DZ2S051M0L

更新时间:2024-09-18 18:10:47
品牌:PANASONIC
描述:Zener Diode, 5.1V V(Z), 2.53%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN

DZ2S051M0L 概述

Zener Diode, 5.1V V(Z), 2.53%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN 齐纳二极管 齐纳二极管

DZ2S051M0L 规格参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SC-79, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:3.73配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:60 ΩJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.15 W标称参考电压:5.1 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.53%工作测试电流:5 mA
Base Number Matches:1

DZ2S051M0L 数据手册

通过下载DZ2S051M0L数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Doc No. TT4-EA-11779  
Revision. 3  
Zener Diode  
DZ2S0510L  
DZ2S0510L  
Silicon epitaxial planar type  
Unit: mm  
For constant voltage / For surge absorption circuit  
DZ2J051 in SSMini2 type package  
0.8  
0.13  
2
Features  
Excellent rising characteristics of zener current Iz  
Low zener operating resistance Rz  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
Marking Symbol:  
Packaging  
CJ or CU  
0.3  
0.6  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Cathode  
2. Anode  
Absolute Maximum Ratings Ta = 25 C  
Panasonic  
JEITA  
SSMini2-F5-B  
SC-79  
SOD-523  
Parameter  
Symbol  
IFRM  
PT  
Rating  
200  
150  
15  
150  
Unit  
mA  
mW  
kV  
C  
C  
Repetitive peak forward current  
Code  
*1  
Total power dissipation  
Electrostatic discharge  
*2  
ESD  
Tj  
Topr  
Tstg  
Junction temperature  
Operating ambient temperature  
Storage temperature  
Internal Connection  
-40 to +85  
-55 to +150  
2
C  
Note)  
*1  
Mounted on glass epoxy print board ( 45 mm 45 mm 1 mm )  
Solder in ( 0.8 mm 0.6 mm )  
*2 Test method : IEC61000_4_2  
( C = 150 pF, R = 330 , Contact discharge : 10 times )  
1
Electrical Characteristics Ta = 25 C 3 C  
Parameter Symbol  
Conditions  
Min Typ Max  
1.0  
Unit  
V
V
Forward voltage  
Zener voltage *1, *2  
VF  
VZ  
IF = 10 mA  
IZ = 5 mA  
IZ = 5 mA  
IZ = 1 mA  
VR = 2 V  
IZ = 5 mA  
4.85  
5.36  
60  
Zener operating resistance  
Zener rise operating resistance  
Reverse current  
RZ  
RZK  
IR  
500  
1.0  
A  
mV/C  
*3  
SZ  
0.7  
Temperature coefficient of zener voltage  
Note) 1.  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.  
2.  
Absolute frequency of input and output is 5 MHz.  
3. *1  
The temperature must be controlled 25 C for VZ mesurement.  
VZ value measured at other temperature must be adjusted to VZ (25 C).  
*2  
*3  
VZ guaranted 20 ms after current flow  
Rank classification  
Tj = 25 C to 150 C  
Code  
Rank  
M
M
0
No-rank  
VZ  
5.00 to 5.26 4.85 to 5.36  
Marking symbol  
CU  
CJ  
Page 1 of 4  
Established : 2009-11-09  
Revised : 2013-07-22  
Doc No. TT4-EA-11779  
Revision. 3  
Zener Diode  
DZ2S0510L  
Technical Data ( reference )  
PT - Ta  
IF - VF  
200  
150  
100  
50  
1.E+00  
Mounted on glass epoxy print board.  
Board size : 45 mm × 45 mm x 1 mm  
Solder in : 0.8 mm x 0.6 mm  
Ta = 25 °C  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
20 40 60 80 100 120 140 160 180 200  
Ambient temperature Ta (°C)  
Forward voltage VF (V)  
IR - VR  
IZ - VZ  
1.E-06  
1.E-07  
1.E-08  
1.E-09  
1.E-10  
1.E-11  
1.E-12  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
Ta = 25 °C  
Ta = 125 °C  
85 °C  
25 °C  
-40 °C  
0
2
4
6
8
10  
0
0.5  
1
1.5  
2
Zener voltage VZ (V)  
Reverse voltage VR (V)  
SZ - IZ  
RZ - IZ  
5
3
1000  
100  
10  
Ta = 25 °C  
1
-1  
-3  
-5  
1
0.1  
0.0001  
0.001  
0.01  
0.1  
0
2
4
6
8
10  
Zener current IZ (A)  
Zener current IZ (mA)  
Page 2 of 4  
Established : 2009-11-09  
Revised : 2013-07-22  
Doc No. TT4-EA-11779  
Revision. 3  
Zener Diode  
DZ2S0510L  
Technical Data ( reference )  
Rth - t  
Ct - VR  
1000  
80  
70  
60  
50  
40  
30  
20  
10  
0
(1)  
Ta = 25 °C  
f = 1 MHz  
Rth(j-l) = 80 °C/W  
(2)  
100  
10  
1
(1) Non-heat sink  
(2) Mounted on glass epoxy print board.  
Board size : 45 mm × 45 mm x 1 mm  
Solder in : 0.8 mm x 0.6 mm  
0.001 0.01  
0.1  
1
10  
100  
1000  
0
1
2
3
4
Time t (s)  
Reverse voltage VR (V)  
PZSM - tw  
100  
10  
1
Ta = 25 °C  
0.1  
100  
1000  
10000  
Pulse width tw (μs)  
Page 3 of 4  
Established : 2009-11-09  
Revised : 2013-07-22  
Doc No. TT4-EA-11779  
Revision. 3  
Zener Diode  
DZ2S0510L  
SSMini2-F5-B  
Unit: mm  
0.80+-0.053  
0.13+-0.052  
2
1
0.30±0.05  
0 to 0.05  
(5°)  
Land Pattern (Reference) (Unit: mm)  
0.8  
Page 4 of 4  
Established : 2009-11-09  
Revised : 2013-07-22  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

DZ2S051M0L CAD模型

  • 引脚图

  • 封装焊盘图

  • DZ2S051M0L 相关器件

    型号 制造商 描述 价格 文档
    DZ2S056 PANASONIC Zener Diode, 5.6V V(Z), 5%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, SSMINI2-F5-B, 2 PIN 获取价格
    DZ2S05600L PANASONIC Zener Diode, 5.6V V(Z), 5%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN 获取价格
    DZ2S056M PANASONIC Zener Diode, 5.6V V(Z), 2.49%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, SSMINI2-F5-B, 2 PIN 获取价格
    DZ2S056M0L PANASONIC Silicon epitaxial planar type For constant voltage For surge absorption circuit DZ2J056 in SSMimi2 type package 获取价格
    DZ2S062 PANASONIC Zener Diode, 6.2V V(Z), 5%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, SSMINI2-F5-B, 2 PIN 获取价格
    DZ2S06200L PANASONIC Silicon epitaxial planar type For constant voltage / For surge absorption circuit DZ2J062 in SSMini2 type package 获取价格
    DZ2S068 PANASONIC Zener Diode, 6.8V V(Z), 5%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, SSMINI2-F5-B, 2 PIN 获取价格
    DZ2S06800L PANASONIC Zener Diode, 6.8V V(Z), 5%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN 获取价格
    DZ2S068C PANASONIC Zener Diode, 7V V(Z), 7.14%, 0.15W, Silicon, Bidirectional, ROHS COMPLIANT, SSMINI2-F5-B, 2 PIN 获取价格
    DZ2S068C0L PANASONIC Zener Diode, 6.8V V(Z), 7.14%, 0.15W, Silicon, Bidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN 获取价格

    DZ2S051M0L 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6