

13"

Tube Packing

(T/P)

26mm

52mm

Tape and Reel (Right Oriented)

(TRR)

Tape and Reel (Left Oriented)

(TRL)

PANASERT T/B CATHODE UP

(PBCU)

PANASERT T/B CATHODE DOWN

(PBCD)

FORMING

October 29,2010-REV.02

PAGE . 6

2N7002K-AU

Disclaimer

Reproducing and modifying information of the document is prohibited without permission

from Panjit International Inc..

•

Panjit International Inc. reserves the rights to make changes of the content herein the

document anytime without notification. Please refer to our website for the latest

document.

Panjit International Inc. disclaims any and all liability arising out of the application or use of

any product including damages incidentally and consequentially occurred.

•

Panjit International Inc. does not assume any and all implied warranties, including warranties

of fitness for particular purpose, non-infringement and merchantability.

Applications shown on the herein document are examples of standard use and operation.

Customers are responsible in comprehending the suitable use in particular applications.

Panjit International Inc. makes no representation or warranty that such applications will be

suitable for the specified use without further testing or modification.

The products shown herein are not designed and authorized for equipments requiring high

level of reliability or relating to human life and for any applications concerning life-saving

or life-sustaining, such as medical instruments, transportation equipment, aerospace

machinery et cetera. Customers using or selling these products for use in such applications

•

do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages

resulting from such improper use or sale.

Since Panjit uses lot number as the tracking base, please provide the lot number for tracking

when complaining.

October 29,2010-REV.02

PAGE . 7

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