FK6K02010L [PANASONIC]
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WSMINI6-F1-B, SC-113DA, 6 PIN;
| 型号： | FK6K02010L |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WSMINI6-F1-B, SC-113DA, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
FK6K02010L
Silicon N-channel MOS FET
Unit : mm
2.0
For switching
0.2
0.13
6
5
4
Features
Low drain-source On-state Resistance:RDS(on)typ. = 13 m（VGS = 4.5 V)
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
2
3
0.7
Marking Symbol :
Packaging
TA
(0.65)(0.65)
1.3
Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
Panasonic
JEITA
WSMini6-F1-B
SC-113DA
―
Absolute Maximum Ratings Ta = 25C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
20
10
4.5
18
700
150
Unit
V
V
A
A
mW
C
C
C
Code
Internal Connection
*1
IDp
PD
Tch
Topr
Tstg
Peak drain current
Power dissipation *2
Channel temperature
Operating ambient temperature
Storage temperature
-40 to + 85
-55 to +150
Note) *1 t = 10 μs, Duty Cycle < 1%
*2
Measuring on Glass epoxy board (25.4 25.4 t0.8 mm)
coated with copper foil, which has more than 300 mm2
Absolute maximum rating without heat sink for PD is 150 mW.
Pin Name
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
Page 1 of 6
Established : 2010-06-07
Revised : 2013-07-01
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
Electrical Characteristics Ta = 25C 3C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Symbol
VDSS ID = 1 mA, VGS = 0
Conditions
Min Typ Max
20
Unit
V
μA
μA
V
IDSS
IGSS
Vth
RDS(ON)1
RDS(ON)2
|Yfs|
VDS = 20 V, VGS = 0
VGS = 8 V, VDS = 0
ID = 1.0 mA, VDS = 10.0 V
ID = 2.0 A, VGS = 4.5 V
ID = 1.0 A, VGS = 2.5 V
ID = 1.0 A, VDS =10 V
1.0
10
0.4 0.85 1.3
13
16
17.5
28
Drain-source ON resistance
m
Forward transfer admittance
3.0
S
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1 730
155
150
19
30
150
75
pF
pF
pF
ns
ns
ns
ns
VDS = 10 V, VGS = 0, f = 1 MHz
Turn-on delay time *1
VDD = 10 V
VGS = 0 to 4 V
ID=1.0A
Rise time *1
Turn-off delay time *1
Fall time *1
Note)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Established : 2010-06-07
Revised : 2013-07-01
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
*1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
VDD = 10 V
ID = 1.0 A
RL = 10
Vin
4 V
0 V
PW = 10 μs
D.C. ≦ 1 %
Vout
D
G
Vin
50
S
90%
Vin
10
90%
Vout
10%
tr
td(off) tf
td(on)
Page 3 of 6
Established : 2010-06-07
Revised : 2013-07-01
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
Technical Data ( reference )
ID - VDS
ID - VGS
4
4.5 V
2.5 V
4
3
2
1
0
Ta = 85 ℃
25 ℃
2.0 V
3
VGS = 1.5 V
2
1
0
- 40 ℃
0
0.5
1
1.5
2
0
0.1
0.2
0.3
Gate-source voltage VGS (V)
Drain-source voltage VDS (V)
VDS - VGS
RDS(on) - ID
0.3
0.2
0.1
0
100
10
1
VGS = 2.5 V
4.0 V
ID = 4.0 A
2.0 A
1.0 A
1
0.01
0.1
1
10
0
2
3
4
5
6
Drain current ID (A)
Gate-source voltage VGS (V)
Capacitance - VDS
10000
1000
100
10
Ciss
Coss
Crss
1
0.1
1
10
100
Drain-source voltage VDS (V)
Page 4 of 6
Established : 2010-06-07
Revised : 2013-07-01
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
Technical Data ( reference )
Vth - Ta
RDS(on) - Ta
1.5
1
30
25
20
15
10
5
VGS = 2.5 V
4.5 V
0.5
0
0
-50
0
50
100
150
-50
0
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
1.4
1.2
1
Mounted on glass-epoxy board
(25.4 x 25.4 x t0.8 mm)
0.8
0.6
0.4
0.2
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
Safe Operating Area
100
10
1000
100
10
IDp = 18 A
1
1ms
10ms
100ms
0.1
Operation in this area
is limited by RDS(on)
1s
1
0.01
Ta = 25℃,Glass epoxy board coated with
copper foil, which has more than 300mm2.
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width tsw (s)
Drain-source voltage VDS (V)
Page 5 of 6
Established : 2010-06-07
Revised : 2013-07-01
Doc No. TT4-EA-12566
Revision. 2
MOS FET
FK6K02010L
WSMini6-F1-B
Unit: mm
2.0±0.1
0.13+-0.053
0.20+-0.052
6
5
4
1
2
3
(0.65) (0.65)
1.3±0.1
(5°)
Land Pattern (Reference) (Unit : mm)
0.65 0.65
0.45
Page 6 of 6
Established : 2010-06-07
Revised : 2013-07-01
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
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