UN211ZS [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN;
| 型号： | UN211ZS |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总17页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
Unit: mm
2.8 +–00..32
1.5 +–00..0255
For digital circuits
0.65±0.15
0.65±0.15
Features
■
●
Costs can be reduced through downsizing of the equipment and
1
2
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
3
●
Resistance by Part Number
■
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
UN2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN2117
UN2118
UN2119
UN2110
UN211D
UN211E
UN211F
UN211H
UN211L
UN211M
UN211N
UN211T
UN211V
UN211Z
6A
6B
6C
6D
6E
6F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
EIAJ:SC-59
Mini Type Package
3:Collector
6H
6I
Internal Connection
6K
6L
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
–55 to +150
˚C
1
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
UN2111
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
ICEO
µA
UN2112/2114/211E/211D/211M/211N/211T
UN2113
Emitter
cutoff
current
UN2115/2116/2117/2110
UN211F/211H
UN2119
IEBO
VEB = –6V, IC = 0
mA
–1.5
UN2118/211L/211V
UN211Z
–2.0
– 0.4
Collector to base voltage
Collector to emitter voltage
UN2111
VCBO
VCEO
IC = –10mA, IE = 0
IC = –2mA, IB = 0
–50
–50
35
60
80
160
30
20
80
6
V
V
UN2112/211E
UN2113/2114/211M
Forward
current
transfer
ratio
UN2115*/2116*/2117*/2110*
460
UN2119/211F/211D/211H hFE
UN2118/211L
VCE = –10V, IC = –5mA
UN211N/211T
UN211V
400
20
UN211Z
60
200
Collector to emitter saturation voltage
UN211V
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.25
V
V
V
VCE(sat)
VOH
IC = –10mA, IB = –1.5mA
– 0.07
Output voltage high level
Output voltage low level
UN2113
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = –5V, VB = –6V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
VOL
V
UN211D
UN211E
Transition frequency
UN2111/2114/2115
UN2112/2117/211T
fT
80
10
MHz
22
UN2113/2110/211D/211E
Input
47
resis-
tance
UN2116/211F/211L/211N/211Z R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UN2118
UN2119
UN211H/211M/211V
2.2
* hFE rank classification (UN2115/2116/2117/2110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter
UN2111/2112/2113/211L
UN2114
Symbol
Conditions
min
0.8
typ
1.0
max
1.2
Unit
0.17
0.08
0.21
0.1
0.25
0.12
UN2118/2119
UN211D
4.7
UN211E
2.14
0.47
0.22
0.047
0.1
Resis-
tance
ratio
UN211F/211T
UN211H
R1/R2
0.17
0.27
UN211M
UN211N
UN211V
1.0
UN211Z
0.21
3
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UN2111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
40
0
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
4
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
V
)
( )
Input voltage VIN V
(
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN2113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
V
)
( )
Collector current IC mA
Collector to emitter voltage VCE
5
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN2114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
Ta=75˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
V
)
(
)
(
V
)
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
6
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
(
)
(
V
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
Collector to base voltage VCB
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UN2116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
7
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN2117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Input voltage VIN
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
8
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
( )
Input voltage VIN V
(
)
Output current IO mA
Characteristics charts of UN2119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=75˚C
–3
–1
–0.7mA
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
9
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN2110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–30
–10
Ta=75˚C
–3
–1
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
Output current IO mA
(
V
)
Input voltage VIN
Collector to base voltage VCB
10
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
40
0
IC/IB=10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN211E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
Ta=25˚C
VCE=–10V
–0.9mA
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Collector to emitter voltage VCE
11
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
Input voltage VIN
(
V
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN211F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
12
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Collector to emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN211L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
13
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN211M
IC — VCE
VCE(sat) — IC
hFE — IC
500
400
300
200
100
0
–10
240
IC/IB=10
Ta=25˚C
VCE=–10V
–3
–1
200
160
120
80
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.3
–0.1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.03
–0.01
–25˚C
–0.5mA
–0.4mA
–0.3mA
–25˚C
40
–0.2mA
–0.1mA
–0.003
–0.001
0
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
10–4
10–3
10–2
10–1
1
–100
10
8
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3
–1
6
4
–0.3
–0.1
2
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Output current IO mA
( )
V
(
V
)
Input voltage VIN
Collector to base voltage VCB
14
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211N
IC — VCE
VCE(sat) — IC
hFE — IC
Ta=75˚C
–25˚C
300
250
200
150
100
50
–10
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–1
–0.9mA
–0.8mA
–0.7mA
25˚C
–0.6mA
–0.5mA
Ta=75˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1
–50
–25
0
–25˚C
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–10
–100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN211T
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
–200
–175
–150
–125
–100
–75
–10
IC/IB=10
VCE=–10V
Ta=25˚C
Ta=75˚C
IB=–1.0mA
–1
–0.1
–0.01
–0.9mA
–0.8mA
–0.7mA
–0.6mA
25˚C
Ta=75˚C
25˚C
–25˚C
–0.5mA
–0.4mA
–50
–25
0
–0.3mA
–0.2mA
–25˚C
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
–10
–100
–1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
15
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
V
)
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UN211V
IC — VCE
VCE(sat) — IC
hFE — IC
–10
12
10
8
–12
–10
–8
–6
–4
–2
0
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
Ta=75˚C
25˚C
–0.8mA
–1
–0.7mA
–0.6mA
–0.5mA
Ta=75˚C
–25˚C
6
25˚C
–0.1
4
–0.4mA
–0.3mA
–25˚C
2
–0.2mA
–0.1mA
0
–1
–0.01
–10
–100
–1
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
( )
V
Collector current IC mA
Collector to emitter voltage VCE
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
V
)
(
)
Input voltage VIN
Output current IO mA
16
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211Z
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
–10
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
Ta=75˚C
–25˚C
–1
–0.9mA
–0.8mA
–0.7mA
25˚C
Ta=75˚C
–25˚C
–0.6mA
–0.5mA
–0.1
25˚C
–0.4mA
–0.3mA
–50
–25
0
–0.2mA
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
17
相关型号：
UN2121/2122/2123/2124/212X/212Y
UN2121/2122/2123/2124/212X/212Y - PNP Transistor with built-in Resistor
ETC
UN2121TMG
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC
UN2122TMG
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC
UN2122TSK
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC
UN2123TMG
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC
UN2124TMG
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC
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