FJ3P02100L [PANASONIC]
Power CSP MOSFETâs;New
Product
Introduction
NEW! FJ3P02100L & FK3P02110L Series
Power CSP MOSFET’s
With Panasonic’s Advanced 110nm Fine Trench Cell Silicon Technology
Panasonic,ꢀaꢀworldwideꢀleaderꢀinꢀSemiconductorꢀProducts,ꢀisꢀpleasedꢀtoꢀannounceꢀtheꢀNEW FJ3P02100L and
FK3P02110L SeriesꢀofꢀPowerꢀCSPꢀMOSFET’s.ꢀTheꢀNEW POWER CSP MOSFET SeriesꢀfeaturesꢀPowerꢀMountꢀ
CSPꢀPackagingꢀ(PMCP)ꢀthatꢀisꢀcomprisedꢀofꢀaꢀuniqueꢀpadꢀdesignꢀandꢀdrainꢀclipꢀtechnology.ꢀꢀThisꢀallowsꢀforꢀaꢀ5%ꢀ
improvementꢀinꢀthermalꢀdissipationꢀwhileꢀsimultaneouslyꢀreducingꢀtheꢀsizeꢀbyꢀ80%ꢀoverꢀtheꢀconventionalꢀsolutions.ꢀ
Panasonic’sꢀadvancesꢀinꢀcellꢀtechnologyꢀandꢀwaferꢀthinningꢀfabricationꢀhaveꢀleadꢀtoꢀsiliconꢀwithꢀaꢀ110nmꢀfineꢀ
trenchꢀcellꢀthatꢀprovidesꢀ47%ꢀlowerꢀRDS(on)ꢀoverꢀtheꢀsameꢀsizedꢀconventionalꢀchip.ꢀByꢀusingꢀthisꢀtechnology,
thisꢀMOSFETꢀSeriesꢀachievesꢀhigherꢀpowerꢀefficiencyꢀwhileꢀreducingꢀpowerꢀconsumption.
Features:
Applications:ꢀꢀꢀꢀꢀ
•ꢀPortableꢀAudioꢀPlayer/ꢀGamingꢀDevice/ꢀ
HandꢀSet/ꢀICꢀRecorder
•ꢀBloodꢀGlucoseꢀMonitor/ꢀHearingꢀAid
•ꢀICꢀCard
•ꢀPowerꢀMountꢀCSPꢀ(PMCP)ꢀPackageꢀAllowsꢀ
ForꢀImprovedꢀThermalꢀDissipationꢀByꢀ5%ꢀ
WhileꢀReducingꢀTheꢀSizeꢀByꢀ80%ꢀOverꢀtheꢀ
ConventionalꢀSolutions
•ꢀEmployingꢀaꢀFineꢀTrenchꢀSiliconꢀTechnologyꢀThatꢀ
Providesꢀ47%ꢀlowerꢀRDS(on)ꢀOverꢀTheꢀSameꢀSized
ConventionalꢀChip.ꢀByꢀUsingꢀThisꢀTechnology,ꢀ
thisꢀMOSFETꢀFamilyꢀAchievesꢀHigherꢀPowerꢀEfficiencyꢀ
WhileꢀReducingꢀPowerꢀConsumptionꢀofꢀtheꢀSystem
•ꢀSize:ꢀꢀFJ3P02100L:ꢀ2.0ꢀxꢀ2.0ꢀxꢀ0.33mmꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀFK3P02110L:ꢀ1.8ꢀxꢀ1.6ꢀxꢀ0.33mm
•ꢀRDS(on):ꢀꢀꢀꢀFJ3P02100L:ꢀ9.5mΩ@VGS=4.5V(typ.)ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀFK3P02110L:ꢀ12.5mΩ@VGS=2.5V(typ.)
•ꢀLead-freeꢀSolderꢀBumps,ꢀHalogenꢀFree,ꢀ
RoHSꢀQualified
•ꢀMeter
•ꢀAdapter
•ꢀSmartꢀPhone/ꢀTabletꢀPC/ꢀE-Book
•ꢀSever/Rooter
Part Number Information:
1
2
3
4
5
6
7
8
9
10
F J 3 P 0 2 1 0 0
Product Code
J
K
L
PMCP
Taping
Pch
Nch
Product Number
Specification
•ꢀAEC-Q101ꢀQualified
0210
0211
Type
MOSFET
Code
F
Benefits:
•ꢀHighꢀPowerꢀDensityꢀandꢀBetterꢀEfficiencyꢀ
MinimizeꢀBoardꢀSpaceꢀWhileꢀIncreasingꢀ
EfficiencyꢀandꢀThermalꢀDissipation
Additional Information:
•ꢀLowerꢀPowerꢀConsumption
Forꢀdetailedꢀspecificationꢀ
informationꢀonꢀtheseꢀ
PowerꢀCSPꢀMOSFETꢀ
Semiconductors,ꢀ
IndustryꢀLeadingꢀLowꢀRDS(on)ꢀforꢀLoadꢀSwitch
•ꢀDampenꢀExcessiveꢀRingingꢀandꢀOvershoot
TheꢀClipꢀStructureꢀRatherꢀThanꢀWire-Bondsꢀisꢀ
MoreꢀEffectiveꢀtoꢀReduceꢀtheꢀParasiticꢀInductanceꢀ
visit:ꢀpanasonic.com/
industrial/includes/zip/
PCMP_MOSFET_ꢀ
Industries:ꢀꢀꢀꢀꢀꢀ
•ꢀPortableꢀApplication
•ꢀMedical
ꢀDataSheet.zipꢀtoday!
•ꢀHealthꢀCare
•ꢀMobile
•ꢀComputing
•ꢀConsumer
Website: panasonic.com/industrial/semiconductors
Copyright © 2013 Panasonic Corporation of North America.
All Rights Reserved. Specifications are subject to change without notice.
PMCP MOSFET NPI, FY12-132-XXX
Website: www.panasonic.com/industrial
industrial@us.panasonic.com
1-800-344-2112
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FJ6K0101_1591432_files/FJ6K0101_1591432_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FJ6K0101_1591432_files/FJ6K0101_1591432_2.jpg)
FJ6K0101
Power Field-Effect Transistor, 4A I(D), 12V, 0.003ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, WSMINI6-F1-B, 6 PIN
PANASONIC
![](http://pdffile.icpdf.com/pdf2/p00252/img/page/FJ6K01010L_1524976_files/FJ6K01010L_1524976_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00252/img/page/FJ6K01010L_1524976_files/FJ6K01010L_1524976_2.jpg)
FJ6K01010L
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WSMINI6-F1-B, SC-113DA, 6 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明