XP2501 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | XP2501 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP2501
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
2.1±0.1
1.25±0.1
0.425
0.425
Features
■
5
1
●
Two elements incorporated into one package.
(Base-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2
3
4
●
Basic Part Number of Element
2SD601A × 2 elements
■
●
0.2±0.1
Absolute Maximum Ratings (Ta=25˚C)
1 : Emitter (Tr1)
2 : Base
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
S–Mini Type Package (5–pin)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
60
50
7
V
Rating
of
element
Marking Symbol: 5W
Internal Connection
V
100
mA
mA
mW
˚C
ICP
200
Tr1
1
5
4
PT
150
Overall Junction temperature
Storage temperature
Tj
150
2
Tstg
–55 to +150
˚C
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
60
50
7
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = 10µA, IE = 0
VCEO
VEBO
ICBO
ICEO
hFE
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
V
V
0.1
100
460
µA
µA
Collector cutoff current
Forward current transfer ratio
160
0.5
Forward current transfer hFE ratio
hFE (small/large)*1 VCE = 10V, IC = 2mA
0.99
0.1
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
0.3
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
150
3.5
Collector output capacitance
*1 Ratio between 2 elements
Cob
1
Composite Transistors
XP2501
PT — Ta
IC — VCE
IB — VBE
250
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
200
150
100
50
140µA
120µA
100µA
80µA
60µA
40µA
20µA
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
IC — VBE
IC — IB
VCE(sat) — IC
240
200
160
120
80
240
200
160
120
80
100
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
3
1
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
Ta=75˚C
40
40
–25˚C
0.03
0.01
0
0
0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
800
1000
0.1 0.3
1
3
10
30
100
(
V
)
Base to emitter voltage VBE
(
)
(
)
Base current IB µA
Collector current IC mA
hFE — IC
fT — IE
NV — IC
300
240
180
120
60
240
200
160
120
80
600
500
400
300
200
100
0
VCE=10V
VCB=10V
Ta=25˚C
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
Ta=75˚C
25˚C
Rg=100kΩ
–25˚C
22kΩ
4.7kΩ
40
0
0
10
–0.1 –0.3
–1
–3
–10 –30 –100
20 30 50 100 200300500 1000
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC µA
Emitter current IE mA
Collector current IC mA
2
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