DZ2S051M0L
更新时间:2024-09-18 18:10:47
品牌:PANASONIC
描述:Zener Diode, 5.1V V(Z), 2.53%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN
DZ2S051M0L 概述
Zener Diode, 5.1V V(Z), 2.53%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI2-F5-B, SC-79, 2 PIN 齐纳二极管 齐纳二极管
DZ2S051M0L 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SC-79, 2 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 3.73 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
最大动态阻抗: | 60 Ω | JESD-30 代码: | R-PDSO-F2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.15 W | 标称参考电压: | 5.1 V |
子类别: | Voltage Reference Diodes | 表面贴装: | YES |
技术: | ZENER | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 2.53% | 工作测试电流: | 5 mA |
Base Number Matches: | 1 |
DZ2S051M0L 数据手册
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PDF下载Doc No. TT4-EA-11779
Revision. 3
Zener Diode
DZ2S0510L
DZ2S0510L
Silicon epitaxial planar type
Unit: mm
For constant voltage / For surge absorption circuit
DZ2J051 in SSMini2 type package
0.8
0.13
2
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
Marking Symbol:
Packaging
CJ or CU
0.3
0.6
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Absolute Maximum Ratings Ta = 25 C
Panasonic
JEITA
SSMini2-F5-B
SC-79
SOD-523
Parameter
Symbol
IFRM
PT
Rating
200
150
15
150
Unit
mA
mW
kV
C
C
Repetitive peak forward current
Code
*1
Total power dissipation
Electrostatic discharge
*2
ESD
Tj
Topr
Tstg
Junction temperature
Operating ambient temperature
Storage temperature
Internal Connection
-40 to +85
-55 to +150
2
C
Note)
*1
Mounted on glass epoxy print board ( 45 mm 45 mm 1 mm )
Solder in ( 0.8 mm 0.6 mm )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330 , Contact discharge : 10 times )
1
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol
Conditions
Min Typ Max
1.0
Unit
V
V
Forward voltage
Zener voltage *1, *2
VF
VZ
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 1 mA
VR = 2 V
IZ = 5 mA
4.85
5.36
60
Zener operating resistance
Zener rise operating resistance
Reverse current
RZ
RZK
IR
500
1.0
A
mV/C
*3
SZ
0.7
Temperature coefficient of zener voltage
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2.
Absolute frequency of input and output is 5 MHz.
3. *1
The temperature must be controlled 25 C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 C).
*2
*3
VZ guaranted 20 ms after current flow
Rank classification
Tj = 25 C to 150 C
Code
Rank
M
M
0
No-rank
VZ
5.00 to 5.26 4.85 to 5.36
Marking symbol
CU
CJ
Page 1 of 4
Established : 2009-11-09
Revised : 2013-07-22
Doc No. TT4-EA-11779
Revision. 3
Zener Diode
DZ2S0510L
Technical Data ( reference )
PT - Ta
IF - VF
200
150
100
50
1.E+00
Mounted on glass epoxy print board.
Board size : 45 mm × 45 mm x 1 mm
Solder in : 0.8 mm x 0.6 mm
Ta = 25 °C
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (°C)
Forward voltage VF (V)
IR - VR
IZ - VZ
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
Ta = 25 °C
Ta = 125 °C
85 °C
25 °C
-40 °C
0
2
4
6
8
10
0
0.5
1
1.5
2
Zener voltage VZ (V)
Reverse voltage VR (V)
SZ - IZ
RZ - IZ
5
3
1000
100
10
Ta = 25 °C
1
-1
-3
-5
1
0.1
0.0001
0.001
0.01
0.1
0
2
4
6
8
10
Zener current IZ (A)
Zener current IZ (mA)
Page 2 of 4
Established : 2009-11-09
Revised : 2013-07-22
Doc No. TT4-EA-11779
Revision. 3
Zener Diode
DZ2S0510L
Technical Data ( reference )
Rth - t
Ct - VR
1000
80
70
60
50
40
30
20
10
0
(1)
Ta = 25 °C
f = 1 MHz
Rth(j-l) = 80 °C/W
(2)
100
10
1
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
Board size : 45 mm × 45 mm x 1 mm
Solder in : 0.8 mm x 0.6 mm
0.001 0.01
0.1
1
10
100
1000
0
1
2
3
4
Time t (s)
Reverse voltage VR (V)
PZSM - tw
100
10
1
Ta = 25 °C
0.1
100
1000
10000
Pulse width tw (μs)
Page 3 of 4
Established : 2009-11-09
Revised : 2013-07-22
Doc No. TT4-EA-11779
Revision. 3
Zener Diode
DZ2S0510L
SSMini2-F5-B
Unit: mm
0.80+-0.053
0.13+-0.052
2
1
0.30±0.05
0 to 0.05
(5°)
Land Pattern (Reference) (Unit: mm)
0.8
Page 4 of 4
Established : 2009-11-09
Revised : 2013-07-22
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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