UN212Y [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | UN212Y |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
2.8 +–00..32
Features
■
0.65±0.15
1.5 +–00..0255
0.65±0.15
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
1
2
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
3
Resistance by Part Number
■
Marking Symbol (R1)
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
●
●
●
●
●
●
UN2121
UN2122
UN2123
UN2124
UN212X
UN212Y
7A
7B
7C
7D
7I
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
7Y
4.6kΩ
EIAJ:SC-59
Mini Type Package
3:Collector
Absolute Maximum Ratings (Ta=25˚C)
■
Internal Connection
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
C
E
–50
V
R1
B
–500
mA
mW
˚C
R2
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
–55 to +150
˚C
1
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
Conditions
VCB = –50V, IE = 0
min
typ
max
–1
Unit
Collector cutoff current
ICBO
µA
UN212X ICBO
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VCE = –50V, IB = 0
– 0.1
–1
Collector cutoff current
ICEO
µA
UN212X ICEO
– 0.5
–5
UN2121
Emitter
cutoff
current
UN2122/212X/212Y
IEBO
VEB = –6V, IC = 0
–2
mA
V
UN2123/2124
–1
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
40
50
60
UN2121
Forward
current
transfer
ratio
UN2122/212Y
UN2123/2124
UN212X
hFE
VCE = –10V, IC = –100mA
20
Collector to emitter saturation voltage VCE(sat)
UN212X VCE(sat)
IC = –100mA, IB = –5mA
– 0.25
– 0.25
– 0.15
IC = –10mA, IB = – 0.3mA
V
UN212Y VCE(sat)
IC = –50mA, IB = –5mA
Output voltage high level
Output voltage low level
Transition frequency
UN2121
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 500Ω
VCC = –5V, VB = –3.5V, RL = 500Ω
VCB = –10V, IE = 50mA, f = 200MHz
–4.9
V
V
– 0.2
200
2.2
MHz
UN2122
Input
4.7
UN2123
resis-
R1
(–30%)
0.8
10
(+30%)
1.2
kΩ
tance
UN212X
0.27
3.1
UN212Y
Resistance ratio
UN2124
1.0
0.22
0.054
0.67
R1/R2
UN212X
UN212Y
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
2
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2121
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
Ta=75˚C
–0.3
–0.1
–0.4mA
–0.3mA
25˚C
25˚C
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
–25˚C
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
12
10
8
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–3
–1
–300
–100
6
–0.3
–0.1
–30
–10
4
2
–0.03
–0.01
–3
–1
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
V
)
(
)
( )
V
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
Characteristics charts of UN2122
IC — VCE
VCE(sat) — IC
hFE — IC
–300
–250
–200
–150
–100
–50
–100
160
120
80
40
0
IC/IB=10
Ta=75˚C
25˚C
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–3
–1
–0.8mA
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.3
–0.1
–25˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
3
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Cob — VCB
IO — VIN
VIN — IO
24
20
16
12
8
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
4
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UN2123
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
200
150
100
50
IC/IB=10
Ta=25˚C
Ta=75˚C
VCE=–10V
25˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
–25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–3
–10 –30 –100 –300 –1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
24
20
16
12
8
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
4
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Input voltage VIN V
(
)
(
V
)
Output current IO mA
Collector to base voltage VCB
4
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2124
IC — VCE
VCE(sat) — IC
hFE — IC
–300
–250
–200
–150
–100
–50
400
350
300
250
200
150
100
50
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–3
–1
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
25˚C
–0.5mA
–0.4mA
Ta=75˚C
–25˚C
–0.3
–0.1
25˚C
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
0
–1
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
24
20
16
12
8
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
4
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Input voltage VIN
Output current IO mA
(
V
)
Collector to base voltage VCB
Characteristics charts of UN212X
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
IB=–1.6mA
–1.4mA
–1.2mA
–3
–1
Ta=75˚C
–1.0mA
–0.8mA
25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–25˚C
–0.6mA
–0.4mA
–25˚C
40
–0.03
–0.01
–0.2mA
0
–1
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
5
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Cob — VCB
VIN — IO
24
20
16
12
8
–100
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3
–1
–0.3
–0.1
4
–0.03
–0.01
0
–1
–3
–10
–30
–100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN212Y
IC — VCE
VCE(sat) — IC
hFE — IC
–100
240
200
160
120
80
–240
–200
–160
–120
–80
–40
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
IB=–1.2mA
Ta=75˚C
–1.0mA
–0.8mA
–0.6mA
–3
–1
25˚C
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.4mA
40
–25˚C
–0.03
–0.01
–0.2mA
0
–1
–1
–3
–10 –30 –100 –300 –1000
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
VIN — IO
–100
24
20
16
12
8
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3
–1
–0.3
–0.1
4
–0.03
–0.01
0
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10
–30
–100
( )
Output current IO mA
(
V
)
Collector to base voltage VCB
6
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