MIP713 [PANASONIC]

Silicon MOS IC; 硅MOS IC


型号：	MIP713
厂家：	PANASONIC
描述：	Silicon MOS IC 硅MOS IC
文件：	总3页 (文件大小：67K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Intelligent Power Devices (IPDs)

MIP713

Silicon MOS IC

■ Features

Unit : mm

• Five protective functions (over-current, over-voltage, short-circuit

load, over heat, ESD) built-in.

• Heat which goes up when load short-circuits is controlled.

• Although it is a small package, it has resistance of low heat. (When

mounted in a substrate.)

+0.20

–0.05

1.9 0.1

(0.95) (0.95)

2.90

+0.10

–0.06

0.16

• Driving directly from CMOS (microcomputer) is possible.

+0.10

–0.05

■ Applications

• For automotive electric equipment

0.30

0.50

+0.10

–0.05

10˚

■ Absolute Maximum Ratings

1 : Drain

2 : Drain

3 : Source

4 : In

5 : Drain

6 : Drain

Parameter

Drain-source voltage

Output peak current

Output current

Symbol

V_DS

I_OP

Rating

Unit

− 0.5 to +40

3.0

I_O

1.0

Mini6-G1 Package

Input voltage

V_IN

I_IN

− 0.5 to +6.0

Marking Symbol: MA

Input current

°C

Drain clamp energy ^*

E_CLP

P_D1

P_D2

T_ch

Power dissipation 1 ^*

Power dissipation 2 ^*

Channel temperature

Storage temperature

0.2

0.8

−40 to +150

−55 to +150

T_stg

Note) 1 : L = 10 mH, I = 1.84 A, V_DD= 20 V 1 pulse, T_C= 25°C

2 : Single unit

3 : Mounting on the PCB (40 mm², Thick 1.7 mm Glass epoxy substrate)

(T_a= 25°C)

■ Block Diagram

Drain

Over Current

Protection

Short Circuit

Load Protection

Gate Shut Down

Circuit

Over Voltage

Protection

ESD

Protection

Over Heat

Protection

Source

Publication date: July 2003

SLB00064AED

MIP713

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

R_DS(on)

V_DS(on)

V_DS(CLP)

I_DS(off)1

I_DS(off)2

I_DS(off)3

V_IN(H)

Conditions

V_IN= 5 V, I_DS= 1 A

Min

Typ

0.55

Max

0.8

Unit

Ω

Drain-source ON resistance

Drain-source voltage

V_IN= 5 V, I_DS= 1 A

V_IN= 0 V, I_DS= 3 mA

V_IN= 0 V, V_DS= 12 V

V_IN= 0 V, V_DS= 16 V

V_IN= 0 V, V_DS= 30 V

I_DS= 1 A

Drain clamp voltage

Drain-source cutoff current 1

Drain-source cutoff current 2

Drain-source cutoff current 3

Input voltage high-level

µA

170

Input voltage low-level

V_IN(L)

I_DS= 1 mA

0.8

0.3

0.9

Input current (normal)

I_IN(on)

V_IN= 5 V, V_DS= 0 V

V_IN= 5 V

0.2

0.6

3.0

4.0

6.0

Input current (act on protection) ^*

Over current protection limit

Short circuit load protection limit

Input voltage of act on protection

I_IN(PROT)

I_OCP

V_DS(SHT)

V_IN(PROT)

V_IN= 5 V

2.0

3.9

V_IN= 5 V

Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate.

2. When drain voltage exceeds the "Drain clamp voltage" output MOS turn on, so drain voltage are clamped before the

drain-source junction become breakdown.

3. : State of short circuit laod protection and over heat protection (Designed guarantee).

■ Electrical Characteristics (Reference value: Non guarantee value)

Parameter

Over heat protection temperature

Turn-on time

Symbol

T_SHD

t_ON

Conditions

Min

Typ

190

Max

Unit

°C

V_IN= 5 V

150

µs

V_DD= 30 V, R_L= 30 Ω

I_DS= 1 A, V_IN= 5 V

Turn-off time

t_OFF

Note) If the chip temperature exceeds the "Over heat protection temperature", output current is shut down. And if the chip cool

down, the protection will operate automatically again.

■ Electrical Characteristics T_C= −40°C to 125°C

Parameter

Symbol

R_DS(on)

V_DS(on)

V_DS(CLP)

I_DS(off)1

I_DS(off)2

I_DS(off)3

V_IN(H)

Conditions

V_IN= 5 V, I_DS= 1 A

Min

Typ

Max

1.6

Unit

Ω

Drain-source ON resistance

Drain-source voltage

V_IN= 5 V, I_DS= 1 A

V_IN= 0 V, I_DS= 3 mA

V_IN= 0 V, V_DS= 12 V

V_IN= 0 V, V_DS= 16 V

V_IN= 0 V, V_DS= 30 V

I_DS= 1 A

1.6

Drain clamp voltage

Drain-source cutoff current 1

Drain-source cutoff current 2

Drain-source cutoff current 3

Input voltage high-level

100

136

340

µA

4.3

Input voltage low-level

V_IN(L)

I_DS= 1 mA

0.8

0.45

1.2

Input current (normal)

I_IN(on)

V_IN= 5 V, V_DS= 0 V

V_IN= 5 V

Input current (act on protection)

Over current protection limit

Short circuit load protection limit

Input voltage of act on protection

I_IN(PROT)

I_OCP

V_DS(SHT)

V_IN(PROT)

V_IN= 5 V

1.15

1.6

V_IN= 5 V

4.0

6.0

SLB00064AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

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