UNR6115R [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN;
| 型号： | UNR6115R |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN 开关 晶体管 |
| 文件： | 总14页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/
6110/611D/611E/611F/611H/611L)
Unit: mm
6.9±±.1
2.5±±.1
(±.8)
Silicon PNP epitaxial planer transistor
(±.7)
(4.±)
For digital circuits
±.65 ma
Features
I
G
Costs can be reduced through downsizing of thequiment and
reduction of the number of parts.
G
MT-1 type package, allowing supply with the taping.
+±.1±
+±.1±
±.45
±.45
–±.±5
–±.±5
1.±5±±.±5
2.5±±.5
Resistance by Part Nur
I
2.5±±.5
(R1
0kΩ
22Ω
7kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
4kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47k
47kΩ
1 : Emitter
2 : Collector
3 : Base
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR6111
UNR6112
UNR6113
UNR6114
UNR6115
UNR616
UNR6
UNR
NR6119
UNR6110
UNR611D
UN
U
UNR
1
2
3
MT-1-A1 Package
Internal Connection
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
400
Tj
150
Tstg
–55 to +150
˚C
Note) The Part numbers in the Parenthesis show conventional part number.
1
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
Collector cutoff current
ICEO
µA
UNR6111
UNR6112/6114/611E/611D
UNR6113
Emitter
cutoff
current
UNR6115/6116/6117/6110 IEBO
UNR611F/611H
VEB = –6V, IC = 0
mA
UNR6119
–1.5
UNR6118/611L
–2.0
Collector to base voltage
Collector to emitter voltage
UNR6111
VCBO
VCEO
IC = –10µA, IE = 0
–50
–50
35
V
V
IC = –2mA, IB = 0
UNR6112/611E
Forward
current
60
UNR6113/6114
80
hFE
VCE = –10V, IC = –5mA
transfer
ratio
UNR6115*/6116*/6117*/6110*
UNR611F/611D/6119/611H
UNR6118/611L
160
30
460
20
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
V
Output voltage high level
Output voltage low level
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = –5V, VB = –6V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
UNR6113
UNR611D
UNR611E
V
Transition frequency
80
10
MHz
UNR6111/6114/6115
UNR6112/6117
22
UNR6113/6110/611D/611E
UNR6116/611F/611L
UNR6118
47
Input
resis-
tance
R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UNR6119
UNR611H
2.2
1.0
0.21
0.1
4.7
2.14
0.47
0.22
UNR6111/6112/6113/611L
UNR6114
0.8
0.17
0.08
3.7
1.2
0.25
0.12
5.7
UNR6118/6119
UNR611D
Resis-
tance
ratio
R1/R2
UNR611E
1.7
2.6
UNR611F
0.37
0.17
0.57
0.27
UNR611H
* hFE rank classification (UNR6115/6116/6117/6110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Common characteristics chart
PT — Ta
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UNR6111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–0.9mA
IB=–1.0mA
–30
–10
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
40
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector to emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
3
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UNR6112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
V
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
)
( )
Input voltage VIN V
(
)
Output current IO mA
Collector to base voltage VCB
V
Characteristics charts of UNR6113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
)
( )
Collector current IC mA
Collector to emitter voltage VCE
V
4
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR6114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–10
–0.7mA
–0.6mA
–3
–1
Ta=75˚C
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
)
(
)
(
)
V
Collector to base voltage VCB
V
Output current IO mA
Input voltage VIN
5
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UNR6115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
(
)
Output current IO mA
Characteristics charts of UNR6116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–0.9mA
–0.8mA
–10
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
6
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
(
)
(
)
Collector to base voltage VCB
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR6117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
Input voltage VIN
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
7
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UNR6118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
40
–0.03
–0.01
–25˚C
–0.1mA
0
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Collector to base voltage VCB
V
( )
Input voltage VIN V
(
)
Output current IO mA
Characteristics charts of UNR6119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–3
–1
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
40
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
8
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
V
Input voltage VIN
V
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR6110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–30
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
Ta=75˚C
–3
–1
–0.3mA
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
Output current IO mA
(
)
V
Input voltage VIN
V
Collector to base voltage VCB
9
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UNR611D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
IC/IB=10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
40
–0.1mA
–0.03
–0.01
–25˚C
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR611E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
–0.9mA
Ta=25˚C
VCE=–10V
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector to emitter voltage VCE
10
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
(
)
Input voltage VIN
(
)
V
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR611F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
40
–0.03
–0.01
–25˚C
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
)
( )
V
Collector to base voltage VCB
V
Input voltage VIN
11
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UNR611H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Collector to emitter voltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
Characteristics charts of UNR611L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
12
UNR6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
13
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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