DMC204C00R [PANASONIC]

Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN;


型号：	DMC204C00R
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN 放大器光电二极管晶体管
文件：	总4页 (文件大小：768K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMC204C0

Silicon NPN epitaxial planar type

Unit: mm

For low frequency ampliﬁcation

 Features

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

ꢀMarking Symbol: D5

ꢀBasic Part Number

Dual DSC2C01 (Individual)

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

Panasonic

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

Mini6-G4-B

SC-74

 Packaging

DMC204C00R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

JEITA

ꢀAbsolute Maximum Ratings T_a= 25°C

Code

SOT-457

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

100

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

(C1) (B2) (E2)

100

Tr1

Tr2

Tr1

Tr2

°C

Peak collector current

I_CP

(E1) (B1) (C2)

Total power dissipation

P_T

300

Junction temperature

T_j

150

Overall

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +150

°C

stg

°C

ꢀElectrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

100

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

V_CBOI_C= 10 µA, I_E= 0

V_CEOI_C= 1 mA, I_B= 0

V_EBOI_E= 10 µA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= 60 V, I_E= 0

V_CE= 60 V, I_B= 0

V_CE= 10 V, I_C= 2 mA

0.1

µA



400

1200

0.20

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 10 mA, I_B= 1 mA

f_TV_CE= 10 V, I_C= 2 mA

0.05

140

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: January 2014

Ver. CED

DMC204C0

P_T T

I_C V_CE

h_FE I_C

350

300

250

200

150

100

1600

1200

800

70 µA

Pulse test

80 µA

90 µA

_CE= 10 V

T_a= 25°C

60 µA

50 µA

T_a= 85°C

I_B= 100 µA

40 µA

30 µA

25°C

−40°C

20 µA

10 µA

400

10⁻¹

10²

120

160

200

(

)

Ambient temperature T_a°C

Collector-emitter voltage V_CE(V)

Collector current I_C(mA)

V_CE(sat) I_C

I_C V_BE

C_ob V_CB

_C/ I_B= 10

I_E= 0

f = 1 MHz

_CE= 10 V

25°C

T_a= 25°C

T_a= 85°C

−40°C

10⁻¹

T_a= 85°C

25°C

−40°C

10⁻²

10⁻¹

10²

0.2 0.4 0.6 0.8 1.0 1.2

100

Base-emitter voltage V_BE(V)

Collector current I_C(mA)

Collector-base voltage V_CB(V)

f_T I_C

250

200

150

100

V_CE= 10 V

T_a= 25°C

10⁻¹

10²

Collector current I_C(mA)

Ver. CED

DMC204C0

Unit: mm

Mini6-G4-B

 Land Pattern (Reference) (Unit: mm)

Ver. CED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

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Consult our sales staff in advance for information on the following applications:

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It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

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