DB2141200L [PANASONIC]
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard); 浮雕式（热压密封） ： 3 000个/卷（标准）
| 型号： | DB2141200L |
| 厂家： | 
PANASONIC |
| 描述： | Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) |
| 文件： | 总5页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Doc No. TT4-EA-13679
Revision. 3
Schottky Barrier Diode
DB2141200L
DB2141200L
Silicon epitaxial planar type
Unit: mm
1.25
0.6
0.12
For rectification
2
Features
Low forward voltage and small reverse leakage current
Forward current (Average) IF(AV) = 1.5 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
Marking Symbol:
Packaging
4S
0.8
0.55
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
SMini2-F4-B-B
SC-108A
―
Code
Absolute Maximum Ratings Ta = 25 C
Parameter
Reverse voltage
Forward current (average) *1
Symbol
VR
IF(AV)
IFSM
Tj
Rating
40
1.5
30
150
Unit
V
A
Internal Connection
2
*2
A
Non-repetitive peak forward surge current
*1
°C
°C
°C
Junction temperature
Operating ambient temperature
Storage temperature
Topr
Tstg
-40 to +85
-55 to +150
Note: *1 Tl = 80 °C
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
Page 1 of 4
Established : 2011-07-08
Revised : 2013-04-19
Doc No. TT4-EA-13679
Revision. 3
Schottky Barrier Diode
DB2141200L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Forward voltage
Symbol
Conditions
Min Typ Max
0.41 0.48
Unit
V
μA
pF
ns
VF
IR
Ct
trr
IF = 1.5 A
VR = 40 V
Reverse current
25
43
12
150
Terminal capacitance
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
Reverse recovery time *1
Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Output Pulse
Bias Application Unit (N-50BU)
tp
tr
t
10%
trr
IF
t
A
90%
VR
Irr = 10 mA
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
Pulse Generator
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
(PG-10N)
Rs = 50 Ω
Page 2 of 4
Established : 2011-07-08
Revised
: 2013-04-19
Doc No. TT4-EA-13679
Revision. 3
Schottky Barrier Diode
DB2141200L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E-02
1.E-03
1.E-04
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
Ta =125 °C
85 °C
Ta = 125 °C
85 °C
25 °C
1.E-05
25 °C
1.E-06
-40 °C
-40 °C
1.E-07
1.E-08
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
35
40
Forward voltage VF (V)
Reverse voltage VR (V)
Rth - t
Ct - VR
1000
100
10
350
300
250
200
150
100
50
(1)
(2)
Ta = 25 °C
f = 1 MHz
Rth(j-l) = 10 °C/W
(3)
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
0
1
0
5
10
15
20
25
30
35
40
0.001 0.01
0.1
1
10
100
1000
Reverse voltage VR (V)
Time t (s)
IF(AV) - Tl
PF(AV) - IF(AV)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.75
1.5
1.25
1
tp/T
DC
IF
IF
tp
tp
Sine Wave 1/2
T
T
DC
1/2
1/4
VR = 20 V
Tj = 125 °C
0.75
0.5
0.25
0
1/4
Sine Wave
0
25
50
75
100 125 150 175
0
0.5
1
1.5
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2011-07-08
Revised : 2013-04-19
Doc No. TT4-EA-13679
Revision. 3
Schottky Barrier Diode
DB2141200L
SMini2-F4-B-B
Unit: mm
1.25±0.10
0 to 0.1
0.6±0.1
2
1
0.8±0.1
0.12+-0.052
(5°)
Land Pattern (Reference) (Unit: mm)
0.8
1.1
Page 4 of 4
Established : 2011-07-08
Revised : 2013-04-19
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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