XN611FH [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XN611FH |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN611FH
Silicon PNP epitaxial planer transistor
Unit: mm
2.8+–00..32
For switching/digital circuits
0.65±0.15
1.5+–00..0255
0.65±0.15
1
2
6
Features
■
5
4
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
3
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN111F+UN111H
■
0.1 to 0.3
●
0.4±0.2
[Tr1]
[Tr2]
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Absolute Maximum Ratings (Ta=25˚C)
■
Mini Type Package (6–pin)
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Marking Symbol: 4S
Internal Connection
Tr1
Tr2
–50
V
–100
–50
mA
V
VCBO
VCEO
IC
Tr1
6
1
2
3
–50
V
–100
300
mA
mW
˚C
5
PT
4
Tr2
Overall Junction temperature
Storage temperature
Tj
150
Tstg
–55 to +150
˚C
1
Composite Transistors
XN611FH
Electrical Characteristics (Ta=25˚C)
Tr1
■
●
Parameter
Symbol
VCBO
Conditions
IC = –10µA, IE = 0
min
–50
–50
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = –2mA, IB = 0
V
VCB = –50V, IE = 0
– 0.1
– 0.5
–1.0
µA
µA
mA
Collector cutoff current
VCE = –50V, IB = 0
Emitter cutoff current
VEB = –6V, IC = 0
Forward current transfer ratio
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
30
Collector to emitter saturation voltage VCE(sat)
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
–4.9
V
80
4.7
MHz
kΩ
R1
–30%
+30%
Resistance ratio
R1/R2
0.47
●
Tr2
Parameter
Symbol
Conditions
IC = –10µA, IE = 0
min
–50
–50
typ
max
Unit
V
Collector to base voltage
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
Collector to emitter voltage
IC = –2mA, IB = 0
V
VCB = –50V, IE = 0
– 0.1
– 0.5
– 0.5
µA
µA
mA
Collector cutoff current
VCE = –50V, IB = 0
Emitter cutoff current
VEB = –6V, IC = 0
Forward current transfer ratio
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
30
Collector to emitter saturation voltage VCE(sat)
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
–4.9
V
80
2.2
MHz
kΩ
R1
–30%
0.17
+30%
0.27
Resistance ratio
R1/R2
0.22
2
Composite Transistors
XN611FH
Common characteristics chart
PT — Ta
500
400
300
200
100
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
Characteristics charts of Tr1
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
3
Composite Transistors
XN611FH
Characteristics charts of Tr2
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–100
–80
–60
–40
–20
0
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to emitter voltage VCE
(
)
( )
Collector current IC mA
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
f=1MHz
IE=0
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
(
)
Output current IO mA
4
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