2EZ17 [PANJIT]

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts); 玻璃钝化结硅稳压二极管(电压 - 11至200伏电源 - 2.0瓦特)
2EZ17
型号: 2EZ17
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)
玻璃钝化结硅稳压二极管(电压 - 11至200伏电源 - 2.0瓦特)

稳压二极管 测试
文件: 总5页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2EZ11 THRU 2EZ200  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE  
VOLTAGE - 11 TO 200 Volts  
Power - 2.0 Watts  
FEATURES  
l
l
l
l
Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
DO-15  
l
l
Excellent clamping capability  
£g  
Typical ID less than 1 A above 11V  
l
High temperature soldering :  
¢J  
260 /10 seconds at terminals  
l
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
MECHANICAL DATA  
Case: JEDEC DO-15, Molded plastic over passivated junction  
Terminals: Solder plated, solderable per MIL-STD-750,  
method 2026  
Polarity: Color band denotes positive end (cathode)  
Standard Packaging: 52mm tape  
Weight: 0.015 ounce, 0.04 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
¢J  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PD  
VALUE  
UNITS  
Watts  
Peak Pulse Power Dissipation (Note A)  
2
¢J  
24  
¢J  
Derate above 75  
mW/  
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated  
load(JEDEC Method) (Note B)  
IFSM  
15  
Amps  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
¢J  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses  
per minute maximum.  
2EZ11 THRU 2EZ200  
¢J  
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2 V max , IF=500 mA for all types  
Type No. Nominal Zener  
(Note 1.) Voltage Vz @ IZT current  
Test  
Maximum Zener Surge Current  
Maximum Zener Impedance (Note 3.)  
Leakage Current  
Current  
IZM  
Madc  
¢J  
@ TA = 25  
volts  
(Note 2.)  
IZT  
mA  
ir - mA  
ZZT @ IZT  
Ohms  
ZZk @ IZK  
Ohms  
IZK  
IR  
VR  
(Note 4.)  
£g  
A Max  
mA  
@
Volts  
2EZ11  
2EZ12  
2EZ13  
2EZ14  
2EZ15  
2EZ16  
2EZ17  
2EZ18  
2EZ19  
2EZ20  
2EZ22  
2EZ24  
2EZ27  
2EZ30  
2EZ33  
2EZ36  
2EZ39  
2EZ43  
2EZ47  
2EZ51  
2EZ56  
2EZ62  
2EZ68  
2EZ75  
2EZ82  
2EZ91  
2EZ100  
2EZ110  
2EZ120  
2EZ130  
2EZ140  
2EZ150  
2EZ160  
2EZ170  
2EZ180  
2EZ190  
2EZ200  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
19.0  
20.0  
22.0  
24.0  
27.0  
30.0  
33.0  
36.0  
39.0  
43.0  
47.0  
51.0  
56.0  
62.0  
68.0  
75.0  
82.0  
91.0  
100.0  
110.0  
120.0  
130.0  
140.0  
150.0  
160.0  
170.0  
180.0  
190.0  
200.0  
45.5  
41.5  
38.5  
35.7  
33.4  
31.2  
29.4  
27.8  
26.3  
25.0  
22.8  
20.8  
18.5  
16.6  
15.1  
13.9  
12.8  
11.6  
10.6  
9.8  
9.0  
8.1  
7.4  
6.7  
6.1  
5.5  
5.0  
4.5  
4.2  
3.8  
3.6  
3.3  
3.1  
2.9  
2.8  
2.6  
4.0  
4.5  
5.0  
5.5  
7.0  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
750  
750  
750  
1000  
1000  
1000  
1000  
1500  
1500  
1500  
2000  
2000  
2000  
2000  
3000  
3000  
3000  
4000  
4500  
5000  
5500  
6000  
6500  
7000  
7000  
8000  
8000  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
1.0  
1.0  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
8.4  
9.1  
9.9  
166  
152  
138  
130  
122  
114  
107  
100  
95  
90  
82  
76  
68  
60  
55  
50  
47  
43  
39  
36  
32  
29  
27  
24  
22  
20  
18  
17  
15  
14  
13  
12  
11  
1.82  
1.66  
1.54  
1.43  
1.33  
1.25  
1.18  
1.11  
1.05  
1.00  
0.91  
0.83  
0.74  
0.67  
0.61  
0.56  
0.51  
0.45  
0.42  
0.39  
0.36  
0.32  
0.29  
0.27  
0.24  
0.22  
0.20  
0.18  
0.16  
0.15  
0.14  
0.13  
0.12  
0.12  
0.11  
0.10  
0.10  
10.6  
11.4  
12.2  
13.0  
13.7  
14.4  
15.2  
16.7  
18.2  
20.6  
22.5  
25.1  
27.4  
29.7  
32.7  
35.8  
38.8  
42.6  
47.1  
51.7  
56.0  
62.2  
69.2  
76.0  
83.6  
91.2  
98.8  
106.4  
114.0  
121.6  
130.4  
136.8  
144.8  
152.0  
8.0  
9.0  
10.0  
11.0  
11.0  
12.0  
13.0  
18.0  
20.0  
23.0  
25.0  
30.0  
35.0  
40.0  
48.0  
55.0  
60.0  
75.0  
90.0  
100.0  
125.0  
175.0  
250.0  
325.0  
400.0  
500.0  
575.0  
650.0  
675.0  
725.0  
825.0  
900.0  
11  
10  
10  
9
2.5  
NOTES:  
1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.  
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms ¡ Ó 10ms  
¢J ¡ Ï ¢J ¢J  
from the diode body, and an ambient temperature of 25  
(
68 , -2 ).  
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,  
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is  
superimposed on IZT or IZK.  
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is  
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse  
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual  
device capability is as described in Figure 3.  
RATING AND CHARACTERISTICS CURVES  
2EZ11 THRU 2EZ200  
30  
D = 0.5  
20  
10  
0.2  
0.1  
7
5
3
2
0.05  
0.02  
NOTE BELOW 0.1 SECOND,  
THERMAL RESPONSE  
CURVE IS APPLICABLE TO  
ANY LEAD LENGTH (L)  
1
0.7  
0.5  
SINGLE PULSE TJL = JL(t)PPK  
£G £K  
REPETITIVE PULSES TJL =  
£G  
JL(t,D)PPK  
£K  
0.01  
D = 0  
0.3  
0.0001 0.0002  
0.0005 0.001 0.002  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
Fig. 2-TYPICAL THERMAL RESPONSE L,  
500  
250  
150  
100  
RECTANGULAR NONREPETITIVE  
WAVEFORM TJ = 25 PRIOR TO  
¢J  
0.1  
INITIAL PULSE  
0.05  
0.03  
0.02  
50  
0.01  
30  
20  
0.005  
0.003  
0.002  
0.001  
10  
0.0005  
0.0003  
0.0002  
0.0001  
.1  
.2 .3  
5
1
2 3 5  
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
200  
500  
1K  
P.W. PULSE WIDTH (ms)  
NOMINAL VZ (VOLTS)  
Fig. 3-MAXIMUM SURGE POWER  
Fig. 4-TYPICAL REVERSE LEAKAGE  
8
6
200  
100  
4
2
RANGE  
50  
40  
30  
RANGE  
0
-2  
-4  
20  
3
4
6
8
10  
12  
10  
0
20  
40  
60  
80 100 120 140 160 180 200  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
Fig. 5-UNITS TO 12 VOLTS  
Fig. 6-UNITS 10 TO 200 VOLTS  
RATING AND CHARACTERISTICS CURVES  
2EZ11 THRU 2EZ200  
100  
100  
50  
30  
20  
10  
50  
30  
20  
10  
5
3
2
5
3
2
1
1
0.5  
0.3  
0.2  
0.5  
0.3  
0.2  
0.1  
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
10 20 30 40 50 60 70 80 90 100  
VZ, ZENER VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
Fig. 7-VZ = 3.9 THRU 10 VOLTS  
Fig. 8-VZ = 12 THRU 82 VOLTS  
100  
50  
30  
20  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
PRIMARY PATH OF  
CONDUCTION IS THROUGH  
THE CATHODE LEAD  
5
3
2
1
0.5  
0.3  
0.2  
0.1  
0
1/8  
1/4  
3/8  
1/2  
5/8  
3/4  
7/8  
1
100  
120  
140  
160  
180  
200  
L, LEAD LENGTH TO HEAT SINK (INCH)  
VZ, ZENER VOLTAGE (VOLTS)  
Fig. 9-VZ = 100 THRU 200 VOLTS  
Fig. 10-TYPICAL THERMAL RESISTANCE  
APPLICATION NOTE:  
£GTJL is the increase in junction temperature above the  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
£GTJL = £c LAPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ (£GTJL ) may be estimated.  
Lead Temperature, TL, should be determined from:  
TL = £c LAPD + TA  
Changes in voltage, Vz, can then be found from:  
£c LA is the lead-to-ambient thermal resistance (¢J/W)  
and PD is the power dissipation. The value for £c LA will  
£GV = £c VZ £GTJ  
£c VZ , the zener voltage temperature coefficient, is  
vary and depends on the device mounting method.  
found from Figures 5 and 6.  
£c LA is generally 30-40 ¢J/W for the various chips and  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
excursions as low as possible.  
tie points in common use and for printed circuit board  
wiring.  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible to  
the tie point. The thermal mass connected to the tie point  
is normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result  
of pulsed operation once steady-state conditions are  
achieved. Using the measured value of TL, the junction  
temperature may be determined by:  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure 3 be  
exceeded.  
£G  
TJ = TL +  
TJL  

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