UNR9210G [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN;
| 型号： | UNR9210G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总20页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
Package
•
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Cde
SSMini3-F
•
• SS-Mini type package, allowing automatic insertion through ape
packing.
Pin Na
1: Base
2ter
llecor
■ Resistance by Part Number
Marking Symbol (R1)
)
■ Internal Connection
• UNR9210G
• UNR9211G
• UNR9212G
• UNR9213G
• UNR9214G
• UNR9215G
• UNR9216G
• UNR9217G
• UNR9218G
• UNR9219
• UNR921AG
• UNR921
• UNR9
• UNR9G
UN921EG
• UNR921FG
• UNR9
• U
• U
• UNR
• UNR921
• UNR921VG
8L
8A
8B
8C
8F
47 kΩ
10 kΩ
22 kΩ
7 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 k
Ω
0 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
R1
C
E
B
R2
H
8I
8K
8X
8Y
8Z
M
8N
O
8P
Ω
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
8Q
EL
EX
EZ
FD
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
100
mA
mW
°C
125
Total power dissipation
Junction temperature
Storage temperature
Tj
125
Tstg
−55 to +125
°C
Publication date: July 2008
SJH00241BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cut-off current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter- UNR9210G/9215G/
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
µA
µA
mA
ICEO
IEBO
0.01
9216G/9217G/921BG
base
cut-off
current
UNR9213G/921AG
0.1
0.2
UNR9212G/9214G/921DG/
(Collector 921EG/921MG/921NG/921TG
open)
UNR9211G
0.5
1.0
1.5
2.0
20
UNR921FG/921KG
UNR9219G
UNR9218G/921CG/921LG/921VG
Forward UNR921VG
hFE
VCE = 10 V, IC = 5 mA
6
current
transfer
ratio
UNR9218G/921KG/921LG
20
30
35
60
80
UNR9219G/921DG/921FG
UNR9211G
UNR9212G/921EG
UNR9213G/9214G/
921AG/921CG/921MG
UNR921NG/921TG
80
400
460
UNR9210G/9215G/
9216G/9217G/921BG
160
Collector-emitter saturation voltage
UNR921VG
VCE(sat)
IC = 10 mA, IB = 0.3 mA
0.25
V
IC = 10 mA, IB = 1.5 mA
Output voltage high-level
Output voltage low-level
UNR9213G/921BG/921KG
UNR921DG
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCC = 5 V, VB = 5 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
4.9
V
V
0.2
UNR921EG
UNR921AG
Transition frequency
fT
150
MHz
Input
resistance UNR9219G
UNR921MG/921VG
UNR9218G
R1
−30% 0.51 +30%
kΩ
1
2.2
4.7
10
UNR9216G/921FG/921LG/921NG
UNR9211G/9214G/9215G/921KG
UNR9212G/9217G/921TG
UNR9210G/9213G/921DG/921EG
UNR921AG/921BG
22
47
100
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SJH00241BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Symbol
R2
Conditions
Min
Typ
47
Max
Unit
kΩ
Emitter-base resistance UNR921CG
Rasistance UNR921MG
−30%
+30%
R1/R2
0.047
0.1
ratio
UNR921NG
UNR9218G/9219G
UNR9214G
0.08
0.17
0.10
0.21
0.47
0.47
1.0
0.12
0.25
UNR921TG
UNR921FG
0.37
0.57
UNR921AG/921VG
UNR9211G/9212G/9213G/921LG
UNR921KG
0.8
1.70
1.70
3.7
1.0
1.2
2.60
2.60
5.7
2.13
2.14
4.7
UNR921EG
UNR921DG
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR9210G
IC VCE
VCE(sat) IC
hFE IC
102
10
60
400
300
200
100
0
IB = 1.0 mA
Ta = 25°C
IC / IB = 10
VCE = 10 V
0.9 mA
0.8 mA
50
40
Ta = 75°C
0.4 mA
0.5 mA
25°C
30
20
10
0
0.3 mA
0.6 mA
1
0.7 mA
Ta = 75°C
−25°C
0.1 mA
25°C
10 −1
−25°C
10 −2
10 −1
1
10
102
0
2
4
6
8
10
12
1
10
102
103
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
SJH00241BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
0
102
10 −1
1
10
102
1
10
0.4
0.6
( )
Input voltage VIN V
0.8
1.0
1.2
1.4
(
)
Output current IO mA
(
)
V
Collector-base voltage VCB
Characteristics charts of UNR9211G
IC VCE
VCE(sat) IC
hFE IC
160
102
10
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
1
25°C
25°C
Ta = 75°C
0.2 mA
−25°C
40
10 −1
−25˚C
0.1 mA
0
10 −2
10 −1
0
2
4
6
8
10
12
1
10
102
1
10
102
103
(
)
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
102
10
104
103
102
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
1
0.4
10 −1
1
10
102
1
10
102
0.6
0.8
1.0
1.2
)
1.4
(
)
V
(
)
(
Collector-base voltage VCB
Output current IO mA
Input voltage VIN
V
SJH00241BED
4
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9212G
IC VCE
VCE(sat) IC
hFE IC
102
10
400
300
200
100
0
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
120
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
1
80
0.3 mA
25°C
25°C
Ta = 75°C
−25°C
0.2 mA
10 −1
40
−25°C
0.1 mA
10 −2
10 −1
0
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
104
103
102
10
1
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
10
1
10 −1
10 −2
10 −1
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
(
)
Collector-base voltage VCB
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9213G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
120
0.6 mA
0.5 mA
0.4 mA
−25°C
80
1
0.3 mA
Ta = 75°C
25°C
0.2 mA
10 −1
40
−25°C
0.1 mA
10 −2
10 −1
0
102
103
1
10
102
0
2
4
6
8
10
12
1
10
(
)
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
SJH00241BED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0
10 −2
10 −1
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
(
)
Collector-base voltage VCB
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9214G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
1
25°C
Ta = 75°C
−25°C
25°C
10 −2
0.2 mA
0.1 mA
−25°C
10 −1
10 −1
103
1
10
102
0
2
4
6
8
10
12
1
10
102
(
)
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
Collector-base voltage VCB
V
(
)
Output current IO mA
(
)
V
Input voltage VIN
SJH00241BED
6
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9215G
IC VCE
VCE(sat) IC
hFE IC
102
10
400
300
200
100
0
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
1
25°C
0.3 mA
−25°C
Ta = 75°C
0.2 mA
0.1 mA
25°C
10 −1
−25°C
10 −2
10 −1
102
103
1
10
102
1
10
0
2
4
6
8
10
12
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
10 −1
1
10
102
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
(
)
V
Collector-base voltage VCB
(
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR9216G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
Ta = 75°C
25°C
0.9 mA
120
300
200
100
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
0.3 mA
80
40
0
1
Ta = 75°C
0.2 mA
25°C
10 −1
0.1 mA
10
−25°C
10 −2
10 −1
102
103
1
10
102
0
2
4
6
8
12
1
10
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
(
)
Collector current IC mA
SJH00241BED
7
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
(
)
V
Collector-base voltage VCB
(
)
(
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR9217G
IC VCE
VCE(sat) IC
hFE IC
120
102
10
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
60
1
Ta = 75°C
Ta = 75°C
25°C
40
25°C
−25°C
10 −1
20
0
0.1 mA
10
−25°C
10 −2
10 −1
0
2
4
6
8
12
1
10
102
1
10
102
103
(
)
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
0
10 −2
10 − −1
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
1
10
102
(
)
V
Collector-base voltage VCB
(
)
V
(
)
Input voltage VIN
Output current IO mA
SJH00241BED
8
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9218G
IC VCE
VCE(sat) IC
hFE IC
102
10
240
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
160
0.8 mA
0.7 mA
Ta = 75°C
1
120
Ta = 75°C
0.6 mA
0.5 mA
25°C
−25°C
80
40
0
0.4 mA
25°C
10 −1
0.3 mA
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
102
10
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
VO = 0.2 V
Ta = 25°C
Ta = 25°C
1
10 −1
10 −2
10 −1
Collector-base voltage VCB
1
10
102
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
(
)
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9219G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
40
0
240
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
80
40
0
Ta = 75°C
1
25°C
−25°C
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
25°C
10 −1
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
)
V
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
Collector current IC mA
SJH00241BED
9
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
102
10
104
103
102
10
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
1
10 −1
10 −2
0
10 −1
1
10
102
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
(
)
V
(
)
V
Output current IO mA
Input voltage VIN
Collector-base voltage VCB
Characteristics charts of UNR921AG
IC VCE
VCE(sat) IC
hFE IC
1
IC / IB = 10
Ta = 25°C
VCE = 10 V
Ta = 75°C
IB = 0.5 mA
400
120
0.4 mA
25°C
300
200
100
0
0.3 mA
−25°C
80
10 −1
0.2 mA
Ta = 75°C
25°C
40
0.1 mA
−25°C
10 −2
0
10 −1
1
10
102
103
10 −1
1
10
102
0
2
4
6
8
10
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
10
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
1
10
10 −1
10 −2
1
1
0
10
20
1
10
)
Output current IO mA
102
0
1
2
3
(
)
( )
Input voltage VIN V
(
Collector-base voltage VCB
V
SJH00241BED
10
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921BG
IC VCE
VCE(sat) IC
hFE IC
120
10
Ta = 25°C
IC / IB = 10
VCE = 10 V
400
300
200
100
0
IB = 0.5 mA
Ta = 75°C
100
0.4 mA
25°C
1
80
0.3 mA
−25°C
60
0.2 mA
10 −1
40
25°C
Ta = 75°C
0.1 mA
20
−25°C
10 −2
10 −1
0
102
103
1
10
102
0
2
4
6
8
10
1
10
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
10
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
1
1
10 −1
1
10 −1
10 −1
1
10
102
0
10
20
30
40
0.4
0.8
1.2
1.6
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR921CG
IC VCE
VCE(sat) IC
hFE IC
1
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
300
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Ta = 75°C
25°C
200
100
0
80
−25°C
0.3 mA
10 −1
Ta = 75°C
25°C
0.2 mA
40
−25°C
0.1 mA
10 −2
0
102
103
1
10
102
1
10
0
2
4
6
8
10
(
)
Collector current IC mA
(
)
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
SJH00241BED
11
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
1
10
102
VO = 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VO = 5 V
Ta = 25°C
10
1
1
10 −1
10 −1
1
10
102
0
10
20
30
40
0
0.4
0.8
(
)
(
)
V
Output current IO mA
Collector-base voltage VCB
(
)
V
Input voltage VIN
Characteristics charts of UNR921DG
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
40
0
30
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA 0.5 mA
25°C
−25°C
0.4 mA
0.7 mA
25
20
15
10
5
0.3 mA
0.6 mA
IB = 1.0 mA
1
0.2 mA
0.1 mA
Ta = 75°C
25°C
10 −1
−25°C
10 −2
10 −1
0
102
103
1
10
102
1
10
0
2
4
6
8
10
12
(
)
Collector current IC mA
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
6
104
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
5
4
3
2
1
103
102
10
1
1
10 −1
10 −2
0
10 −1
1
10
102
10 −1
1
10
102
1.5
2.0
2.5
3.0
3.5
4.0
(
)
(
)
Collector-base voltage VCB
V
Output current IO mA
(
)
V
Input voltage VIN
SJH00241BED
12
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921EG
IC VCE
VCE(sat) IC
hFE IC
60
102
10
160
120
80
IB = 1.0 mA
0.7 mA
Ta = 25°C
IC / IB = 10
0.9 mA
0.6 mA
VCE = 10 V
0.8 mA
50
Ta = 75°C
40
25°C
−25°C
0.2 mA
0.3 mA
0.4 mA
30
0.5 mA
1
Ta = 75°C
0.1 mA
20
25°C
10 −1
40
10
0
−25°C
10 −2
10 −1
0
102
103
0
2
4
6
8
10
12
1
10
102
1
10
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
f = 1MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
5
4
3
2
1
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
1.5
2.0
2.5
3.0
3.5
4.0
1
10
102
(
)
V
Collector-base voltage VCB
(
)
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR921FG
IC VCE
VCE(sat) IC
hFE IC
240
102
10
160
120
80
Ta = 25°C
IC / IB = 10
VCE = 10 V
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
IB = 1.0 mA
25°C
−25°C
0.5 mA
0.4 mA
0.3 mA
25°C
10 −1
40
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
0
0
2
4
6
8
10
12
1
10
102
1
10
Collector current IC mA
102
103
(
)
V
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
SJH00241BED
13
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
104
103
102
10
1
102
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
f = 1 MHz
IE = 0
T
a
= 25°C
Ta = 25°C
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
102
(
)
V
(
(
)
Collector-base voltage VCB
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR921KG
IC VCE
VCE(sat) IC
hFE IC
102
10
240
200
160
120
80
240
VCE = 10 V
IC / IB = 10
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
1
120
1.0 mA
0.8 mA
Ta = 75°C
−25°C
80
0.6 mA
25°C
−25°C
10 −1
0.4 mA
0.2 mA
10 12
40
40
10 −2
0
0
102
103
1
10
102
103
1
10
0
2
4
6
8
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
VIN IO
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
102
1
10
102
10 −1
1
10
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
SJH00241BED
14
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921LG
IC VCE
VCE(sat) IC
hFE IC
102
10
240
240
200
160
120
80
VCE = 10 V
Ta = 25°C
IC / IB = 10
200
Ta = 75°C
160
IB = 1.0 mA
25°C
0.8 mA
1
120
0.6 mA
−25°C
Ta = 75°C
25°C
80
0.4 mA
10 −1
40
40
−25°C
0.2 mA
10 −2
0
0
102
103
1
10
102
103
0
2
4
6
8
10
12
1
10
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
VIN IO
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
102
1
10
102
10 −1
1
10
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR921MG
IC VCE
VCE(sat) IC
hFE IC
10
1
240
500
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
200
160
120
80
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
25°C
25°C
10 −1
0.5 mA
0.4 mA
0.3 mA
−25°C
−25˚C
0.2 mA
10 −2
40
0.1 mA
0
10 −3
0
2
4
6
8
10
12
1
10
102
103
1
10
102
103
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00241BED
15
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
5
4
3
2
1
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
102
(
(
)
Input voltage VIN
V
Collector-base voltage VCB
V
(
)
Output current IO mA
Characteristics charts of UNR921NG
IC VCE
VCE(sat) IC
hFE IC
10
160
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
120
80
40
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
1
0.4 mA
25°C
0.3 mA
Ta = 75°C
25°C
−25°C
0.2 mA
0.1 mA
10 −1
−25°C
10 −2
0
103
1
10
102
103
0
2
4
6
8
10
12
1
10
102
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
1
1
10
102
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
(
)
Collector-base voltage VCB
(
)
V
Output current IO mA
Input voltage VIN
SJH00241BED
16
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921TG
IC VCE
VCE(sat) IC
hFE IC
VCE = 10 V
Ta = 75°C
103
160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
25°C
Ta = 75°C
0.5 mA
0.4 mA
102
80
0.3 mA
−25°C
25°C
−25°C
0.2 mA
40
0.1 mA
0
10
1
10
102
10 −1
1
10
102
0
2
4
6
8
10
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
102
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
10
1
10
10 −1
1
10 −2
10 −3
10 −1
0.75
10 −3 10 −2
10 −1
1
10
102
1
10
102
0.25
1.25
(
)
Collector-base voltage VCB
V
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR921VG
IC VCE
VCE(sat) IC
hFE IC
10
160
240
200
160
120
80
VCE = 10 V
IC / IB = 10
Ta = 25°C
120
80
40
0
IB = 1.0 mA
1
10 −1
10 −2
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
0.6 mA
Ta = 75°C
25°C
0.5 mA
0.4 mA
−25°C
−25°C
40
0.3 mA
0.2 mA
0
103
4
6
8
10
1
10
102
103
0
2
10
12
1
102
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
SJH00241BED
17
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
6
5
4
3
2
1
0
104
103
102
10
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
1
10 −1
10 −2
102
1
10
102
10 −1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
(
)
V
Input voltage VIN
SJH00241BED
18
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
SJH00241BED
19
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
相关型号：
UNR9211G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC
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