CNC1H001 [PANASONIC]
Optoisolator; OPTOISOLATOR
| 型号： | CNC1H001 |
| 厂家： | 
PANASONIC |
| 描述： | Optoisolator |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Optoisolators (Photocouplers)
CNC1H001
Optoisolator
Unit: mm
I Features
• Housed in a surface mount package alternative to mini-flat package
of 1.27 mm pitch
10.3 0.3
16
9
• Double molded package
• 2.5 kV isolation voltage
• UL approved (File No. E79920)
1
8
I Applications
(1.3)
1.27
0.4
• Suited for interface circuits requiring high density mounting of
parts, especially hybrid ICs and programmable controllers
• Signal transfer between circuits with different potentials and with
impedances
0.5 0.3
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
PCTFG116-001 Package
: Anode
: Cathode
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
V
Input (light
Reverse voltage (DC)
VR
IF
6
50
Pin Connection
emitting diode) Forward current (DC)
Pulse forward current *
mA
A
1
IFP
1
2
Power dissipation *
PD
75
mW/ch
mA
V
16
15 14
13 12
11 10
9
Output (photo Collector current
IC
50
transistor)
Collector-emitter voltage
VCEO
VECO
PC
80
Emitter-collector voltage
7
V
3
Collector power dissipation *
4
120
2500
mW/ch
V[rms]
°C
1
2
3
4
5
6
7
8
Isolation voltage, input to output *
Operating ambient temperature
Storage temperature
VISO
Top View
Topr −30 to +100
Tstg −55 to +125
°C
Note) 1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs
*
2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C.
3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C.
4: AC voltage (t = 1.0 min., RH < 60%)
*
*
*
Publication date: May 2002
SHF00006AED
1
CNC1H001
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
1.5
10
Unit
V
Input
diode
Forward voltage
Reverse current
Capacitance
VF
IR
IF = 50 mA
VR = 3 V
1.35
µA
pF
nA
V
Ct
VR = 0 V, f = 1 MHz
VCE = 20 V
15
5
Output
Collector-emitter dark current ICEO
100
transistor Collector-emitter voltage
Emitter-collector voltage
Collector capacitance
VCEO IC = 100 µA
VECO IE = 10 µA
80
7
V
CC
VCE = 10 V, f = 1 MHz
10
pF
%
1
Coupled Current transfer ratio *
CTR VCE = 5 V, IF = 5 mA
100
600
Capacitance
Resistance
CISO
RISO
tr
f = 1 MHz
0.6
pF
Ω
VISO = 500 V
VCC = 10 V, IC = 2 mA
RL = 100 Ω
1011
2
Rise time *
4
3
µs
3
Fall time *
tf
Saturation voltage
VCE(sat) IF = 20 mA, IC = 1 mA
0.1
0.2
V
Note) 1: CTR = IC / IF × 100%
*
2: Rise time is defined as the time required for the IC to rise from 10% to 90% of peak value.
3: Fall time is defined as the time required for the IC to decrease from 90% to 10% of peak value.
*
*
Input and output are practiced by electricity.
The device is designed be disregarded radiation.
PC , PD Ta
IF VF
IC IF
60
102
10
160
VCC = 5 V
Ta = 25°C
Ta = 25°C
PC
50
40
30
20
10
0
120
80
40
0
1
PD
10−1
10−2
10−1
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
102
−20
0
20 40 60 80 100 120
Forward voltage VF (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
SHF00006AED
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CNC1H001
IC VCE
∆IC Ta
ICEO Ta
104
103
102
10
180
140
100
60
50
40
30
20
10
0
IF = 30 mA
25 mA
VCE = 20 V
20 mA
15 mA
10 mA
1
5 mA
10−1
2 mA
1 mA
10−2
20
−20
−40 −20
0
20 40 60 80 100
0
20
40
60
80
100
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
tr IC
tf IC
Frequency characteristics
102
10
102
10
102
10
Ta = 25°C
VCC = 10 V
Ta = 25°C
VCC = 10 V
Ta = 25°C
RL = 1 kΩ
500 Ω
RL = 1 kΩ
500 Ω
100 Ω
100 Ω
1
1
1
Sig. in VCC
Sig. in VCC
10−1
10−1
10−1
V1
V1
V2
90%
10%
90%
10%
V1
V2
V1
50 Ω
V2
RL
V2
td
td
50 Ω
RL
tr
tf
tr
10
tf
10−2
10−2
10−1
10−2
10−1
102
1
10
102
103
1
102
1
10
Frequency f (kHz)
Collector current IC (mA)
Collector current IC (mA)
SHF00006AED
3
Caution for Safety
IGallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when
disposing of the products. Do not mix them with ordi-
nary industrial waste or household refuse when dis-
posing of GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without no-
tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY
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