MA150 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA150 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits
Unit : mm
φ 0.56 max.
I Features
•
•
Short reverse recovery time trr
Small terminal capacitance, Ct
1
COLORED BAND
INDICATES
CATHODE
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VR
Rating
35
Unit
V
1st Band
2nd Band
Reverse voltage MA2B150
(DC)
MA2B161
MA2B162
MA2B162A
50
75
120
35
Repetitive peak MA2B150
VRRM
V
reverse voltage
MA2B161
MA2B162
MA2B162A
50
75
2
120
100
225
500
1 : Cathode
2 : Anode
JEDEC : DO-35
φ 1.95 max.
Average forward current
IF(AV)
IFRM
IFSM
mA
mA
mA
Repetitive peak forward current
Non-repetitive peak forward
surge current*
Junction temperature
Storage temperature
Tj
200
°C
°C
Tstg
−55 to +150
Note)
* : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
IR
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
MA2B150
MA2B161
MA2B162
MA2B162A
VR = 15 V
VR = 30 V
VR = 15 V
VR = 50 V
VR = 20 V
VR = 75 V
VR = 20 V
0.025
0.1
µA
0.025
5
0.012 0.025
5
0.012 0.025
VR = 120 V
5
MA2B150
MA2B161
MA2B162
MA2B162A
VR = 35 V, Ta = 150°C
VR = 50 V, Ta = 150°C
VR = 75 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 100 mA
100
100
50
50
100
100
1.2
Forward voltage (DC)
VF
VR
Ct
0.95
V
V
Reverse voltage (DC) MA2B150
Terminal capacitance
IR = 5 µA
VR = 0 V, f = 1 MHz
35
0.9
2
10
4
pF
Reverse recovery time* MA2B150
trr
IF = 10 mA, VR = 1 V, RL = 100 Ω
ns
MA2B161/162/162A
Measure when Irr = 0.1 · IR
2.2
Note) 1. Rated input/output frequency:
100 MHz
I Cathode Indication
Type No.
Color 1st Band
2nd Band
MA2B150 MA2B161 MA2B162 MA2B162A
2. * : trr measuring circuit
White
Green
Violet
Black
Black
1
MA2B150, MA2B161, MA2B162, MA2B162A
Switching Diodes
IF VF
3
2
10
10
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
10
1
A
90%
VR
Irr = 0.1 · IR
Ta = 150°C
75°C
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
RL = 100 Ω
25°C
−1
− 20°C
10
10
trr measuring circuit
−2
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
V
Forward voltage VF
IR VR
IR VR
VF Ta
2
2
10
10
1.0
0.8
0.6
0.4
0.2
0
MA2B161
MA2B162
MA2B162A
MA2B150
Ta = 150°C
Ta = 150°C
10
1
10
1
100°C
100°C
IF = 20 mA
10 mA
1 mA
−1
−1
10
10
25°C
25°C
−2
−2
10
10
0.1 mA
0.01 mA
−3
−3
10
10
0
10
20
30
40
0
20
40
60
80
100
−40
0
40
80
120 160 200
(
)
( )
Reverse voltage VR V
Reverse voltage VR
V
(
)
Ambient temperature Ta °C
IR Ta
IR Ta
MA2B161 VR = 120 V
Ct VR
2
2
2.0
1.6
1.2
0.8
0.4
0
10
10
MA2B150
15 V
MA2B162
f = 1 MHz
Ta = 25°C
75 V
50 V
20 V
MA2B162A
VR = 35 V
10
1
10
MA2B150
1
MA2B161, MA2B162, MA2B162A
−1
−1
10
10
−2
−2
−3
10
10
10
−3
10
0
4
8
12
16
20
0
40
80
120
160
(
200
0
40
80
120
160
200
(
)
)
Reverse voltage VR
V
Ambient temperature Ta °C
(
)
Ambient temperature Ta °C
2
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