1SMB2EZ15 [PANJIT]
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts); 表面贴装硅稳压二极管（电压 - 11至200伏电源 - 2.0瓦特）
| 型号： | 1SMB2EZ15 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SMB2EZ11 THRU 1SMB2EZ200
SURFACE MOUNT SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 2.0 Watts
FEATURES
DO-214AA
l
l
l
l
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
l
l
Excellent clamping capability
£g
Typical ID less than 1 A above 11V
l
High temperature soldering :
¢J
260 /10 seconds at terminals
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-214AA, Molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Color band denotes positive end (cathode)
except Brdirectional
Standard Packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
¢J
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL
PD
VALUE
UNITS
Watts
Peak Pulse Power Dissipation (Note A)
2
¢J
24
¢J
Derate above 75
mW/
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
IFSM
15
Amps
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
¢J
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
1SMB2EZ11 THRU 1SMB2EZ200
¢J
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2 V max , IF=500 mA for all types
Type No.
(Note 1.)
Nominal
Zener
Voltage Vz
@ IZT volts
(Note 2.)
11.0
Test
current IZT
mA
Maximum Zener Surge Current
Maximum Zener Impedance (Note 3.)
Leakage Current
Current
IZM
mA
¢J
@ TA = 25
ir - mA
ZZT @ IZT
Ohms
ZZk @ IZK
Ohms
IZK
IR
VR
(Note 4.)
£g
A Max
mA
@
Volts
1SMB2EZ11
1SMB2EZ12
1SMB2EZ13
1SMB2EZ14
1SMB2EZ15
1SMB2EZ16
1SMB2EZ17
1SMB2EZ18
1SMB2EZ19
1SMB2EZ20
1SMB2EZ22
1SMB2EZ24
1SMB2EZ27
1SMB2EZ30
1SMB2EZ33
1SMB2EZ36
1SMB2EZ39
1SMB2EZ43
1SMB2EZ47
1SMB2EZ51
1SMB2EZ56
1SMB2EZ62
1SMB2EZ68
1SMB2EZ75
1SMB2EZ82
1SMB2EZ91
1SMB2EZ100
1SMB2EZ110
1SMB2EZ120
1SMB2EZ130
1SMB2EZ140
1SMB2EZ150
1SMB2EZ160
1SMB2EZ170
1SMB2EZ180
1SMB2EZ190
1SMB2EZ200
45.5
41.5
38.5
35.7
33.4
31.2
29.4
27.8
26.3
25.0
22.8
20.8
18.5
16.6
15.1
13.9
12.8
11.6
10.6
9.8
9.0
8.1
7.4
6.7
6.1
5.5
5.0
4.5
4.2
3.8
3.6
3.3
3.1
2.9
2.8
2.6
4.0
4.5
5.0
5.5
7.0
700
700
700
700
700
700
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
5500
6000
6500
7000
7000
8000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
166
152
138
130
122
114
107
100
95
90
82
76
68
60
55
50
47
43
39
36
32
29
27
24
22
20
18
17
15
14
13
12
11
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
0.18
0.16
0.15
0.14
0.13
0.12
0.12
0.11
0.10
0.10
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
43.0
47.0
51.0
56.0
62.0
68.0
75.0
82.0
10.6
11.4
12.2
13.0
13.7
14.4
15.2
16.7
18.2
20.6
22.5
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
106.4
114.0
121.6
130.4
136.8
144.8
152.0
8.0
9.0
10.0
11.0
11.0
12.0
13.0
18.0
20.0
23.0
25.0
30.0
35.0
40.0
48.0
55.0
60.0
75.0
90.0
100.0
125.0
175.0
250.0
325.0
400.0
500.0
575.0
650.0
675.0
725.0
825.0
900.0
91.0
100.0
110.0
120.0
130.0
140.0
150.0
160.0
170.0
180.0
190.0
200.0
11
10
10
9
2.5
NOTES:
1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms ¡ Ó 10ms
from the diode body, and an ambient temperature of 25 ¢J (¡ Ï 8 ¢J, -2 ¢J).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is
superimposed on IZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.
RATING AND CHARACTERISTICS CURVES
1SMB2EZ11 THRU 1SMB2EZ200
30
D = 0.5
20
10
0.2
0.1
7
5
3
2
0.05
0.02
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
1
0.7
0.5
SINGLE PULSE
TJL =
£G
JL(t)PPK
£K
REPETITIVE PULSES
TJL =
£G
JL(t,D)PPK
£K
0.01
D = 0
0.3
0.0001 0.0002
0.0005 0.001 0.002
0.005
0.01
0.02
0.05
0.1 0.2 0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
500
250
150
100
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25
INITIAL PULSE
PRIOR TO
¢J
0.1
0.05
0.03
0.02
50
0.01
30
20
0.005
0.003
0.002
0.001
10
0.0005
0.0003
0.0002
0.0001
.1
.2 .3
5
1
2 3 5
10
20
50
100
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
200
100
4
2
RANGE
50
40
30
RANGE
0
-2
-4
20
3
4
6
8
10
12
10
0
20
40
60
80 100 120 140 160 180 200
VZ, ZENER VOLTAGE @IZT (VOLTS)
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5-UNITS TO 12 VOLTS
Fig. 6-UNITS 10 TO 200 VOLTS
RATING AND CHARACTERISTICS CURVES
1SMB2EZ11 THRU 1SMB2EZ200
100
100
50
30
20
10
50
30
20
10
5
3
2
5
3
2
1
1
0.5
0.3
0.2
0.5
0.3
0.2
0.1
0
0.1
0
1
2
3
4
5
6
7
8
9
10
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 7-VZ = 3.9 THRU 10 VOLTS
Fig. 8-VZ = 12 THRU 82 VOLTS
100
50
30
20
80
70
60
50
40
30
20
10
0
10
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
5
3
2
1
0.5
0.3
0.2
0.1
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
100
120
140
160
180
200
L, LEAD LENGTH TO HEAT SINK (INCH)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 9-VZ = 100 THRU 200 VOLTS
Fig. 10-TYPICAL THERMAL RESISTANCE
APPLICATION NOTE:
£GTJL is the increase in junction temperature above the
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
£GTJL = £c LAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (£GTJL ) may be estimated.
Lead Temperature, TL, should be determined from:
TL = £c LAPD + TA
Changes in voltage, Vz, can then be found from:
£c LA is the lead-to-ambient thermal resistance (¢J/W)
and PD is the power dissipation. The value for £c LA will
£GV = £c VZ £GTJ
£c VZ , the zener voltage temperature coefficient, is
vary and depends on the device mounting method.
found from Figures 5 and 6.
£c LA is generally 30-40 ¢J/W for the various chips and
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
£G
TJ = TL +
TJL
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