UN2227 [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | UN2227 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Unit: mm
Silicon NPN epitaxial planar type
+0.10
0.40
–0.05
+0.10
–0.06
0.16
3
For muting
■ Features
1
2
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
10˚
■ Resistance by Part Number
Marking Symbol (R1)
(R2)
1: Base
2: Emitter
3: Collector
• UNR2225 (UN2225)
• UNR2226 (UN2226)
• UNR2227 (UN2227)
FZ
FY
FW
10 kΩ
4.7 kΩ
6.8 kΩ
EIAJ: SC-59
Mini3-G1 Package
6.8 kΩ
Internal Connection
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
R1
B
C
E
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
20
V
R2
5
600
V
Collector current
IC
PT
mA
mW
°C
°C
200
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
30
20
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current UNR2227
IC = 1 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 1 µA, IC = 0
V
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 100 mA
1
1
µA
µA
IEBO
hFE
70
transfer ratio
UNR2225/2226
100
600
80
Collector-emitter saturation voltage
Input resistance UNR2226
UNR2227
VCE(sat) IC = 50 mA, IB = 2.5 mA
mV
R1
−30%
4.7
6.8
10
+30%
kΩ
UNR2225
Resistance ratio UNR2227
R1/R2
0.8
1.0
1.2
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
1
UNR2225/2226/2227
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Resistance ratio UNR2226
UNR2227
Symbol
Conditions
Min
Typ
0.95
1.1
Max
Unit
Ron
VI = 7 V, RL = 1 kΩ, f = 1 kHz
Ω
UNR2225
1.5
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Refer to Ron measurment circuit
*
RL
R1
f = 1 kHz
V = 0.3 V
R2
V
I
VB VV VA
VB
VA−VB
Ron
=
× RL (Ω)
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR2225
IC VCE
VCE(sat) IC
hFE IC
250
200
150
100
50
400
1000
100
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
300
200
100
0
Ta = 75°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
25°C
Ta = 75°C
−25°C
−25°C
25°C
0.3 mA
0.2 mA
0.1 mA
0
1
102
103
104
0
2.5
5.0
7.5
10.0
1
10
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00040CED
2
UNR2225/2226/2227
Cob VCB
IO VIN
VIN IO
105
104
100
14
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
103
102
10
1
1
5
1
0.1
10−3
10−2 10−1
1
10
102
1
10
100
0.25
0.50
0.75
1.00
1.25
1.50
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2226
IC VCE
VCE(sat) IC
hFE IC
400
1000
100
500
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
300
200
100
0
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
−25°C
25°C
0.5 mA
0.4 mA
−25°C
25°C
10
0.3 mA
0.2 mA
0.1 mA
1
102
103
104
1
10
100
1000
0
2.5
5.0
7.5
10.0
1
10
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
14
10
105
104
100
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
103
102
10
1
1
5
1
0.1
10−3
10−2 10−1
Output current IO (mA)
1
10
102
0.25
0.50
0.75
1.00
1.25
1.50
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
SJH00040CED
3
UNR2225/2226/2227
Characteristics charts of UNR2227
IC VCE
VCE(sat) IC
hFE IC
1000
100
10
400
300
250
IC / IB = 10
Ta = 25°C
VCE = 10 V
Ta = 75°C
300
200
IB = 1.0 mA
200
150
0.9 mA
0.8 mA
25°C
0.7 mA
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
0.3 mA
−25°C
100
50
0
100
0
25°C
−25°C
0.2 mA
0.1 mA
1
10
100
1000
102
103
104
0
2
4
6
10
1
10
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
IO VIN
VIN IO
100
10
20
16
12
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
1
0.1
8
4
1
0.01
0.001
0.1
0
10−3
10−2 10−1
Output current IO (mA)
1
10
102
0.25
0.50
0.75
1.00
1.25
1.50
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
SJH00040CED
4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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